Detection of H2 facilitated by ionic liquid gating of tungsten oxide films

2022 ◽  
Vol 40 (1) ◽  
pp. 013202
Author(s):  
Martin S. Barbosa ◽  
Ranilson A. da Silva ◽  
Clara Santato ◽  
Marcelo O. Orlandi
Keyword(s):  
Ionic Liquid ◽  
Tungsten Oxide ◽  
Oxide Films

scholarly journals Spatially Ordered Matrix of Nanostructured Tin–Tungsten Oxides Nanocomposites Formed by Ionic Layer Deposition for Gas Sensing

Sensors ◽  
2021 ◽  
Vol 21 (12) ◽  
pp. 4169
Author(s):  
Gennady Gorokh ◽  
Natalia Bogomazova ◽  
Abdelhafed Taleb ◽  
Valery Zhylinski ◽  
Timur Galkovsky ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Gas Sensing ◽  
Oxide Films ◽  
High Sensitivity ◽  
Anodic Alumina ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Layer By Layer ◽  
Gas Sensitivity ◽  
Nanoporous Anodic Alumina

The process of layer-by-layer ionic deposition of tin-tungsten oxide films on smooth silicon substrates and nanoporous anodic alumina matrices has been studied. To achieve the film deposition, solutions containing cationic SnF2 or SnCl2 and anionic Na2WO4 or (NH4)2O·WO3 precursors have been used. The effect of the solution compositions on the films deposition rates, morphology, composition, and properties was investigated. Possible mechanisms of tin-tungsten oxide films deposition into the pores and on the surface of anodic alumina are discussed. The electro-physical and gas-sensitive properties of nanostructured SnxWyOz films have been investigated. The prepared nanocomposites exhibit stable semiconductor properties characterized by high resistance and low temperature coefficient of electrical resistance of about 1.6 × 10−3 K−1. The sensitivity of the SnxWyOz films to 2 and 10 ppm concentrations of ammonia at 523 K was 0.35 and 1.17, respectively. At concentrations of 1 and 2 ppm of nitrogen dioxide, the sensitivity was 0.48 and 1.4, respectively, at a temperature of 473 K. At the temperature of 573 K, the sensitivity of 1.3 was obtained for 100 ppm of ethanol. The prepared nanostructured tin-tungsten oxide films showed promising gas-sensitivity, which makes them a good candidate for the manufacturing of gas sensors with high sensitivity and low power consumption.

Gasochromic Properties of Nanostructured Tungsten Oxide Films Prepared by Sputtering Deposition

2007 ◽  
Vol 46 (9B) ◽  
pp. 6315-6318 ◽  
Author(s):  
Katsuyoshi Takano ◽  
Aichi Inouye ◽  
Shunya Yamamoto ◽  
Masaki Sugimoto ◽  
Masahito Yoshikawa ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Oxide Films ◽  
Sputtering Deposition

Preparation and properties of reactively sputtered tungsten oxide films

1982 ◽  
Vol 53 (4) ◽  
pp. 3070-3075 ◽  
Author(s):  
H. Kaneko ◽  
K. Miyake ◽  
Y. Teramoto
Keyword(s):  
Tungsten Oxide ◽  
Oxide Films

Graphene Nanoparticles Decorated Silicon Nanowires with Tungsten Oxide Counter Electrode for Quasi-Solid State Hybrid Solar Cells

2021 ◽  
Author(s):  
Ankita Kolay ◽  
Manoranjan Ojha ◽  
Melepurath Deepa
Keyword(s):  
Ionic Liquid ◽  
Solar Cells ◽  
Solid State ◽  
Tungsten Oxide ◽  
Silicon Nanowires ◽  
Counter Electrode ◽  
Near Infrared ◽  
Hybrid Solar Cells ◽  
Functionalized Graphene ◽  
Graphene Nanoparticles

Anchoring ionic liquid functionalized graphene nanoparticles (IL-GNP) to silicon nanowires (SiNW) improves the solar spectral utilization from visible to near infrared (NIR). Due to the bandgap of IL-GNP in the...

Properties and electrochromic performances of reactively sputtered tungsten oxide films with water as reactive gas

2005 ◽  
Vol 200 (1-4) ◽  
pp. 232-235 ◽  
Author(s):  
H. Sadiki ◽  
J.F. Pierson ◽  
C. Rousselot ◽  
N. Martin ◽  
G. Terwagne
Keyword(s):  
Tungsten Oxide ◽  
Oxide Films ◽  
Reactive Gas

scholarly journals P1GS.13 - Tungsten Oxide Films with High Sensitivity to Nitric Oxide

2018 ◽  
Author(s):  
S. Krutovertsev ◽  
A. Tarasova ◽  
O. Ivanova ◽  
L. Krutovertseva
Keyword(s):  
Nitric Oxide ◽  
Tungsten Oxide ◽  
Oxide Films ◽  
High Sensitivity
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