Polymer Skins With Switchable Roughness

Author(s):  
Nicholas J. Morris ◽  
Joaquin M. Gutierrez ◽  
Ever J. Barbero ◽  
Darran R. Cairns

Polyvinyl alcohol (PVA) films with embedded electrically-responsive liquid crystal (LC) ellipsoids were fabricated to develop a membrane coating featuring tunable roughness. Membranes (∼30 microns thick) were placed between opposing pieces of indium-tin oxide (ITO) glass, creating electrodes for creation of a uniform electric field. Applied voltages ranged from 0V–350 V, as films were observed using an optical microscope. Thin-film interference patterns were observed in various regions of each film and were measured. Contour plots of film displacement were created and showed elevations across the observed region. The area of the first dark fringe regions, assumed to be in contact with the top glass surface, were measured as a function of applied voltage. The maximum displacement of the film was estimated to reach 1.5 microns and the area in contacted with the top glass surface increased 127% between 0–350 V. Finite element modelling results illustrate the influence of polarity on the roughness of the film surface.


2005 ◽  
Vol 475-479 ◽  
pp. 3689-3692
Author(s):  
Hui Zhong Ma ◽  
Lan Zhang ◽  
Jun Jie Zhang ◽  
Yun Hai Du ◽  
Ning Yao ◽  
...  

A flexible carbon thin film was prepared by laser induced when phase changing of polyimide thin film. There is no substrate for this thin film. It could be curved at any angle. The electron emission properties of the prepared thin film were measured by a diode mechanism; the thin film was used as a cathode and indium-tin-oxide (ITO) glass as an anode. The turn-on field of the thin film was about 2.1 V/µm. The current density of the thin film was about 150 µA/cm2 at the electric field of 4.5 V/µm. The electron emission measurements indicate that the thin film could be a good candidate electron emission material in flat panel display or be used as other electron source. The morphology and structure of the thin film were investigated by optical microscope and Raman spectroscopy.



1999 ◽  
Vol 7 (1) ◽  
pp. 10-10
Author(s):  
John McCaffrey

When silicon samples are thinned and backlit, they display a series of colors; from deep red in the thicker (-5-10 μm) regions, to orange and yellow in thinner regions, to effectively transparent in the thinnest regions, This colorful effect can be used as a technique for monitoring the thickness of cross-sectional samples prepared for transmission electron microscopy (TEM).As seen in Figure 1, a cross-sectional TEM sample of a thin, indium tin oxide (ITO) film on glass was being investigated, A sample was prepared for low-angle ion milling by the Barna method with the addition of an adjacent piece of silicon for a thickness indicator. The colors of silicon could then be monitored to indicate when the ITO/glass sample was thin enough for TEM examination. In the figure, the arrow indicates the region of interest on the ITO/glass sample. This figure was produced by photographing the entire TEM sample through an optical microscope, backlit with a standard quartzhalogen illuminator.



Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 560
Author(s):  
Ravindra Ketan Mehta ◽  
Anupama Bhat Kaul

In this work, we implemented liquid exfoliation to inkjet-print two-dimensional (2D) black phosphorous (BP) and molybdenum disulfide (MoS2) p–n heterojunctions on a standard indium tin oxide (ITO) glass substrate in a vertical architecture. We also compared the optical and electrical properties of the inkjet-printed BP layer with that of the MoS2 and the electrical properties of the mechanically exfoliated MoS2 with that of the inkjet-printed MoS2. We found significant differences in the optical characteristics of the inkjet-printed BP and MoS2 layers attributed to the differences in their underlying crystal structure. The newly demonstrated liquid exfoliated and inkjet-printed BP–MoS2 2D p–n junction was also compared with previous reports where mechanically exfoliated BP–MoS2 2D p–n junction were used. The electronic transport properties of mechanically exfoliated MoS2 membranes are typically better compared to inkjet-printed structures but inkjet printing offers a cost-effective and quicker way to fabricate heterostructures easily. In the future, the performance of inkjet-printed structures can be further improved by employing suitable contact materials, amongst other factors such as modifying the solvent chemistries. The architecture reported in this work has potential applications towards building solar cells with solution processed 2D materials in the future.



2012 ◽  
Vol 1511 ◽  
Author(s):  
Ippei Ishikawa ◽  
Keisuke Sakurai ◽  
Shuji Kiyohara ◽  
Taisuke Okuno ◽  
Hideto Tanoue ◽  
...  

ABSTRACTThe microfabrication technologiesfor organic light-emitting devices (OLEDs) are essential to the fabrication of the next generation of light-emitting devices. The micro-OLEDs fabricated by room-temperature curing nanoimprint lithography (RTC-NIL) using diamond molds have been investigated. However, light emissions from 10 μm-square-dot OLEDs fabricated by the RTC-NIL method have not been uniform. Therefore, we proposed the fabrication of micro-OLEDs by room-temperature curing nanocontact-print lithography (RTC-NCL) using the diamond-like carbon (DLC) mold. The DLC molds used in RTC-NCL were fabricated by an electron cyclotron resonance (ECR) oxygen ion shower with polysiloxane oxide mask in electron beam (EB) lithography technology. The mold patterns are square and rectangle dots which has 10 µm-width, 10 µm-width and50 µm-length, respectively. The height of the patterns is 500 nm. The DLC molds were used to form the insulating layer of polysiloxane in RTC-NCL. We carried out the RTC-NCL process using the DLC mold under the following optimum conditions: 0.1 MPa-pressure for coating DLC mold with polysiloxane film, 2.1 MPa-pressure for transferring polysiloxane from DLC mold pattern to indium tin oxide (ITO) glass substrate. We deposited N, N'-Diphenyl -N, N'-di (m-tolyl)benzidine (TPD) [40 nm-thickness] as hole transport layer / Tris(8-quinolinolato)aluminum (Alq3) [40 nm-thickness] as electron transport layer / Al [200 nm-thickness] as cathode on ITO glass substrateas anode in this order. We succeeded in formation of the insulating layer with square and rectangle dots which has 10 µm-width,10 µm-width and 50 µm-length, and operation of micro-OLEDs by RTC-NIL using DLC molds.



Biosensors ◽  
2018 ◽  
Vol 8 (4) ◽  
pp. 118
Author(s):  
Rodica Ionescu ◽  
Raphael Selon ◽  
Nicolas Pocholle ◽  
Lan Zhou ◽  
Anna Rumyantseva ◽  
...  

Conductive indium-tin oxide (ITO) and non-conductive glass substrates were successfully modified with embedded gold nanoparticles (AuNPs) formed by controlled thermal annealing at 550 °C for 8 h in a preselected oven. The authors characterized the formation of AuNPs using two microscopic techniques: scanning electron microscopy (SEM) and atomic force microscopy (AFM). The analytical performances of the nanostructured-glasses were compared regarding biosensing of Hsp70, an ATP-driven molecular chaperone. In this work, the human heat-shock protein (Hsp70), was chosen as a model biomarker of body stress disorders for microwave spectroscopic investigations. It was found that microwave screening at 4 GHz allowed for the first time the detection of 12 ng/µL/cm2 of Hsp70.



2010 ◽  
Vol 6 (2) ◽  
pp. 121-126 ◽  
Author(s):  
Fitria Rahmawati ◽  
Sayekti Wahyuningsih ◽  
Pamularsih A.W

Thin film of TiO2 on graphite substrat has been prepared by means of chemical bath deposition. Cetyltrimethylammonium Bromide served  as linking agent of synthesized TiO2 to graphite substrate.The optical microscope and Scanning Electron Microscope (SEM) indicate that surfactant concentration affects the pore morphology of thin film Surface Area Analysis (SAA) of thin film indicated that the pore of thin film included in mesopore category. The anatase phase of TiO2 quantity arised as the surfactant concentration increase, gave high efficiency of induced photon conversion to current efficiency (% IPCE).   Keywords: thin film, TiO2, deposition, graphite



2021 ◽  
Author(s):  
J. Koaib ◽  
N. Bouguila ◽  
M. Kraini ◽  
I. Halidou ◽  
K. Khirouni ◽  
...  

Abstract In2S3 thin films were grown on indium tin oxide (ITO) glass substrate by chemical spray pyrolysis technique at 360°C. The structural analysis of the deposited films shows a combination of tetragonal and cubic structures. The average crystallite size is about 25 nm. The electrical properties of In2S3 thin films have been investigated in a wide frequency (40Hz-100MHz) and temperature (400 K-660 K) ranges.We find that the electrical conductance of the In2S3 thin films is frequency and temperature dependent. The dc conductance shows a semi-conductor behavior for In2S3 films over the explored range of temperature and it follows the Arrhenius law with different activation energies. The variation of ac conductance and the frequency exponent `s’ are explained by the correlated barrier hopping (CBH) model. The Nyquist plots of impedance exhibit semicircle arcs and an electrical equivalent circuit has been suggested to interpret the impedance results.



2021 ◽  
Author(s):  
Younes Ziat ◽  
Hamza Belkhanchi ◽  
Maryama Hammi ◽  
Charaf Laghlimi ◽  
A Moutcine

Abstract Recently, the rise of two dimensional amorphous nanostructured thin films have ignited a big interest because of their intriguingly isotropic structural and physical properties leading to potential applications in the nano-optoelectronics. However, according to literature, most of optoelectronic properties are investigated on chalcogenides related heterostructures. This has motivated the present work aiming to provide a new platform for the fabrication, examination of the properties and the applications of 2D nanostructured thin films based on epoxy/silicone blend. Thin films of Epoxy/Silicone loaded with nitrogen doped carbon nanotubes (N-CNTs) were prepared by sol-gel method and deposited on Indium Tin Oxide (ITO) glass substrates at room temperature. Further examination of optical properties aimed the investigation of optical pseudo-gap and Urbach energy and enabled the determination of processed films thickness based on Manifacier and Swanepol method. The results indicated that the unloaded thin films have a direct optical transition with a value of 3.61 eV followed by noticeable shift towards narrowing gaps depending on the loading rate. Urbach's energy is 0.19 eV for the unloaded thin films, and varies from 0.43 to 1.33 eV for the loaded thin films with increasing the rate of N-CNTs. It is inversely variable with the optical pseudo-gap. Finally, Epoxy/Silicone loaded with N-CNTs nanocomposites films can be developed as active layers with specific optical characteristics, giving the possibility to be used in electro-optical applications.



2019 ◽  
Vol 13 (28) ◽  
pp. 44-51
Author(s):  
Ameer F. Abdulameer

This study describe the effect of temperature on the opticalproperties of nickel(ii) phthalocyanine tetrasulfonic acid tetrasodiumsalt (NiPcTs) organic thin films which are prepared by spin coatingon indium tin oxide (ITO-glass). The optical absorption spectra ofthese thin films are measured. Present studies reveal that the opticalband gap energies of NiPcTs thin films are dependent on theannealing temperatures. The optical band gap decreases with increasein annealing temperature, then increased when the temperature risingto 473K. To enhance the results of Uv-Vis measurements and getmore accurate values of optical energy gaps; the Photoluminescencespectra of as-deposited and annealed NiPcTs thin films was studied.FTIR measurements for NiPcTs thin films also carried out in thiswork and gave good information about the NiPcTs bonds and itslocations as a compared with H2Pc as a reference.



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