High power 1100-nm InGaAs/GaAs quantum dot lasers

Author(s):  
E Pavelescu ◽  
C Gilfert ◽  
M Danila ◽  
A Dinescu ◽  
J Reithmaier
2001 ◽  
Vol 78 (9) ◽  
pp. 1207-1209 ◽  
Author(s):  
R. L. Sellin ◽  
Ch. Ribbat ◽  
M. Grundmann ◽  
N. N. Ledentsov ◽  
D. Bimberg

2010 ◽  
Vol 103 (3) ◽  
pp. 609-613 ◽  
Author(s):  
D. I. Nikitichev ◽  
Y. Ding ◽  
M. Ruiz ◽  
M. Calligaro ◽  
N. Michel ◽  
...  

2014 ◽  
Vol 1635 ◽  
pp. 43-48 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
William Lotshaw ◽  
Steven C. Moss

ABSTRACTWe investigated carrier dynamics in both proton-irradiated InAs-GaAs quantum dot laser structures and in high power broad-area InAs-GaAs quantum dot lasers with windowed n-contacts using time-resolved PL (TR-PL) techniques.


2011 ◽  
Vol 44 (14) ◽  
pp. 145104 ◽  
Author(s):  
E-M Pavelescu ◽  
C Gilfert ◽  
P Weinmann ◽  
M Dănilă ◽  
A Dinescu ◽  
...  

2005 ◽  
Vol 20 (5) ◽  
pp. 340-342 ◽  
Author(s):  
S S Mikhrin ◽  
A R Kovsh ◽  
I L Krestnikov ◽  
A V Kozhukhov ◽  
D A Livshits ◽  
...  

2009 ◽  
Vol 21 (14) ◽  
pp. 999-1001 ◽  
Author(s):  
E.-M. Pavelescu ◽  
C. Gilfert ◽  
J.P. Reithmaier ◽  
A. Martin-Minguez ◽  
I. Esquivias

2013 ◽  
Author(s):  
Yongkun Sin ◽  
Stephen LaLumondiere ◽  
Brendan Foran ◽  
Neil Ives ◽  
Nathan Presser ◽  
...  

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