Characteristics of thin calcium fluoride barrier layers for field-effect transistors and functional electronic devices

2010 ◽  
Vol 36 (5) ◽  
pp. 404-407 ◽  
Author(s):  
Yu. Yu. Illarionov ◽  
M. I. Vexler ◽  
S. M. Suturin ◽  
V. V. Fedorov ◽  
N. S. Sokolov
Keyword(s):  
Calcium Fluoride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Barrier Layers

ON THE DRAIN CURRENT SATURATION IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS

NANO ◽  
2010 ◽  
Vol 05 (03) ◽  
pp. 161-165 ◽  
Author(s):  
A. BENFDILA ◽  
S. ABBAS ◽  
R. IZQUIERDO ◽  
R. TALMAT ◽  
A. VASEASHTA
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Ballistic Transport ◽  
Drain Current ◽  
Functional Behavior ◽  
Current Saturation ◽  
Current Voltage ◽  
Saturation Region ◽  
Current Voltage Characteristics

Electronic devices based on carbon nanotubes (CNTs) show potential for circuit miniaturization due to their superior electrical characteristics and reduced dimensionality. The CNT field effect transistors (CNFETs) offer breakthrough in miniaturization of various electronic circuits. Investigation of ballistic transport governing the operation of CNFETs is essential for understanding the device's functional behavior. This investigation is focused on a study of current–voltage characteristics of device behavior in hard saturation region. The investigation utilizes a set of current–voltage characteristics obtained on typical devices. This work is an extension of our earlier work describing application of our approach to Si -MOSFET behavior in the saturation region.

The Fabrication of High-Speed Electronic Devices by Ion-Beam Synthesis of GexSi1-x Strained Layers

1996 ◽  
Vol 438 ◽  
Author(s):  
R. G. Elliman ◽  
H. Jiang ◽  
W. C. Wong ◽  
P. Kringhøj
Keyword(s):  
Oxidation Rate ◽  
Field Effect ◽  
High Speed ◽  
Materials Science ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Ion Beam ◽  
Electronic Devices ◽  
Solid Phase Epitaxy ◽  
Strained Layers

AbstractGexSi1-x, strained layers can be fabricated by Ge implantation and solid-phase epitaxy and can be used in electronic devices to improve their performance. Several important materials science issues are addressed, including the effect of the strain on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The potential of this process is demonstrated by comparing the performance of metal-oxidesemiconductor field-effect-transistors (MOSFETs) employing ion-beam synthesised GeSi strained layer channel regions with that of Si-only devices.

scholarly journals Procedures and Properties for a Direct Nano-Micro Integration of Metal and Semiconductor Nanowires on Si Chips

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
Dawit Gedamu ◽  
Ingo Paulowicz ◽  
Seid Jebril ◽  
Yogendra Kumar Mishra ◽  
Rainer Adelung
Keyword(s):  
Thin Film ◽  
Electrical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
Semiconductor Nanowires ◽  
Semiconductor Nanostructures ◽  
Wafer Level ◽  
Vapor Liquid Solid ◽  
Micro Structures

1-dimensional metal and semiconductor nanostructures exhibit interesting physical properties, but their integration into modern electronic devices is often a very challenging task. Finding the appropriate supports for nanostructures and nanoscale contacts are highly desired aspects in this regard. In present work we demonstrate the fabrication of 1D nano- and mesostructures between microstructured contacts formed directly on a silicon chip either by a thin film fracture (TFF) approach or by a modified vapor-liquid-solid (MVLS) approach. In principle, both approaches offer the possibilities to integrate these nano-meso structures in wafer-level fabrications. Electrical properties of these nano-micro structures integrated on Si chips and their preliminary applications in the direction of sensors and field effect transistors are also presented.

Interfacing Biology with Electronic Devices

2005 ◽  
Vol 108-109 ◽  
pp. 789-796 ◽  
Author(s):  
Andreas Offenhäusser ◽  
Sven Ingebrandt ◽  
Dirk Mayer
Keyword(s):  
Tissue Culture ◽  
Information Processing ◽  
Molecular Biology ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
The Other ◽  
Pharmacological Effects ◽  
Distributed Information ◽  
Microelectronic Devices

Due to a number of advances in molecular biology, cell and tissue culture in combination with more sensitive methods to transduce biological signals, it has become increasingly feasible to detect unknown toxicity or pharmacological effects by using biological systems which are electrically coupled to micro- or nanoelectrodes or field-effect transistors (FETs). The coupling of biomolecules with electronic devices is demonstrated. In order to identify the contributions of the various cell signals we have investigated the coupling of cardiac myocytes with FETs. On the other side such systems can also be used to study the very basics of distributed information processing by interfacing cultured neuronal networks with microelectronic devices.

Ultrathin calcium fluoride insulators for two-dimensional field-effect transistors

2019 ◽  
Vol 2 (6) ◽  
pp. 230-235 ◽  
Author(s):  
Yury Yu. Illarionov ◽  
Alexander G. Banshchikov ◽  
Dmitry K. Polyushkin ◽  
Stefan Wachter ◽  
Theresia Knobloch ◽  
...  
Keyword(s):  
Calcium Fluoride ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Two Dimensional

Dirac-source field-effect transistors as energy-efficient, high-performance electronic switches

Science ◽  
2018 ◽  
Vol 361 (6400) ◽  
pp. 387-392 ◽  
Author(s):  
Chenguang Qiu ◽  
Fei Liu ◽  
Lin Xu ◽  
Bing Deng ◽  
Mengmeng Xiao ◽  
...  
Keyword(s):  
Energy Efficient ◽  
Field Effect ◽  
Electron Density Distribution ◽  
High Performance ◽  
Room Temperature ◽  
Supply Voltage ◽  
Field Effect Transistors ◽  
State Of The Art ◽  
Electronic Devices ◽  
Electronic Switches

An efficient way to reduce the power consumption of electronic devices is to lower the supply voltage, but this voltage is restricted by the thermionic limit of subthreshold swing (SS), 60 millivolts per decade, in field-effect transistors (FETs). We show that a graphene Dirac source (DS) with a much narrower electron density distribution around the Fermi level than that of conventional FETs can lower SS. A DS-FET with a carbon nanotube channel provided an average SS of 40 millivolts per decade over four decades of current at room temperature and high device current I60 of up to 40 microamperes per micrometer at 60 millivolts per decade. When compared with state-of-the-art silicon 14-nanometer node FETs, a similar on-state current Ion is realized but at a much lower supply voltage of 0.5 volts (versus 0.7 volts for silicon) and a much steeper SS below 35 millivolts per decade in the off-state.

GENERATION-RECOMBINATION NOISE IN GaN-BASED DEVICES

2004 ◽  
Vol 14 (01) ◽  
pp. 175-195 ◽  
Author(s):  
SERGEY L. RUMYANTSEV ◽  
NEZIH PALA ◽  
MICHAEL. S. SHUR ◽  
MICHAEL E. LEVINSHTEIN ◽  
REMIS GASKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Activation Energy ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Activation Energies ◽  
Barrier Layers ◽  
Algan Barrier ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure ◽  
Local Levels

AlGaN thin films and Schottky barrier Al 0.4 Ga 0.6 N diodes exhibit generation-recombination (GR) noise with activation energies of 0.8 - 1 eV. GR noise in AlGaN / GaN Heterostructure Field Effect transistors (HFETs) corresponds to activation energies in the range from 1 - 3 meV to 1 eV. No GR noise is observed in thin doped GaN films and GaN MESFETs. GR noise with the largest reported activation energy of 1.6 eV was measured in AlGaN / InGaN / GaN Double Heterostructure Field Effect Transistors (DHFETs). Local levels responsible for the GR noise in HFETs and DHFETs might be located in AlGaN barrier layers.

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