Performance analysis of multilayer Ge/Si photodetector with quantum dots

2021 ◽  
Author(s):  
Rahaf M. H. Douhan ◽  
Andrey P. Kokhanenko ◽  
Kirill A. Lozovoy
2020 ◽  
Vol 5 (31) ◽  
pp. 9563-9571
Author(s):  
Zhengguang Chen ◽  
Zuowei Zhang ◽  
Hongshun Hao ◽  
Liangliang Zhu ◽  
Chao Ding ◽  
...  

2011 ◽  
Author(s):  
Hongmei Liu ◽  
Fangfang Zhang ◽  
Jianqi Zhang ◽  
Guojing He

Author(s):  
M.J. Kim ◽  
L.C. Liu ◽  
S.H. Risbud ◽  
R.W. Carpenter

When the size of a semiconductor is reduced by an appropriate materials processing technique to a dimension less than about twice the radius of an exciton in the bulk crystal, the band like structure of the semiconductor gives way to discrete molecular orbital electronic states. Clusters of semiconductors in a size regime lower than 2R {where R is the exciton Bohr radius; e.g. 3 nm for CdS and 7.3 nm for CdTe) are called Quantum Dots (QD) because they confine optically excited electron- hole pairs (excitons) in all three spatial dimensions. Structures based on QD are of great interest because of fast response times and non-linearity in optical switching applications.In this paper we report the first HREM analysis of the size and structure of CdTe and CdS QD formed by precipitation from a modified borosilicate glass matrix. The glass melts were quenched by pouring on brass plates, and then annealed to relieve internal stresses. QD precipitate particles were formed during subsequent "striking" heat treatments above the glass crystallization temperature, which was determined by differential thermal analysis.


Sign in / Sign up

Export Citation Format

Share Document