Durability of capped multilayer mirrors for high volume manufacturing extreme ultraviolet lithography tool

2009 ◽  
Author(s):  
S. Matsunari ◽  
Y. Kakutani ◽  
T. Aoki ◽  
S. Kawata ◽  
K. Murakami
Keyword(s):  
Extreme Ultraviolet ◽  
High Volume ◽  
Extreme Ultraviolet Lithography ◽  
Multilayer Mirrors ◽  
Ultraviolet Lithography

Development of element technologies for EUVL

2015 ◽  
Vol 4 (4) ◽  
Author(s):  
Hiroo Kinoshita ◽  
Takeo Watanabe ◽  
Tetsuo Harada
Keyword(s):  
Extreme Ultraviolet ◽  
Random Access ◽  
High Volume ◽  
Development Stage ◽  
Extreme Ultraviolet Lithography ◽  
Applied Physics ◽  
Reflectivity Measurement ◽  
Ultraviolet Lithography ◽  
Mask Inspection ◽  
The University

AbstractThirty years have passed since the first report on extreme ultraviolet lithography (EUVL) was presented at the annual meeting of the Japanese Society of Applied Physics in 1986. This technology is now in the manufacturing development stage. The high-volume manufacturing of dynamic-random-access-memory (DRAM) chips with a line width of 15 nm is expected in 2016. However, there are critical development issues that remain: generating a stand-alone EUV source with a higher power and producing a mask inspection tool for obtaining zero-defect masks. The Center for EUVL at the University of Hyogo was established in 2010. At present, it utilizes various types of equipment, such as an EUV mask defect inspection tool, an interference-lithography system, a device for measuring the thickness of carbon contamination film deposited by resist outgassing, and reflectivity measurement systems.

Inhibition of Contamination of Ru-Capped Multilayer Mirrors for Extreme Ultraviolet Lithography Projection Optics by Ethanol

2007 ◽  
Vol 46 (9B) ◽  
pp. 6155-6160 ◽  
Author(s):  
Yukinobu Kakutani ◽  
Masahito Niibe ◽  
Yoshio Gomei ◽  
Hiromitsu Takase ◽  
Shigeru Terashima ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
Extreme Ultraviolet Lithography ◽  
Multilayer Mirrors ◽  
Ultraviolet Lithography ◽  
Projection Optics

At-Wavelength Extreme Ultraviolet Lithography Mask Observation Using a High-Magnification Objective with Three Multilayer Mirrors

2012 ◽  
Vol 5 (11) ◽  
pp. 112501 ◽  
Author(s):  
Mitsunori Toyoda ◽  
Kenjiro Yamasoe ◽  
Tadashi Hatano ◽  
Mihiro Yanagihara ◽  
Akifumi Tokimasa ◽  
...  
Keyword(s):  
Extreme Ultraviolet ◽  
High Magnification ◽  
Extreme Ultraviolet Lithography ◽  
Multilayer Mirrors ◽  
Ultraviolet Lithography

Photoresists in extreme ultraviolet lithography (EUVL)

2017 ◽  
Vol 6 (3-4) ◽  
Author(s):  
Danilo De Simone ◽  
Yannick Vesters ◽  
Geert Vandenberghe
Keyword(s):  
Extreme Ultraviolet ◽  
High Volume ◽  
The Novel ◽  
Extreme Ultraviolet Lithography ◽  
Material Technology ◽  
Feature Size ◽  
Ultraviolet Lithography ◽  
Photosensitive Material ◽  
Photolithography Process ◽  
Next Generation Lithography

AbstractThe evolutionary advances in photosensitive material technology, together with the shortening of the exposure wavelength in the photolithography process, have enabled and driven the transistor scaling dictated by Moore’s law for the last 50 years. Today, the shortening wavelength trend continues to improve the chips’ performance over time by feature size miniaturization. The next-generation lithography technology for high-volume manufacturing (HVM) is extreme ultraviolet lithography (EUVL), using a light source with a wavelength of 13.5 nm. Here, we provide a brief introduction to EUVL and patterning requirements for sub-0-nm feature sizes from a photomaterial standpoint, discussing traditional and novel photoresists. Emphasis will be put on the novel class of metal-containing resists (MCRs) as well as their challenges from a manufacturing prospective.

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