Impact of Interfacial Fixed Charges on the Electrical Characteristics of Pocket-Doped Double-Gate Tunnel FET

2016 ◽  
Vol 16 (2) ◽  
pp. 117-122 ◽  
Author(s):  
Abhishek Mishra ◽  
Rakhi Narang ◽  
Manoj Saxena ◽  
Mridula Gupta
Keyword(s):  
Double Gate ◽  
Electrical Characteristics ◽  
Fixed Charges ◽  
Tunnel Fet

scholarly journals Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-Silicon MOSFET with Fixed Charges

2021 ◽  
Author(s):  
Subba Rao Suddapalli ◽  
Rani Deepika Balavendran Joseph ◽  
Vijaya Durga Chintala ◽  
Gopi Krishna Saramekala ◽  
Srikar D ◽  
...  
Keyword(s):  
Current Gain ◽  
Threshold Region ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Gate Stack ◽  
Strained Si ◽  
Fixed Charge Density ◽  
Fixed Charges ◽  
Rf Performance ◽  
Output Conductance

Abstract In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stackgraded channel double gate-Junctionless (TMGS-GCDGJL) strained-Si (s-Si) MOSFET with fixed charge density is analyzed with the help of Sentaurus TCAD. By varying the various device parameters, the analog/RF performance of the proposed TMGS-GCDG-JL s-Si MOSFET is evaluated in terms of transconductance-generationfactor (TGF), early voltage, voltage gain, unity-powergain frequency ( f max ), unity-current-gain frequency ( f t ), and gain-transconductance frequency product (GTFP). The results confirm that the proposed TMGS-GCDGJL s-Si MOSFET has superior analog/RF performance compared to gate stack-graded channel double gatejunctionless (GS-GCDG-JL) s-Si device. However, the proposed MOSFET has less transconductance and less output conductance when compared with the GS-GCDGJL s-Si device in above threshold region, and reverse trend follows in sub-threshold region.

scholarly journals Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

2021 ◽  
Author(s):  
Subba Rao Suddapalli ◽  
Rani Deepika Balavendran Joseph ◽  
Vijaya Durga Chintala ◽  
Gopi Krishna Saramekala ◽  
Srikar D ◽  
...  
Keyword(s):  
Current Gain ◽  
Strained Silicon ◽  
Threshold Region ◽  
Double Gate ◽  
Electrical Characteristics ◽  
Gate Stack ◽  
Fixed Charges ◽  
Strong Inversion ◽  
Rf Performance ◽  
Output Conductance

Abstract In this paper, analog/radio frequency (RF) electrical characteristics of triple material gate stack-graded channel double gate-Junctionless (TMGS-GCDG-JL) strained-silicon (s-Si) MOSFET with fixed charges is analyzed with the help of Sentaurus TCAD. By varying the various device parameters, the analog/RF performance of the proposed TMGS-GCDG-JL s-Si MOSFET is evaluated in terms of early voltage, transconductance generation factor (TGF), voltage gain, unity current gain frequency ( ft ), unity power gain frequency (fmax ), and gain transconductance frequency product (GTFP). The results confirm that the proposed TMGS-GCDG-JL s-Si MOSFET has superior analog/RF performance compared to the gate stack-graded channel double gate-junctionless (GS-GCDG-JL) s-Si MOSFET. However, the proposed device has less transconductance and less output conductance in comparison with the GS-GCDG-JL s-Si MOSFET in strong inversion region, and reverse trend follows in sub-threshold region.

Investigation of Electrical Characteristics of Vertical Junction Si n-Type Tunnel FET

2018 ◽  
Vol 65 (12) ◽  
pp. 5511-5517 ◽  
Author(s):  
Po-Chin Huang ◽  
Tetsufumi Tanamoto ◽  
Masakazu Goto ◽  
Mitsuru Takenaka ◽  
Shinichi Takagi
Keyword(s):  
Electrical Characteristics ◽  
Tunnel Fet

scholarly journals Analog/RF Performance of Triple Material Gate Stack-Graded Channel Double Gate-Junctionless Strained-silicon MOSFET with Fixed Charges

Silicon ◽  
2021 ◽  
Author(s):  
Suddapalli Subba Rao ◽  
Rani Deepika Balavendran Joseph ◽  
Vijaya Durga Chintala ◽  
Gopi Krishna Saramekala ◽  
D. Srikar ◽  
...  
Keyword(s):  
Strained Silicon ◽  
Double Gate ◽  
Gate Stack ◽  
Fixed Charges ◽  
Rf Performance
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