Investigations of YBa2Cu3O y films sputtered onto a substrate of amorphous quartz with a platinum buffer layer

2017 ◽  
Vol 118 (10) ◽  
pp. 990-996
Author(s):  
Yu. V. Blinova ◽  
O. V. Snigirev ◽  
N. V. Porokhov ◽  
S. A. Evlashin
Keyword(s):  
Buffer Layer ◽  
Amorphous Quartz

In-Situ Study of NiO Growth on Textured Nickel Tape Using Environmental Scanning Electron Microscope (ESEM) and Hot Stage

2001 ◽  
Vol 7 (S2) ◽  
pp. 1276-1277
Author(s):  
Y. Akin ◽  
R.E. Goddard ◽  
W. Sigmund ◽  
Y.S. Hascicek
Keyword(s):  
Buffer Layer ◽  
Lattice Mismatch ◽  
Sol Gel ◽  
Surface Oxidation ◽  
Dip Coating ◽  
Buffer Layers ◽  
Superconducting Film ◽  
Environmental Scanning ◽  
Cold Rolling And Annealing

Deposition of highly textured ReBa2Cu3O7−δ (RBCO) films on metallic substrates requires a buffer layer to prevent chemical reactions, reduce lattice mismatch between metallic substrate and superconducting film layer, and to prevent diffusion of metal atoms into the superconductor film. Nickel tapes are bi-axially textured by cold rolling and annealing at appropriate temperature (RABiTS) for epitaxial growth of YBa2Cu3O7−δ (YBCO) films. As buffer layers, several oxide thin films and then YBCO were coated on bi-axially textured nickel tapes by dip coating sol-gel process. Biaxially oriented NiO on the cube-textured nickel tape by a process named Surface-Oxidation- Epitaxy (SEO) has been introduced as an alternative buffer layer. in this work we have studied in situ growth of nickel oxide by ESEM and hot stage.Representative cold rolled nickel tape (99.999%) was annealed in an electric furnace under 4% hydrogen-96% argon gas mixture at 1050°C to get bi-axially textured nickel tape.

Microcrystalline (Si,Ge):H Solar Cells

2003 ◽  
Vol 762 ◽  
Author(s):  
Jianhua Zhu ◽  
Vikram L. Dalal
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Quantum Efficiency ◽  
Fill Factor ◽  
Open Circuit Voltage ◽  
Defect Density ◽  
Cell Structure ◽  
Open Circuit ◽  
Base Layer ◽  
Ecr Plasma

AbstractWe report on the growth and properties of microcrystalline Si:H and (Si,Ge):H solar cells on stainless steel substrates. The solar cells were grown using a remote, low pressure ECR plasma system. In order to crystallize (Si,Ge), much higher hydrogen dilution (∼40:1) had to be used compared to the case for mc-Si:H, where a dilution of 10:1 was adequate for crystallization. The solar cell structure was of the p+nn+ type, with light entering the p+ layer. It was found that it was advantageous to use a thin a-Si:H buffer layer at the back of the cells in order to reduce shunt density and improve the performance of the cells. A graded gap buffer layer was used at the p+n interface so as to improve the open-circuit voltage and fill factor. The open circuit voltage and fill factor decreased as the Ge content increased. Quantum efficiency measurements indicated that the device was indeed microcrystalline and followed the absorption characteristics of crystalline ( Si,Ge). As the Ge content increased, quantum efficiency in the infrared increased. X-ray measurements of films indicated grain sizes of ∼ 10nm. EDAX measurements were used to measure the Ge content in the films and devices. Capacitance measurements at low frequencies ( ~100 Hz and 1 kHz) indicated that the base layer was indeed behaving as a crystalline material, with classical C(V) curves. The defect density varied between 1x1016 to 2x1017/cm3, with higher defects indicated as the Ge concentration increased.

Study on CexLa1-xO2 Buffer Layer used in Coated Conductors by Chemical Solution Method

2009 ◽  
Vol 24 (6) ◽  
pp. 1201-1204 ◽  
Author(s):  
Yue ZHAO ◽  
Hong-Li SUO ◽  
Jean-Claude GRIVEL ◽  
Shuai YE ◽  
Min LIU ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Solution Method ◽  
Coated Conductors ◽  
Chemical Solution ◽  
Chemical Solution Method

Epitaxial Growth of La2Zr2O7 Buffer Layer on Textured Ni5W Substrate by the Nitrate Route

2011 ◽  
Vol 26 (5) ◽  
pp. 481-485
Author(s):  
Yan-Ling CHENG ◽  
Hong-Li SUO ◽  
Min LIU ◽  
Lin MA ◽  
Teng ZHANG
Keyword(s):  
Epitaxial Growth ◽  
Buffer Layer

Highly Doped Single Walled Carbon Nanotubes Deposited as the Back Buffer Layer on CdTe Devices

2020 ◽  
Author(s):  
Jacob M. Gibbs ◽  
Adam B. Phillips ◽  
Ebin Bastola ◽  
Fadhil K. Alfadhili ◽  
Ramez Hossenian Ahangharnejhad ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Buffer Layer ◽  
Single Walled Carbon Nanotubes ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes
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