Barrier Lowering-Induced Capacitance Increase of Short-Channel Power p-GaN HEMTs at High Temperature

2022 ◽  
pp. 1-5
Author(s):  
Yajie Xin ◽  
Wanjun Chen ◽  
Ruize Sun ◽  
Xiaochuan Deng ◽  
Zhaoji Li ◽  
...  
Keyword(s):  
High Temperature ◽  
Short Channel ◽  
Channel Power ◽  
Gan Hemts

Short-channel effects in AlGAN/GaN HEMTs

2001 ◽  
Vol 82 (1-3) ◽  
pp. 238-240 ◽  
Author(s):  
O Breitschädel ◽  
L Kley ◽  
H Gräbeldinger ◽  
J.T Hsieh ◽  
B Kuhn ◽  
...  
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts

Degradation of 0.25 μm GaN HEMTs under high temperature stress test

2015 ◽  
Vol 55 (9-10) ◽  
pp. 1667-1671 ◽  
Author(s):  
M. Dammann ◽  
M. Baeumler ◽  
P. Brückner ◽  
W. Bronner ◽  
S. Maroldt ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Stress ◽  
Stress Test ◽  
High Temperature Stress ◽  
Gan Hemts

Modeling of Short-Channel Effects in GaN HEMTs

2020 ◽  
Vol 67 (8) ◽  
pp. 3088-3094
Author(s):  
Mojtaba Allaei ◽  
Majid Shalchian ◽  
Farzan Jazaeri
Keyword(s):  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts

High temperature pulsed measurements of AlGaN/GaN HEMTs on high resistive Si(111) substrate

2006 ◽  
Vol 48 (11) ◽  
pp. 2303-2305 ◽  
Author(s):  
M. Werquin ◽  
D. Ducatteau ◽  
N. Vellas ◽  
E. Delos ◽  
Y. Cordier ◽  
...  
Keyword(s):  
High Temperature ◽  
Gan Hemts ◽  
Pulsed Measurements

Short-channel AlGaN/GaN HEMTs with 70 nm T-gate

1999 ◽  
Vol 35 (23) ◽  
pp. 2018 ◽  
Author(s):  
O. Breitschädel ◽  
H. Gräbeldinger ◽  
B. Kuhn ◽  
F. Scholz ◽  
W. Walthes ◽  
...  
Keyword(s):  
Short Channel ◽  
Gan Hemts

Short gate length AlGaN/GaN HEMTs

2000 ◽  
Vol 622 ◽  
Author(s):  
O. Breitschädel ◽  
L. Kley ◽  
H. Gräbeldinger ◽  
B. Kuhn ◽  
F. Scholz ◽  
...  
Keyword(s):  
High Frequency ◽  
Device Performance ◽  
Gate Length ◽  
Short Channel Effects ◽  
Short Channel ◽  
Channel Effects ◽  
Gan Hemts ◽  
Output Characteristics ◽  
Frequency Behavior ◽  
Nm Range

ABSTRACTWe report on our progress on the fabrication of AlGaN/GaN HEMTs with extremely short gate length. AlGaN/GaN HEMTs with different gate length from 6 νm down to 60nm were fabricated to investigate DC- and high frequency behavior as well as short channel effects. We have found that the transistors with gates in the 100 nm range can be improved in the device performance with respect to transconductance and high frequency but shows also short channel effects as the loss of saturation in the output characteristics and a strong dependency of the threshold voltage on the gate length.

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