Temperature rise and damage morphology of APD in external capacitor circuit irradiated by millisecond pulse laser with different pulse widths

2020 ◽  
Author(s):  
Liang Chen ◽  
Hongxu Liu ◽  
Guangyong Jin ◽  
Di Wang ◽  
Zhi Wei
Keyword(s):  
Pulse Laser ◽  
Temperature Rise ◽  
Damage Morphology ◽  
Millisecond Pulse

scholarly journals Temperature Rise Characteristics of Silicon Avalanche Photodiodes in Different External Capacitance Circuits Irradiated by Infrared Millisecond Pulse Laser

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 866
Author(s):  
Liang Chen ◽  
Zhi Wei ◽  
Di Wang ◽  
Hong-Xu Liu ◽  
Guang-Yong Jin
Keyword(s):  
Surface Temperature ◽  
Pulse Laser ◽  
Temperature Rise ◽  
Infrared Detectors ◽  
Avalanche Photodiodes ◽  
Avalanche Photodiode ◽  
Practical Significance ◽  
Mid Infrared ◽  
Millisecond Pulse ◽  
First Time

We experimentally studied the interaction between a millisecond pulse laser and silicon avalanche photodiode (Si-APD) in an external capacitance circuit. The temperature rise law of Si-APD irradiated by a millisecond pulse laser under different external capacitance conditions was obtained. The results show that the surface temperature rise in a Si-APD is strongly dependent on the external capacitance. That is, the smaller the external capacitance, the smaller the surface temperature rise. The effect of the external capacitance on the surface temperature rise in a Si-APD was investigated for the first time in the field of laser damage. The research results have a certain practical significance for the damage and protection of mid-infrared detectors.

Thermal decomposition damage characteristic in GaAs induced by 0.53 μm millisecond pulse laser

2012 ◽  
Vol 24 (10) ◽  
pp. 2287-2290
Author(s):  
毕娟 Bi Juan ◽  
金光勇 Jin Guangyong ◽  
倪晓武 Ni Xiaowu ◽  
张喜和 Zhang Xihe ◽  
姚志健 Yao Zhijian
Keyword(s):  
Thermal Decomposition ◽  
Pulse Laser ◽  
Millisecond Pulse ◽  
Damage Characteristic

scholarly journals Study on the Internal Mechanism of APD Photocurrent Characteristics Caused by the ms Pulsed Infrared Laser Irradiation

Crystals ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 884
Author(s):  
Liang Chen ◽  
Di Wang ◽  
Guang-Yong Jin ◽  
Zhi Wei
Keyword(s):  
Pulse Laser ◽  
Infrared Laser ◽  
External Circuit ◽  
Recovery Stage ◽  
Millisecond Pulse ◽  
Detection Circuit ◽  
Infrared Laser Irradiation ◽  
Internal Mechanism ◽  
Current Characteristics ◽  
The Time Domain

In this paper, the sampling current characteristics of the external circuit and the internal mechanism of the current generation in APD irradiated by a millisecond pulse laser were studied. The photocurrent of APD irradiated by a millisecond pulse laser with different energy densities was obtained by the sampling resistance of the external circuit. The photocurrent can be divided into a photocurrent stage, conduction stage and recovery stage in the time domain. This is mainly due to the carrier flow in APD, which leads to the lowering of the barrier between the PN junction. The research results of this paper can be extended to the response of the detector to the high-power infrared pulse laser and provide a certain experimental basis for the design of a millisecond pulse infrared laser detection circuit.

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