Pulsed chemical vapor deposition of cobalt and cobalt carbide thin films

2022 ◽  
Vol 40 (2) ◽  
pp. 023401
Author(s):  
Sen Chen ◽  
Xiangyu Zhang ◽  
Bowen Liu ◽  
Zhongwei Liu
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Cobalt Carbide

Oxygen Impurity in Cubic Boron Nitride Thin Films Prepared by Plasma-enhanced Chemical Vapor Deposition

2010 ◽  
Vol 25 (7) ◽  
pp. 748-752 ◽  
Author(s):  
Hang-Sheng YANG ◽  
Fa-Min QIU ◽  
An-Min NIE
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Boron Nitride ◽  
Vapor Deposition ◽  
Cubic Boron Nitride ◽  
Chemical Vapor ◽  
Oxygen Impurity

High Band Gap Nanocrystalline Tungsten Carbide (nc-WC) Thin Films Grown by Hot Wire Chemical Vapor Deposition (HW-CVD) Method

2018 ◽  
Vol 10 (3) ◽  
pp. 03001-1-03001-6 ◽  
Author(s):  
Bharat Gabhale ◽  
◽  
Ashok Jadhawar ◽  
Ajinkya Bhorde ◽  
Shruthi Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Tungsten Carbide ◽  
Band Gap ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hot Wire ◽  
Cvd Method ◽  
High Band

NITROGEN INCORPORATED HYDROGENATED AMORPHOUS CARBON THIN FILMS DEPOSITED BY MICROWAVE SURFACE-WAVE PLASMA CHEMICAL VAPOR DEPOSITION

2009 ◽  
Vol 23 (09) ◽  
pp. 2159-2165 ◽  
Author(s):  
SUDIP ADHIKARI ◽  
MASAYOSHI UMENO
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Surface Wave ◽  
Amorphous Carbon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Plasma Chemical ◽  
Hydrogenated Amorphous Carbon ◽  
Plasma Chemical Vapor Deposition ◽  
Hydrogenated Amorphous

Nitrogen incorporated hydrogenated amorphous carbon (a-C:N:H) thin films have been deposited by microwave surface-wave plasma chemical vapor deposition on silicon and quartz substrates, using helium, methane and nitrogen ( N 2) as plasma source. The deposited a-C:N:H films were characterized by their optical, structural and electrical properties through UV/VIS/NIR spectroscopy, Raman spectroscopy, atomic force microscope and current-voltage characteristics. The optical band gap decreased gently from 3.0 eV to 2.5 eV with increasing N 2 concentration in the films. The a-C:N:H film shows significantly higher electrical conductivity compared to that of N 2-free a-C:H film.

The Quality Improvement of Yttrium Oxide Thin Films Grown at Low Temperature via the 3 rd Generation Mist Chemical Vapor Deposition Using Oxygen Supporting Sources

2021 ◽  
Author(s):  
Li Liu ◽  
Toshiyuki Kawaharamura ◽  
Masahito Sakamoto ◽  
Misaki Nishi ◽  
Giang T. Dang ◽  
...  
Keyword(s):  
Thin Films ◽  
Quality Improvement ◽  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Yttrium Oxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Oxide Thin Films

Growth-Temperature Dependent Unpassivated Oxygen Bonds Determine the Gas Sensing Abilities of Chemical Vapor Deposition-Grown CuO Thin Films

2021 ◽  
Author(s):  
Aman Nanda ◽  
Vivek Singh ◽  
Ravindra Kumar Jha ◽  
Jyoti Sinha ◽  
Sushobhan Avasthi ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Growth Temperature ◽  
Vapor Deposition ◽  
Gas Sensing ◽  
Chemical Vapor ◽  
Temperature Dependent

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection
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