Extending Channel Scaling Limit of p-MOSFETs Through Antimonene With Heavy Effective Mass and High Density of State

2022 ◽  
pp. 1-6
Author(s):  
Shengli Zhang ◽  
Hengze Qu ◽  
Jiang Cao ◽  
Yangyang Wang ◽  
Shengyuan A. Yang ◽  
...  
Keyword(s):  
Effective Mass ◽  
Scaling Limit ◽  
High Density ◽  
Density Of State

Effects of Cu addition on band gap energy, density of state effective mass and charge transport properties in Bi2Te3 composites

RSC Advances ◽  
2014 ◽  
Vol 4 (82) ◽  
pp. 43811-43814 ◽  
Author(s):  
Hyeon Jin Yu ◽  
Mahn Jeong ◽  
Young Soo Lim ◽  
Won-Seon Seo ◽  
O-Jong Kwon ◽  
...  
Keyword(s):  
Energy Density ◽  
Charge Transport ◽  
Transport Properties ◽  
Band Gap ◽  
Effective Mass ◽  
Band Gap Energy ◽  
Density Of State ◽  
Gap Energy

The effects of Cu addition on band gap energy, effective mass, and charge transport properties in n-type CuxBi2Te3 composites are presented.

scholarly journals Effective mass theory of monolayerδdoping in the high-density limit

2012 ◽  
Vol 85 (15) ◽  
Author(s):  
Daniel W. Drumm ◽  
Lloyd C. L. Hollenberg ◽  
Michelle Y. Simmons ◽  
Mark Friesen
Keyword(s):  
Effective Mass ◽  
High Density ◽  
Density Limit

Density-of-state effective mass and non-parabolicity parameter of impurity doped ZnO thin films

2008 ◽  
Vol 41 (19) ◽  
pp. 195409 ◽  
Author(s):  
W M Kim ◽  
I H Kim ◽  
J H Ko ◽  
B Cheong ◽  
T S Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Effective Mass ◽  
Zno Thin Films ◽  
Density Of State ◽  
Impurity Doped ◽  
Doped Zno

Model of DOS near the Top of Valence Band in Strained Si1-xGex/(001)Si

2011 ◽  
Vol 55-57 ◽  
pp. 979-982
Author(s):  
Jian Jun Song ◽  
Heng Sheng Shan ◽  
He Ming Zhang ◽  
Hui Yong Hu ◽  
Guan Yu Wang ◽  
...  
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Theoretical Basis ◽  
Hole Mobility ◽  
Physical Parameters ◽  
Density Of State ◽  
Strained Si ◽  
Hole Effective Mass ◽  
Effective Masses ◽  
Material Physics

Strained Si1-xGextechnology has been widely adopted to enhance hole mobility. One of the most important physical parameters is density of state near the top of valence band in strained Si1-xGexmaterials. In this paper, we first obtained the hole effective mass along arbitrarily k wavevector directions, the hole isotropic effective masses and density of state effective mass of hole in strained Si1-xGex/(001)Si with the framework of K.P theory. And then, model of density of state near the top of valence band in strained Si1-xGex/(001)Si materials was established, which can provide valuable references to the understanding on its material physics and theoretical basis on the other important physical parameters.

Density of state effective mass and related charge transport properties in K-doped BiCuOSe

2013 ◽  
Vol 103 (23) ◽  
pp. 232110 ◽  
Author(s):  
Dong Sun Lee ◽  
Tae-Ho An ◽  
Mahn Jeong ◽  
Hyoung-Seuk Choi ◽  
Young Soo Lim ◽  
...  
Keyword(s):  
Charge Transport ◽  
Transport Properties ◽  
Effective Mass ◽  
Density Of State

scholarly journals Long wavelength Infrared Detection, Bands Structure and effective mass in InAs/GaSb Nanostructure Superlattice

2021 ◽  
Vol 229 ◽  
pp. 01036
Author(s):  
Merieme Benaadad ◽  
Abdelhakim Nafidi ◽  
Samir Melkoud ◽  
Abderrazak Boutramine ◽  
Ali khalal
Keyword(s):  
Effective Mass ◽  
Infrared Detector ◽  
Infrared Detection ◽  
Dimensional System ◽  
Cutoff Wavelength ◽  
Density Of State ◽  
Valence Band Offset ◽  
Long Wavelength ◽  
Scattering Time ◽  
Long Wavelength Infrared

We have investigated in the bands structure and the effective mass, respectively, along the growth axis and in the plane of InAs (d1=48.5Å)/GaSb(d2=21.5Å) type II superlattice (SL), performed in the envelop function formalism. We studied the semiconductor to semimetal transition and the evolutions of the optical band gap, Eg(Γ), as a function of d1, the valence band offset Λ and the temperature. In the range of 4.2–300 K, the corresponding cutoff wavelength ranging from 7.9 to 12.6 µm, which demonstrates that this sample can be used as a long wavelength infrared detector. The position of the Fermi level, EF = 512 meV, and the computed density of state indicates that this sample is a quasi-two-dimensional system and exhibits n type conductivity. Further, we calculated the transport scattering time and the velocity of electrons on the Fermi surface. These results were compared and discussed with the available data in the literature.

Optical effective mass of high density carriers in silicon

1984 ◽  
Vol 44 (6) ◽  
pp. 617-619 ◽  
Author(s):  
H. M. van Driel
Keyword(s):  
Effective Mass ◽  
High Density
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