HPHT single crystal diamond type IIB growth sector influence on the secondary electron emission phenomenon

2017 ◽  
Vol 11 (5) ◽  
pp. 1101-1107
Author(s):  
V. Sadovoy ◽  
V. Blank ◽  
D. Teteruk ◽  
S. Terentiev ◽  
N. Kornilov
Keyword(s):  
Single Crystal ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Growth Sector ◽  
Single Crystal Diamond ◽  
Diamond Type

scholarly journals CRYSTALLOGRAPHIC ORIENTATION INFLUENCE ON SECONDARY ELECTRON EMISSION COEFFICIENT OF A SINGLE CRYSTAL OF SYNTHETIC DIAMOND

2018 ◽  
Vol 59 (8) ◽  
pp. 21
Author(s):  
Vladimir Yu. Sadovoy ◽  
Vladimir D. Blank ◽  
Sergey A. Terentiev ◽  
Dmitriy V. Teteruk ◽  
Sergey Yu. Troschiev
Keyword(s):  
Single Crystal ◽  
Electron Emission ◽  
Crystallographic Orientation ◽  
Beam Energy ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Primary Beam ◽  
Emission Coefficient ◽  
Secondary Electron Emission Coefficient ◽  
Single Crystal Diamond

Dependence of secondary electron emission coefficient on the chosen crystallographic orientation for a synthetic single crystal diamond of type IIb, grown up by method of a temperature gradient, was investigated. The type IIb of single crystal diamond was chosen because of wide applicability in different areas of microelectronics and the semiconductor properties. Quantitative measurements of secondary electron emission coefficients with energy of primary beam about 7 keV and above for various crystallographic orientations was carried out: the highest coefficient of secondary electronic emission are recorded for the direction (100), cubic sector, and also in intergrowth area that is confirmed by a picture of distribution of the luminescence intensity for various sectors of a single crystal received by means of true secondary electrons detector of scanning electron microscope. The results for (100) area are outstanding: 8.18 at primary beam energy of 7 keV, 10.13 at 10 keV, 49.78 at 30 keV. The results for intergrowth area are similar: 10.10 at primary beam energy of 7 keV, 13.56 at 10 keV, 64.41 at 30 keV. The crystallographic directions (111) have shown secondary electron emission coefficient 4-6 times lower in comparison with (100) and intergrowth area: 2.54 on the average at primary beam energy of 7 keV, 2.75 at 10 keV, 10.03 at 30 keV. The non-standard behavior of secondary electron emission coefficient at the high energy primary beam for all orientations of single crystal diamond is shown: increase in secondary electron emission coefficient with increase in energy of primary beam. At the moment the reason of such behavior is not clear up to the end and since this fact causes a great interest of researchers, considerably expands applicability of the existing devices and detectors due to replacement of a functional element on diamond one, and also opens big opportunities for formation of new field of microelectronics, this facts demand further in-depth study by means of various methods of the structural and surface analysis.

Secondary electron emission coefficient of a MgO single crystal

1999 ◽  
Vol 86 (11) ◽  
pp. 6525-6527 ◽  
Author(s):  
Eun-Ha Choi ◽  
Jae-Yong Lim ◽  
Young-Guon Kim ◽  
Jae-Jun Ko ◽  
Dae-Il Kim ◽  
...  
Keyword(s):  
Single Crystal ◽  
Electron Emission ◽  
Secondary Electron ◽  
Secondary Electron Emission ◽  
Emission Coefficient ◽  
Secondary Electron Emission Coefficient
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