C-AND: Mixed Writing Scheme for Disturb Reduction in 1T Ferroelectric FET Memory

IEEE Transactions on Circuits and Systems I Regular Papers ◽

10.1109/tcsi.2021.3139736 ◽

2022 ◽

pp. 1-11

Author(s):

Mor M. Dahan ◽

Evelyn T. Breyer ◽

Stefan Slesazeck ◽

Thomas Mikolajick ◽

Shahar Kvatinsky

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