GaN High-Electron-Mobility-Transistor on Free-Standing GaN Substrate With Low Contact Resistance and State-of-the-Art ${f}_{{T}}$ x $ {L}_{{G}}$ Value

2022 ◽  
pp. 1-5
Author(s):  
Hanghai Du ◽  
Jincheng Zhang ◽  
Hong Zhou ◽  
Zhihong Liu ◽  
Tao Zhang ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Electron Mobility ◽  
State Of The Art ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Free Standing ◽  
High Electron Mobility ◽  
G Value

scholarly journals Cryogenically-cooled, HEMT amplifiers and receivers in 1-50 GHz range: state-of-the-art

1991 ◽  
Vol 131 ◽  
pp. 60-64
Author(s):  
Marian W. Pospieszalski
Keyword(s):  
Radio Astronomy ◽  
Electron Mobility ◽  
State Of The Art ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Recent Developments ◽  
And Performance ◽  
Design Construction

AbstractA review of the recent developments in the design, construction and performance of cryogenicallycoolable, high-electron-mobility transistor (HEMT, MODFET) amplifiers and their application in compact cryogenic receivers for radio astronomy applications is presented.

Electrical Comparison of Ta/Ti/Al/Mo/Au and Ti/Al/Mo/Au Ohmic Contacts on Undoped GaN HEMTs Structure with AlN Interlayer

2007 ◽  
Vol 17 (01) ◽  
pp. 85-89 ◽  
Author(s):  
Yunju Sun ◽  
Lester F. Eastman
Keyword(s):  
Contact Resistance ◽  
Electron Mobility ◽  
Ohmic Contacts ◽  
High Electron Mobility Transistor ◽  
Metal Contact ◽  
High Electron ◽  
Transfer Resistance ◽  
High Electron Mobility ◽  
Hemt Structure ◽  
Gan Hemts

A significant improvement of contact transfer resistance on undoped GaN/AlGaN/AlN (10 Å)/ GaN high electron mobility transistor (HEMT) structure was demonstrated using a Ta/Ti/Al/Mo/Au metallization scheme compared to a Ti/Al/Mo/Au metallization scheme. A contact resistance as low as 0.16 ± 0.03 ohm - mm was achieved by rapid thermal annealing of evaporated Ta (125 Å)/ Ti (150 Å)/ Al (900 Å)/ Mo (400 Å)/ Au (500 Å) metal contact at 700 °C for 1 min followed by 800 °C for 30 sec in a N 2 ambient. An excellent edge acuity was also demonstrated for the annealed Ta/Ti/Al/Mo/Au ohmic contacts.

The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor

2019 ◽  
Vol 217 (7) ◽  
pp. 1900694
Author(s):  
Uiho Choi ◽  
Donghyeop Jung ◽  
Kyeongjae Lee ◽  
Taemyung Kwak ◽  
Taehoon Jang ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Double Heterostructure ◽  
Aln Buffer
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