Crystal-orientation dependence of surface recombination velocity for silicon nitride passivated silicon wafers

1996 ◽  
Author(s):  
F.M. Schuurmans ◽  
A. Schonecker ◽  
J.A. Eikelboom ◽  
W.C. Sinke
Keyword(s):  
Silicon Nitride ◽  
Crystal Orientation ◽  
Surface Recombination ◽  
Orientation Dependence ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity ◽  
Passivated Silicon

Orientation Dependence Of Surface Passivation For Semi-Insulating Gaas

1996 ◽  
Vol 421 ◽  
Author(s):  
I.P. Koutzarov ◽  
C.H. Edirisinghe ◽  
H.E. Ruda ◽  
L.Z. Jedral ◽  
Q. Liu ◽  
...  
Keyword(s):  
Band Gap ◽  
Surface Passivation ◽  
Dielectric Film ◽  
Surface Recombination ◽  
Orientation Dependence ◽  
Film Deposition ◽  
Surface Recombination Velocity ◽  
Strong Increase ◽  
X Ray ◽  
Recombination Velocity

AbstractWe report on the orientation dependence ((100), (110) and (111) ) of photoluminescence (PL), photoreflectance (PR) and Surface Photo-Voltage (SPV) for sulfur passivated bulk semiinsulating (SI) GaAs. Near band gap PL peak intensities (bound-exciton and acceptor-related) were enhanced following (NH4)2S or S2Cl2 treatment of GaAs for all orientations. The reduction of surface recombination velocity (from PL data) was orientation dependent and especially pronounced for the case of (111)A and (111)B orientations. The effect of thin dielectric layers deposited on S-treated surfaces was also investigated, particularly for (100) and (111)A orientations. SPV data shows a strong increase in the above band gap signal after both Streatment and dielectric film deposition, which was higher than that measured for only S-treated surfaces. PR data showed an increase in the interfacial electric field following deposition of dielectric film. The results of absolute S-surface coverage measurements using particle-induced X-ray emission measurements were correlated with the optical characteristics.

Surface recombination velocity of silicon wafers by photoluminescence

2005 ◽  
Vol 86 (11) ◽  
pp. 112110 ◽  
Author(s):  
D. Baek ◽  
S. Rouvimov ◽  
B. Kim ◽  
T.-C. Jo ◽  
D. K. Schroder
Keyword(s):  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Recombination Velocity

Lifetime Characterization of Poly-Silicon Back Sealed Wafers with Bi-Surface Photoconductivity Decay Method

1997 ◽  
Vol 477 ◽  
Author(s):  
Y. Ogita ◽  
Y. Uematsu ◽  
H. Daio
Keyword(s):  
Thermal Oxidation ◽  
Wave Reflection ◽  
Surface Recombination ◽  
Silicon Wafers ◽  
Surface Recombination Velocity ◽  
Poly Silicon ◽  
Photoconductivity Decay ◽  
Recombination Velocity

ABSTRACTBi-surface photoconductivity decay (BSPCD) method has been useful to obtain the true bulk lifetime and surface recombination velocities in silicon wafers with variously finished surfaces. Thermally oxidized n-type CZ silicon wafers with and without a poly-Si back seal (PBS) were characterized with the BSPCD method using 500 MHz-UHF wave reflection. It has been found that the surface recombination velocity of the PBS surface is, 4027 cm/s while that of the no-PBS surface is 16 cm/s, for example. The very fast surface recombination velocity is attributed to the poly-Si / Si interface character. Moreover, the bulk lifetime calculated in the PBS wafer is much higher than that in the no-PBS one, which reveals the PBS gettering performance for the thermal oxidation induced contamination.

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