Enhancement of localized resonance through non-centrosymmetric trumpet hole arrays in Ag/Si and Ag/SiO<inf>2</inf>/Ag structure

AbstractOptoelectronic devices in the UV range have many applications including deep-UV communications, UV photodetectors, UV spectroscopy, etc. Graphene has unique exciton resonances, that have demonstrated large photosensitivity across the UV spectrum. Enhancing UV absorption in graphene has the potential to boost the performance of the various opto-electronic devices. Here we report numerical study of UV absorption in graphene on aluminum and magnesium hole-arrays. The absorption in a single-layer graphene on aluminum and magnesium hole-arrays reached a maximum value of 28% and 30% respectively, and the absorption peak is tunable from the UV to the visible range. The proposed graphene hybrid structure does not require graphene to be sandwiched between different material layers and thus is easy to fabricate and allows graphene to interact with its surroundings.

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Perfect Absorption and Refractive-Index Sensing by Metasurfaces Composed of Cross-Shaped Hole Arrays in Metal Substrate

Nanomaterials ◽

10.3390/nano11010063 ◽

2020 ◽

Vol 11 (1) ◽

pp. 63

Author(s):

Zhendong Yan ◽

Chaojun Tang ◽

Guohua Wu ◽

Yumei Tang ◽

Ping Gu ◽

...

Keyword(s):

Refractive Index ◽

High Performance ◽

Narrow Band ◽

Label Free ◽

Hybrid Mode ◽

Perfect Absorption ◽

Refractive Index Sensing ◽

Sensing Applications ◽

Silver Substrate ◽

Hole Arrays

Achieving perfect electromagnetic wave absorption with a sub-nanometer bandwidth is challenging, which, however, is desired for high-performance refractive-index sensing. In this work, we theoretically study metasurfaces for sensing applications based on an ultra-narrow band perfect absorption in the infrared region, whose full width at half maximum (FWHM) is only 1.74 nm. The studied metasurfaces are composed of a periodic array of cross-shaped holes in a silver substrate. The ultra-narrow band perfect absorption is related to a hybrid mode, whose physical mechanism is revealed by using a coupling model of two oscillators. The hybrid mode results from the strong coupling between the magnetic resonances in individual cross-shaped holes and the surface plasmon polaritons on the top surface of the silver substrate. Two conventional parameters, sensitivity (S) and figure of merit (FOM), are used to estimate the sensing performance, which are 1317 nm/RIU and 756, respectively. Such high-performance parameters suggest great potential for the application of label-free biosensing.

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A Compact Optical Switch via Plasmonics of Subwavelength Circular-Sharp Hole Arrays in Metal Films

Annalen der Physik ◽

10.1002/andp.201700299 ◽

2017 ◽

Vol 530 (3) ◽

pp. 1700299 ◽

Cited By ~ 5

Author(s):

Taiming Sun ◽

Zhixiang Deng ◽

Jiabing Sheng ◽

Zhiyong Chen ◽

Weihua Zhu ◽

...

Keyword(s):

Optical Switch ◽

Metal Films ◽

Hole Arrays

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Surface-plasmon lasing in hexagonal hole arrays

2017 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) ◽

10.1109/cleoe-eqec.2017.8087643 ◽

2017 ◽

Author(s):

V.T. Tenner ◽

M.J.A. de Dood ◽

M.P. van Exter

Keyword(s):

Surface Plasmon ◽

Hexagonal Hole ◽

Hole Arrays

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Formation of Si Nano Hole Arrays Using a Self-assembled Nanolithography Mask and Cu Fill of the Array

Journal of The Surface Finishing Society of Japan ◽

10.4139/sfj.64.659 ◽

2013 ◽

Vol 64 (12) ◽

pp. 659-661

Author(s):

Eiichi KONDOH ◽

Kakeru TAMAI ◽

Michio MATSUMURA

Keyword(s):

Self Assembled ◽

Hole Arrays

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A Thermopile Device with Sub-Wavelength Hole Arrays by CMOS-MEMS Technology

Sensors ◽

10.3390/s21010180 ◽

2020 ◽

Vol 21 (1) ◽

pp. 180

Author(s):

Chi-Feng Chen ◽

Chih-Hsiung Shen ◽

Yun-Ying Yeh

Keyword(s):

Fdtd Method ◽

Elliptical Hole ◽

Oxide Semiconductor ◽

Active Area ◽

Hole Array ◽

Cmos Mems ◽

Simulation Results ◽

Hole Arrays ◽

Hole Structure ◽

Sub Wavelength

A thermopile device with sub-wavelength hole array (SHA) is numerically and experimentally investigated. The infrared absorbance (IRA) effect of SHAs in active area of the thermopile device is clearly analyzed by the finite-difference time-domain (FDTD) method. The prototypes are manufactured by the 0.35 μm 2P4M complementary metal-oxide-semiconductor micro-electro-mechanical-systems (CMOS-MEMS) process in Taiwan semiconductor manufacturing company (TSMC). The measurement results of those prototypes are similar to their simulation results. Based on the simulation technology, more sub-wavelength hole structural effects for IRA of such thermopile device are discussed. It is found from simulation results that the results of SHAs arranged in a hexagonal shape are significantly better than the results of SHAs arranged in a square and the infrared absorption efficiencies (IAEs) of specific asymmetric rectangle and elliptical hole structure arrays are higher than the relatively symmetric square and circular hole structure arrays. The overall best results are respectively up to 3.532 and 3.573 times higher than that without sub-wavelength structure at the target temperature of 60 °C when the minimum structure line width limit of the process is ignored. Obviously, the IRA can be enhanced when the SHAs are considered in active area of the thermopile device and the structural optimization of the SHAs is absolutely necessary.

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