An Emitter Localization Method Based on Multiple Differential Doppler Measurements

2022 ◽  
Vol 20 (4) ◽  
pp. 537-544
William De Carvalho Rodrigues ◽  
Jose Antonio Apolinario
2021 ◽  
Md Abdullah Al Imran ◽  
Eray Arik ◽  
Yaser Dalveren ◽  
Mehmet Baris Tabakcioglu ◽  
Ali Kara

Abstract This study aims to evaluate the accuracy of a method proposed for passive localization of radar emitters around irregular terrains with a single receiver in Electronic Support Measures (ESM) systems. Previously, only the theoretical development of the localization method was targeted by the authors. In fact, this could be a serious concern in practice since there is no evidence about its accuracy under the real data gathered from realistic scenarios. Therefore, firstly, an accurate ray-tracing algorithm is adapted to the method in order to enable its implementation in practice. Then, scenarios are determined based on the geographic information system (GIS) map generated to collect high resolution digital terrain elevation data (DTED) as well as realistic localization problems for radar emitters. Next, the improved method is tested with simulations, and thus, its performance is verified for practical implementation in Electronic Warfare (EW) context for the first time in the literature. Lastly, based on the simulation results, the performance bounds of the method are also discussed.

2014 ◽  
Susan Carrigan ◽  
Evan Palmer ◽  
Philip J. Kellman

J.G. van Hassel ◽  
Xiao-Mei Zhang

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

R. Rosenkranz ◽  
W. Werner

Abstract In many cases of failure localization, passive voltage contrast (PVC) localization method does not work, because it is not possible to charge up conducting structures which supposed to be dark in the SEM and FIB images. The reason for this is leakage currents. In this article, the authors show how they succeeded in overcoming these difficulties by the application of the active voltage contrast (AVC) method as it was described as biased voltage contrast by Campbell and Soden. They identified three main cases where the PVC didn't work but where they succeeded in failure localization with the AVC method. This is illustrated with the use of two case studies. Compared to the optical beam based methods the resolution is much better so a single failing contact of e.g. 70 nm technology can clearly be identified which cannot be done by TIVA or OBIRCH.

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