Thermal Mitigation and Optimization via Multi-Tier Bond Wire Layout for IGBT Modules Considering Multicellular Electro-Thermal Effect

Yu Chen ◽  
Qiang Wu ◽  
Chengmin Li ◽  
Haoze Luo ◽  
Yuanye Xia ◽  
Wenzhao Liu ◽  
Dao Zhou ◽  
Francesco Iannuzzo ◽  
Michael Hartmann ◽  
Frede Blaabjerg

Energies ◽  
2019 ◽  
Vol 12 (9) ◽  
pp. 1791 ◽  
Qingyi Kong ◽  
Mingxing Du ◽  
Ziwei Ouyang ◽  
Kexin Wei ◽  
William Gerard Hurley

On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

2013 ◽  
Vol 60 (7) ◽  
pp. 2760-2770 ◽  
Vanessa Smet ◽  
François Forest ◽  
Jean-Jacques Huselstein ◽  
Amgad Rashed ◽  
Frédéric Richardeau

T. Sato ◽  
S. Kitamura ◽  
T. Sueyoshl ◽  
M. Iwatukl ◽  
C. Nielsen

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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