Use of in situ electrical conductance measurements to understand the chemical mechanisms and chamber wall effects during vapor phase infiltration doping of poly(aniline) with TiCl4 + H2O

2022 ◽  
Vol 40 (1) ◽  
pp. 013418
Author(s):  
Kristina L. Malinowski ◽  
Shawn A. Gregory ◽  
Jamie P. Wooding ◽  
Oliver B. Hvidsten ◽  
Alexandra Jungreis ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Electrical Conductance ◽  
Chamber Wall ◽  
Wall Effects ◽  
Chemical Mechanisms ◽  
Poly Aniline

Deposition and Crystallisation Behaviour of Amorphous Silicon Thin Films Obtained by Pyrolysis of Disilane Gas at Very Low Pressure

1994 ◽  
Vol 345 ◽  
Author(s):  
T. Kretz ◽  
D. Pribat ◽  
P. Legagneux ◽  
F. Plais ◽  
O. Huet ◽  
...  
Keyword(s):  
Activation Energy ◽  
Growth Rate ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Electrical Conductance ◽  
Chemical Vapor ◽  
Crystalline Fraction ◽  
Silicon Thin Films ◽  
Crystallisation Behaviour

AbstractHigh purity amorphous silicon layers were obtained by ultrahigh vacuum (millitorr range) chemical vapor deposition (UHVCVD) from disilane gas. The crystalline fraction of the films was monitored by in situ electrical conductance measurements performed during isothermal annealings. The experimental conductance curves were fitted with an analytical expression, from which the characteristic crystallisation time, tc, was extracted. Using the activation energy for the growth rate extracted from our previous work, we were able to determine the activation energy for the nucleation rate for the analysed-films. For the films including small crystallites we have obtained En ∼ 2.8 eV, compared to En ∼ 3.7 eV for the completely amorphous ones.

AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation

2011 ◽  
Vol 315 (1) ◽  
pp. 204-207 ◽  
Author(s):  
Kai Cheng ◽  
S. Degroote ◽  
M. Leys ◽  
F. Medjdoub ◽  
J. Derluyn ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Heat Transfer and Phase Transformations in Laser Annealing of Thin a-Si Films

2001 ◽  
Author(s):  
Seung-Jae Moon ◽  
Minghong Lee ◽  
Costas P. Grigoropoulos
Keyword(s):  
Laser Annealing ◽  
Thermal Emission ◽  
Electrical Conductance ◽  
Nanosecond Laser ◽  
Solidification Velocity ◽  
Emission Measurement ◽  
Excimer Laser Annealing ◽  
In Situ Experiments ◽  
Si Films

Abstract The liquid-solid interface motion and the temperature history of thin Si films during excimer laser annealing are observed by in situ experiments combining time-resolved (∼lns) thermal emission measurements, optical reflectance and transmittance at near-IR wavelengths and electrical conductance measurements. The spontaneous nucleation temperature in the supercooled liquid melt is studied from the thermal emission measurement A new double laser recrystallization technique using a temporally modulated CW Ar+ laser in conjunction with a superposed nanosecond laser pulse produces lateral grain growth at the irradiated spot. The laser melting process is numerically simulated. High-resolution laser flash photography enabled in-situ direct visualization of the resolidification process. The images reveal lateral solidification velocity of about 10 m/s.

Vapor-phase Oxidation of Cyclohexane over Supported Fe-Mn Catalysts: In-Situ DRIFTS studies

2021 ◽  
Author(s):  
Vijendra Kumar Yadav ◽  
Taraknath Das
Keyword(s):  
Surface Area ◽  
Raman Spectra ◽  
Vapor Phase ◽  
Oxide Catalysts ◽  
Incipient Wetness Impregnation ◽  
Impregnation Method ◽  
In Situ Drifts ◽  
Mn Oxide ◽  
Phase Oxidation

Alumina-supported Fe-Mn oxide catalysts were synthesized by the incipient wetness impregnation method. The catalysts were characterized by using various characterization techniques such as surface area, XRD, H2-TPR, and Raman spectra...

Novel in situ self-separation of a 2 in. free-standing m-plane GaN wafer from an m-plane sapphire substrate by HCl chemical reaction etching in hydride vapor-phase epitaxy

CrystEngComm ◽  
2016 ◽  
Vol 18 (40) ◽  
pp. 7690-7695
Author(s):  
Seohwi Woo ◽  
Sangil Lee ◽  
Uiho Choi ◽  
Hyunjae Lee ◽  
Minho Kim ◽  
...  
Keyword(s):  
Chemical Reaction ◽  
Vapor Phase ◽  
Sapphire Substrate ◽  
Vapor Phase Epitaxy ◽  
Hydride Vapor Phase Epitaxy ◽  
Free Standing

A 2 in.-diameter free-standing m-plane GaN wafer was fabricated through in situ self-separation from m-plane sapphire using HCl chemical reaction etching (HCRE) in hydride vapor-phase epitaxy (HVPE).

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