Direct-current and radio-frequency characterization of submicron striped-channel field effect transistor structures using focused ion beam and electron-beam lithography

1992 ◽  
Vol 10 (6) ◽  
pp. 2945 ◽  
Author(s):  
M. M. Hashemi
Keyword(s):  
Electron Beam ◽  
Radio Frequency ◽  
Direct Current ◽  
Electron Beam Lithography ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Effect Transistor

SiGe Nanowire Field Effect Transistors

2008 ◽  
Vol 8 (1) ◽  
pp. 457-460 ◽  
Author(s):  
Cheng Qi ◽  
Yaswanth Rangineni ◽  
Gary Goncher ◽  
Raj Solanki ◽  
Kurt Langworthy ◽  
...  
Keyword(s):  
Electron Beam Lithography ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Focused Ion Beam ◽  
Field Effect Transistors ◽  
Ion Beam ◽  
Boron Doped ◽  
High K ◽  
Pt Electrodes ◽  
Effect Transistor

Si0.5Ge0.5 nanowires have been utilized to fabricate source-drain channels of p-type field effect transistors (p-FETs). These transistors were fabricated using two methods, focused ion beam (FIB) and electron beam lithography (EBL). The electrical analyses of these devices show field effect transistor characteristics. The boron-doped SiGe p-FETs with a high-k (HfO2) insulator and Pt electrodes, made via FIB produced devices with effective hole mobilities of about 50 cm2V−1s−1. Similar transistors with Ti/Au electrodes made via EBL had effective hole mobilities of about 350 cm2V−1s−1.

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