OPTICAL ABSORPTION SPECTRA OF ARSENIC AND PHOSPHORUS IN SILICON

1962 ◽  
Vol 40 (10) ◽  
pp. 1480-1489 ◽  
Author(s):  
J. W. Bichard ◽  
J. C. Giles
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Excited States ◽  
Ground State ◽  
Absorption Lines ◽  
Full Width ◽  
Optical Absorption Spectra ◽  
Phosphorus Impurity ◽  
Line Widths ◽  
Phosphorus In Silicon

The optical absorption spectra of arsenic and phosphorus donor impurities in silicon have been studied under conditions of improved resolution. Absorption lines due to transitions from the impurity ground state to the excited states 2p0, 2p±, 3p0, 3p±, 4p0, 4 p±, and 5p0, and 5p± have been observed at 4.2° K. The relative intensities of some of these absorption lines are compared with existing experimental and theoretical estimates. The contribution of instrumental broadening to the observed line widths is assessed and natural line widths are estimated. The estimates indicate values for the natural line widths which are much less than those previously reported. For phosphorus impurity, the natural line widths are estimated to be less than 0.08 × 10−3 electron volts full width at half-maximum. The possibility of concentration broadening is discussed in connection with the arsenic data.

Optical absorption spectra of octahedrally bonded Fe3+ in vesuvianite

1968 ◽  
Vol 5 (1) ◽  
pp. 89-92 ◽  
Author(s):  
P. G. Manning
Keyword(s):  
Optical Absorption ◽  
Energy Range ◽  
Absorption Spectra ◽  
Excited States ◽  
Ground State ◽  
Electronic Transitions ◽  
Optical Absorption Spectra ◽  
Sharp Band ◽  
Individual Bands ◽  
The Individual

The optical absorption spectra of green vesuvianite crystals from Lowell County, Vermont, are reported in the energy range 12 000 cm−1 to 30 000 cm−1. The principal absorptions have been attributed to octahedrally bonded Fe3+ and the individual bands have been assigned to spin-forbidden electronic transitions from the 6A1 ground state to excited states in Fe3+. In particular, the 6A1 → 4A14E(G) transition is marked by a relatively sharp band at 21 600 cm−1.

A photoconductivity study of trapped electrons in γ-irradiated hydrocarbon glasses at 77 K

1983 ◽  
Vol 61 (12) ◽  
pp. 2799-2803 ◽  
Author(s):  
Naoto Okabe ◽  
Toyoaki Kimura ◽  
Kenji Fueki
Keyword(s):  
Optical Absorption ◽  
Absorption Spectra ◽  
Conduction Band ◽  
Ground State ◽  
Volume Ratio ◽  
Optical Absorption Spectra ◽  
Trapped Electrons ◽  
Trapped Electron

Photoconductivity spectra of trapped electrons in γ-irradiated 3-methylpentane, 2-methylpentane, 3-methylheptane, and 3-methylpentane–methylcyclohexane (1:9 volume ratio) glasses at 77 K were measured. From the comparison of photoconductivity and optical absorption spectra in these systems we have obtained relative values of quantum efficiencies for a trapped electron in the ground state to be excited to the conduction band by photo-induced transition. For electrons stably trapped, we have measured the ranges of trap depths from the shallowest to the deepest in these systems.

Formation Energy of Interstitial Si in Au-Doped Si

1998 ◽  
Vol 510 ◽  
Author(s):  
Masashi Suezawa
Keyword(s):  
High Temperature ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Absorption Spectra ◽  
Formation Energy ◽  
Hydrogen Atmosphere ◽  
Absorption Lines ◽  
Optical Absorption Spectra ◽  
Vapor Method

AbstractIn this report, we proposed that complexes responsible for optical absorption lines in Si grown in a hydrogen (H) atmsophere were composed of interstitial Si and H atoms and then determined the formation energy of interstitial Si in Au-doped Si from the measurements of optical absorption due to H bound to interstitial Si. In the first experiment, specimens were grown in a hydrogen atmosphere. In the second experiment, Si crystals were doped with Au by a vapor method; namely, specimens were sealed in quartz capsules together with a piece of Au wire and then annealed at high temperature followed by quenching in water. Then the specimens were doped with H by annealing them in hydrogen atmosphere of 1 atm. followed by quenching. We measured optical absorption of those specimens. From the effect of impurity on the optical absorption spectra of Si grown in a hydrogen atmosphere, we concluded that those optical absorption lines, including 2223 cm−1line, were due to complexes of interstitial Si and H. From the temperature dependence of the intensity of 2223 cm−1line, the formation energy of interstitial Si in Au-doped Si was determined to be about 2.1 eV

EXAFS Studies on the Structure of Photoexcited Cyclopentadienylnickelnitrosyl(C5H5NiNO)

1993 ◽  
Vol 307 ◽  
Author(s):  
Lin X. Chen ◽  
Michael K. Bowman ◽  
Pedro A. Montano ◽  
James R. Norris
Keyword(s):  
Electron Transfer ◽  
Data Analysis ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Ground State ◽  
Photochemical Reaction ◽  
Exafs Spectroscopy ◽  
Intramolecular Electron Transfer ◽  
Optical Absorption Spectra ◽  
Exafs Data

ABSTRACTThe structures of C5H5NiNO in a reversible photochemical reaction were studied via EXAFS, FTIR, and optical absorption spectroscopies. A photoexcited intermediate with distinctively different EXAFS, IR, and optical absorption spectra from those of the ground state molecules was generated upon irradiation using 365 nm light at 20K in a 3-methylpentane solution. The reverse reaction was induced by irradiation with 310 nm light. The EXAFS data analysis has shown a 0. 12 Å elongation of the Ni-N bond and the bending of Ni-N-O in the photoexcited intermediate. Several ZINDO calculations were conducted based on the structures obtained from the EXAFS spectroscopy. These calculations reproduced the changes in the optical spectra and the intramolecular electron transfer in C5H5NiNO.

scholarly journals Fast optical absorption spectra calculations for periodic solid state systems

2020 ◽  
Vol 15 (1) ◽  
pp. 89-113
Author(s):  
Felix Henneke ◽  
Lin Lin ◽  
Christian Vorwerk ◽  
Claudia Draxl ◽  
Rupert Klein ◽  
...  
Keyword(s):  
Solid State ◽  
Optical Absorption ◽  
Absorption Spectra ◽  
Optical Absorption Spectra
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