Toward room temperature operation and high density integration of single electron devices

2002 ◽  
Author(s):  
H. Hasegawa
Keyword(s):  
Room Temperature ◽  
High Density ◽  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices ◽  
Room Temperature Operation

Metal-Based Room-Temperature Operating Single Electron Devices Using Scanning Probe Oxidation

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 477-479 ◽  
Author(s):  
Kazuhiko Matsumoto ◽  
Yoshitaka Gotoh ◽  
Tatsuro Maeda ◽  
John A. Dagata ◽  
JamesS. Harris
Keyword(s):  
Room Temperature ◽  
Scanning Probe ◽  
Single Electron ◽  
Temperature Operating ◽  
Single Electron Devices ◽  
Electron Devices

Molecular-Mediated Single-Electron Devices Operating at Room Temperature

2006 ◽  
Vol 45 (5A) ◽  
pp. 4285-4289 ◽  
Author(s):  
Touichiro Goto ◽  
Katsuhiko Degawa ◽  
Hiroshi Inokawa ◽  
Kazuaki Furukawa ◽  
Hiroshi Nakashima ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices

CMOS-compatible fabrication of room-temperature single-electron devices

2008 ◽  
Vol 3 (10) ◽  
pp. 603-608 ◽  
Author(s):  
Vishva Ray ◽  
Ramkumar Subramanian ◽  
Pradeep Bhadrachalam ◽  
Liang-Chieh Ma ◽  
Choong-Un Kim ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Electron ◽  
Cmos Compatible ◽  
Single Electron Devices ◽  
Electron Devices

Advantages of the Asymmetric Tunnel Barrier for High-Density Integration of Single Electron Devices

1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4143-4146 ◽  
Author(s):  
Yoshinari Matsumoto ◽  
Taturo Hanajiri ◽  
Tohru Toyabe ◽  
Takuo Sugano
Keyword(s):  
High Density ◽  
Single Electron ◽  
Tunnel Barrier ◽  
Single Electron Devices ◽  
Electron Devices

Room-Temperature Single-Electron Devices

1994 ◽  
Author(s):  
Kazuo Yano ◽  
Tomoyuki Ishii ◽  
Takashi Hashimoto ◽  
Takashi Kobayashi ◽  
Fumio Murai ◽  
...  
Keyword(s):  
Room Temperature ◽  
Single Electron ◽  
Single Electron Devices ◽  
Electron Devices
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