Mechanism of misfit stress relaxation during epitaxial growth of GaN on porous SiC substrates

2006 ◽  
Vol 32 (12) ◽  
pp. 1011-1013
Author(s):  
M. G. Mynbaeva ◽  
O. V. Konstantinov ◽  
K. D. Mynbaev ◽  
A. E. Romanov ◽  
A. A. Sitnikova
Keyword(s):  
Stress Relaxation ◽  
Epitaxial Growth ◽  
Misfit Stress ◽  
Porous Sic

In Situ Measurements of Stress Relaxation During Strained Layer Heteroepitaxy

1999 ◽  
Vol 583 ◽  
Author(s):  
E. Chason ◽  
J. Yin ◽  
K. Tetz ◽  
R. Beresford ◽  
L. B. Freund ◽  
...  
Keyword(s):  
Elevated Temperature ◽  
Stress Relaxation ◽  
Epitaxial Growth ◽  
Real Time ◽  
Misfit Strain ◽  
Misfit Stress ◽  
Relaxation Kinetics ◽  
Substrate Interface ◽  
Temperature Relaxation

AbstractWe present real-time measurements of stress relaxation kinetics during epitaxial growth obtained using a wafer-curvature-based technique optimized for in situ studies. Depending on the temperature and misfit strain, different mechanisms of stress relaxation are observed. In heterolayers of InGaAs grown on GaAs (001) substrates, relaxation occurs by a dislocationmediated mechanism. In SiGe layers grown on Si (001) substrates at elevated temperature, relaxation occurs by the formation of islands on the surface. These islands elastically relax misfit stress without the introduction of dislocations at the island-substrate interface.

Optimal and nonoptimal misfit stress relaxation in a semiconductor heterosystem

2014 ◽  
Vol 78 (4) ◽  
pp. 307-310 ◽  
Author(s):  
E. M. Trukhanov ◽  
A. P. Vasilenko ◽  
I. D. Loshkarev ◽  
A. V. Kolesnikov
Keyword(s):  
Stress Relaxation ◽  
Misfit Stress

Trace analysis of non-basal plane misfit stress relaxation in (202¯1) and (303¯1¯) semipolar InGaN/GaN heterostructures

2012 ◽  
Vol 100 (20) ◽  
pp. 202103 ◽  
Author(s):  
Matthew T. Hardy ◽  
Po Shan Hsu ◽  
Feng Wu ◽  
Ingrid L. Koslow ◽  
Erin C. Young ◽  
...  
Keyword(s):  
Stress Relaxation ◽  
Trace Analysis ◽  
Basal Plane ◽  
Misfit Stress

Characterization of Porous SiC Substrates and of the Epilayer Structures Grown on Them

2002 ◽  
Vol 742 ◽  
Author(s):  
Balaji Raghothamachar ◽  
Jie Bai ◽  
William M. Vetter ◽  
Perena Gouma ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Optical Microscopy ◽  
Epitaxial Growth ◽  
Screw Dislocation ◽  
Pore Morphology ◽  
Porous Substrate ◽  
X Ray ◽  
Porous Sic ◽  
Screw Dislocation Density

ABSTRACTPorous 6H-SiC and 4H-SiC wafers formed by anodization have been characterized in this study prior to and following the CVD deposition of SiC epitaxial layers, using a combination of synchrotron white beam x-ray topography (SWBXT), SEM, TEM and optical microscopy. Under the high temperatures employed during epitaxial growth, a significant change in pore morphology occurs. While no evidence of reduced screw dislocation density in the epilayers is obtained, a small tilt of the epilayers with respect to the porous substrate observed on x-ray topographs could play a role in limiting penetration of defects from the substrate.

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