HIGH RESOLUTION MAGNETIC MICROSTRUCTURE IMAGING USING SECONDARY ELECTRON SPIN POLARIZATION ANALYSIS IN A SCANNING ELECTRON MICROSCOPE

1985 ◽  
Vol 139 (2) ◽  
pp. RP1-RP2 ◽  
Author(s):  
J. Unguris ◽  
G. G. Hembree ◽  
R. J. Celotta ◽  
D. T. Pierce
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Spin Polarization ◽  
Electron Spin ◽  
Secondary Electron ◽  
Electron Spin Polarization ◽  
Polarization Analysis ◽  
Magnetic Microstructure ◽  
Scanning Electron

Field Emission SEM with a Newly Developed FEGUN and Conical Strongly Excited Objective Lens

2000 ◽  
Vol 6 (S2) ◽  
pp. 764-765
Author(s):  
H. Kazumori ◽  
A. Yamada ◽  
M. Mita ◽  
T. Nokuo ◽  
M. Saito
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Objective Lens ◽  
Probe Current ◽  
Large Samples ◽  
Low Emission ◽  
Working Distance ◽  
Scanning Electron

A newly developed cold FE-GUN which enables to us to obtain large probe current and low emission noise, and conical strongly excited objective lens has been installed on the JSM-6700F Scanning Electron Microscope (SEM). In the range of accelerating voltages from 0.5 to 15kV, this instrument has got much better resolution as compared with in-lens type SEM (Ohyama et al 1986)(Fig. 1). We can obtain high-resolution secondary electron images with large samples (ex. 150mm ϕ×10mmH).Our old type objective lens (Kazumori et al 1994) has the limitation of working distance (WD), but the new lens enables us to work at very short WD at accelerating voltage of 15kV. As a result the spherical (Cs) and chromatic (Cc) aberration constants are 1.9mm and 1.7mm respectively at a WD of 3mm.In order to get large probe current, we increased emission current and got near the distance between the t ip of emi tter and the pr inciple plane of condenser lens.

A Micromanipulator for Use in the Column of a Scanning Electron Microscope

1972 ◽  
Vol 30 ◽  
pp. 372-373
Author(s):  
James B. Pawley
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Secondary Electron ◽  
Surface Hardness ◽  
Micro Scale ◽  
Macroscopic Object ◽  
Secondary Electron Mode ◽  
Electron Mode ◽  
Scanning Electron

Used in the secondary electron mode, the Scanning Electron Microscope (SEM) produces an image of the outside surface of a microscopic sample which looks very similar to what one might expect to see if the sample was a diffusely illuminated macroscopic object viewed with the unaided eye. Part of the familiarity of such an image is associated with the fact that one seems to look at the sample rather than through it, as in the case with the conventional electron microscope or the high resolution light microscope. A resulting limitation is the fact that an object of interest cannot be observed if it is below the outer surface. It has been shown (Gane and Bowden 1968) that useful surface hardness information can be obtained on a micro scale by observing the deformation produced when a small stylus, attached to a D'Arsonval meter movement, is brought to bear on the surface of a sample while it is in the SEM.

Field Emission SEM Equipped With Noise Compensator

1973 ◽  
Vol 31 ◽  
pp. 302-303
Author(s):  
S. Saito ◽  
H. Todokoro ◽  
S. Nomura ◽  
T. Komoda
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Field Emission ◽  
Low Contrast ◽  
Probe Current ◽  
High Resolution Images ◽  
Scanning Electron

Field emission scanning electron microscope (FESEM) features extremely high resolution images, and offers many valuable information. But, for a specimen which gives low contrast images, lateral stripes appear in images. These stripes are resulted from signal fluctuations caused by probe current noises. In order to obtain good images without stripes, the fluctuations should be less than 1%, especially for low contrast images. For this purpose, the authors realized a noise compensator, and applied this to the FESEM.Fig. 1 shows an outline of FESEM equipped with a noise compensator. Two apertures are provided gust under the field emission gun.

Edge Penetration Effects in the Low-Loss Electron Image in the SEM

1988 ◽  
Vol 46 ◽  
pp. 202-203
Author(s):  
Oliver C. Wells
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Beam Energy ◽  
Secondary Electron ◽  
Sharp Edge ◽  
Beam Diameter ◽  
Low Loss ◽  
Additional Information ◽  
Electron Image ◽  
Scanning Electron

The low-loss electron (LLE) image in the scanning electron microscope (SEM) is useful for the study of uncoated photoresist and some other poorly conducting specimens because it is less sensitive to specimen charging than is the secondary electron (SE) image. A second advantage can arise from a significant reduction in the width of the “penetration fringe” close to a sharp edge. Although both of these problems can also be solved by operating with a beam energy of about 1 keV, the LLE image has the advantage that it permits the use of a higher beam energy and therefore (for a given SEM) a smaller beam diameter. It is an additional attraction of the LLE image that it can be obtained simultaneously with the SE image, and this gives additional information in many cases. This paper shows the reduction in penetration effects given by the use of the LLE image.

High Resolution Scanning Electron Microscopy

1991 ◽  
Vol 49 ◽  
pp. 478-479
Author(s):  
David Joy ◽  
James Pawley
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Electron Beam ◽  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Electron Probe ◽  
Impact Point ◽  
Interaction Volume ◽  
Scanning Electron

The scanning electron microscope (SEM) builds up an image by sampling contiguous sub-volumes near the surface of the specimen. A fine electron beam selectively excites each sub-volume and then the intensity of some resulting signal is measured. The spatial resolution of images made using such a process is limited by at least three factors. Two of these determine the size of the interaction volume: the size of the electron probe and the extent to which detectable signal is excited from locations remote from the beam impact point. A third limitation emerges from the fact that the probing beam is composed of a finite number of discrete particles and therefore that the accuracy with which any detectable signal can be measured is limited by Poisson statistics applied to this number (or to the number of events actually detected if this is smaller).

Linewidth measurement using the low voltage SEM

1986 ◽  
Vol 44 ◽  
pp. 652-653
Author(s):  
M.G. Rosenfield
Keyword(s):  
Electron Microscope ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Secondary Electron ◽  
Low Voltage ◽  
Fabrication Process ◽  
Critical Dimensions ◽  
Linewidth Measurement ◽  
Threshold Technique ◽  
Scanning Electron

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.

FIB Enhancement of Mechanically Polished Cross-sections

2019 ◽  
Author(s):  
Becky Holdford
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Cross Sections ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
High Resolution Imaging ◽  
Chemical Attack ◽  
Resolution Imaging ◽  
Scanning Electron

Abstract On mechanically polished cross-sections, getting a surface adequate for high-resolution imaging is sometimes beyond the analyst’s ability, due to material smearing, chipping, polishing media chemical attack, etc.. A method has been developed to enable the focused ion beam (FIB) to re-face the section block and achieve a surface that can be imaged at high resolution in the scanning electron microscope (SEM).

SEM-Based Nanoprobing on 40, 32 and 28 nm CMOS Devices Challenges for Semiconductor Failure Analysis

2013 ◽  
Author(s):  
Erik Paul ◽  
Holger Herzog ◽  
Sören Jansen ◽  
Christian Hobert ◽  
Eckhard Langer
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Failure Analysis ◽  
Case Studies ◽  
State Of The Art ◽  
Root Cause ◽  
Highly Efficient ◽  
Technology Nodes ◽  
Scanning Electron

Abstract This paper presents an effective device-level failure analysis (FA) method which uses a high-resolution low-kV Scanning Electron Microscope (SEM) in combination with an integrated state-of-the-art nanomanipulator to locate and characterize single defects in failing CMOS devices. The presented case studies utilize several FA-techniques in combination with SEM-based nanoprobing for nanometer node technologies and demonstrate how these methods are used to investigate the root cause of IC device failures. The methodology represents a highly-efficient physical failure analysis flow for 28nm and larger technology nodes.

A Working Method for Adapting the (SEM) Scanning Electron Microscope to Produce (STEM) Scanning Transmission Electron Microscope Images

2002 ◽  
Author(s):  
Edward Coyne
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Integrated Circuits ◽  
Theoretical Idea ◽  
Cross Sectional ◽  
Additional Advantage ◽  
Transmission Electron ◽  
Resolution Element ◽  
Scanning Electron

Abstract This paper describes the problems encountered and solutions found to the practical objective of developing an imaging technique that would produce a more detailed analysis of IC material structures then a scanning electron microscope. To find a solution to this objective the theoretical idea of converting a standard SEM to produce a STEM image was developed. This solution would enable high magnification, material contrasting, detailed cross sectional analysis of integrated circuits with an ordinary SEM. This would provide a practical and cost effective alternative to Transmission Electron Microscopy (TEM), where the higher TEM accelerating voltages would ultimately yield a more detailed cross sectional image. An additional advantage, developed subsequent to STEM imaging was the use of EDX analysis to perform high-resolution element identification of IC cross sections. High-resolution element identification when used in conjunction with high-resolution STEM images provides an analysis technique that exceeds the capabilities of conventional SEM imaging.

Microstructures of Low Angle Boundaries of the Second Generation Single Crystal Superalloy DD6

2011 ◽  
Vol 284-286 ◽  
pp. 1584-1587
Author(s):  
Zhen Xue Shi ◽  
Jia Rong Li ◽  
Shi Zhong Liu ◽  
Jin Qian Zhao
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Thin Layer ◽  
Single Crystal ◽  
Second Generation ◽  
Three Dimensional ◽  
Single Crystal Superalloy ◽  
Transition Electron ◽  
Scanning Electron

The specimens of low angle boundaries were machined from the second generation single crystal superalloy DD6 blades. The microstructures of low angle boundaries (LAB) were investigated from three scales of dendrite, γ′ phase and atom with optical microscopy (OM), scanning electron microscope (SEM), transition electron microscope (TEM) and high resolution transmission electrion microscopy (HREM). The results showed that on the dendrite scale LAB is interdendrite district formed by three dimensional curved face between the adjacent dendrites. On the γ′ phase scale LAB is composed by a thin layer γ phase and its bilateral imperfect cube γ′ phase. On the atom scale LAB is made up of dislocations within several atom thickness.

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