TCAD SIMULATION AND PERFORMANCE ANALYSIS OF SINGLE AND DUAL GATE OTFTs

2019 ◽  
Vol 27 (05) ◽  
pp. 1950145 ◽  
Author(s):  
A. D. D. DWIVEDI ◽  
POOJA KUMARI
Keyword(s):  
Performance Analysis ◽  
Computer Aided Design ◽  
Simulation Software ◽  
Electrical Characteristics ◽  
Organic Thin Film ◽  
Dual Gate ◽  
Tcad Simulation ◽  
Numerical Device ◽  
And Performance ◽  
Aided Design

This paper presents finite element-based numerical simulation and performance analysis of dual and single gate pentacene-based organic thin film transistors (OTFTs) using technology computer-aided design (TCAD) tools. Electrical characteristics of the devices have been simulated using 2D numerical device simulation software ATLAS™ from Silvaco International. Also, device parameters like threshold voltage, mobility, transconductance, subthreshold swing and current on/off ratio of the single and dual gate OTFTs have been extracted and compared.

scholarly journals Improvement in Turn-Off Loss of the Super Junction IGBT with Separated n-Buffer Layers

Micromachines ◽  
2021 ◽  
Vol 12 (11) ◽  
pp. 1422
Author(s):  
Ki-Yeong Kim ◽  
Joo-Seok Noh ◽  
Tae-Young Yoon ◽  
Jang-Hyun Kim
Keyword(s):  
Breakdown Voltage ◽  
Computer Aided Design ◽  
Buffer Layers ◽  
Simulation Tool ◽  
Electrical Characteristics ◽  
Insulated Gate Bipolar Transistor ◽  
Computer Aided ◽  
Long Time ◽  
Tcad Simulation ◽  
Aided Design

In this study, we propose a super junction insulated-gate bipolar transistor (SJBT) with separated n-buffer layers to solve a relatively long time for carrier annihilation during turn-off. This proposition improves the turn-off characteristic while maintaining similar on-state characteristics and breakdown voltage. The electrical characteristics of the devices were simulated by using the Synopsys Sentaurus technology computer-aided design (TCAD) simulation tool, and we compared the conventional SJBT with SJBT with separated n-buffer layers. The simulation tool result shows that turn-off loss (Eoff) drops by about 7% when on-state voltage (Von) and breakdown voltage (BV) are similar. Von increases by about 0.5% and BV decreases by only about 0.8%.

Computer-aided design and optimization of centrifugal pumps

2005 ◽  
Vol 219 (3) ◽  
pp. 187-193 ◽  
Author(s):  
M Asuaje ◽  
F Bakir ◽  
S Kouidri ◽  
R Noguera ◽  
R Rey
Keyword(s):  
Performance Analysis ◽  
Computer Aided Design ◽  
Fluid Dynamic ◽  
Three Dimensional ◽  
Centrifugal Pumps ◽  
Design And Optimization ◽  
Design Software ◽  
And Performance ◽  
Aided Design ◽  
Physical Phenomena

Improvement in computer power and the development of numerical computational methods over the last few years have allowed the emergence of computational fluid dynamic (CFD) codes, making possible the numerical simulation of flow and energy transfer in turbomachines. To improve the efficiency of these tools, fast design software must be used. Within the framework of the optimization process of centrifugal pumps, HELIOX software was developed. It is a tool for design and performance analysis of centrifugal pumps. HELIOX allows quick design of new pumps and improvement of existing ones. HELIOX's performance analysis has been validated through many industrial cases: approximately 100 machines of different sizes and mechanical power. Heliox can be linked to quasi-and three-dimensional analysis tools; these tools enable a better understanding of physical phenomena so as to control the flow fields inside pumps.

scholarly journals Analysis of Electrical Characteristics in 4H-SiC Trench-Gate MOSFETs with Grounded Bottom Protection p-Well Using Analytical Modeling

2021 ◽  
Vol 11 (24) ◽  
pp. 12075
Author(s):  
Jee-Hun Jeong ◽  
Ogyun Seok ◽  
Ho-Jun Lee
Keyword(s):  
Analytical Model ◽  
Computer Aided Design ◽  
Analytical Modeling ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Electrical Characteristics ◽  
Reverse Transfer ◽  
Tcad Simulation ◽  
Switching Characteristics ◽  
Aided Design

A new analytical model to analyze and optimize the electrical characteristics of 4H-SiC trench-gate metal-oxide-semiconductor field-effect transistors (TMOSFETs) with a grounded bottom protection p-well (BPW) was proposed. The optimal BPW doping concentration (NBPW) was extracted by analytical modeling and a numerical technology computer-aided design (TCAD) simulation, in order to analyze the breakdown mechanisms for SiC TMOSFETs using BPW, while considering the electric field distribution at the edge of the trench gate. Our results showed that the optimal NBPW obtained by analytical modeling was almost identical to the simulation results. In addition, the reverse transfer capacitance (Cgd) values obtained from the analytical model correspond with the results of the TCAD simulation by approximately 86%; therefore, this model can predict the switching characteristics of the effect BPW regions.

scholarly journals Simulation of FDSOI-ISFET with Tunable Sensitivity by Temperature and Dual-Gate Structure

Electronics ◽  
2021 ◽  
Vol 10 (13) ◽  
pp. 1585
Author(s):  
Hanbin Wang ◽  
Jinshun Bi ◽  
Mengxin Liu ◽  
Tingting Han
Keyword(s):  
Gate Voltage ◽  
Computer Aided Design ◽  
Silicon On Insulator ◽  
Fully Depleted ◽  
Gate Structure ◽  
Different Temperatures ◽  
Dual Gate ◽  
Sensitivity Changes ◽  
Increasing Temperature ◽  
Aided Design

This work investigates the different sensitivities of an ion-sensitive field-effect transistor (ISFET) based on fully depleted silicon-on-insulator (FDSOI). Using computer-aided design (TCAD) tools, the sensitivity of a single-gate FDSOI based ISFET (FDSOI-ISFET) at different temperatures and the effects of the planar dual-gate structure on the sensitivity are determined. It is found that the sensitivity increases linearly with increasing temperature, reaching 890 mV/pH at 75 °C. By using a dual-gate structure and adjusting the control gate voltage, the sensitivity can be reduced from 750 mV/pH at 0 V control gate voltage to 540 mV/pH at 1 V control gate voltage. The above sensitivity changes are produced because the Nernst limit changes with temperature or the electric field generated by different control gate voltages causes changes in the carrier movement. It is proved that a single FDSOI-ISFET can have adjustable sensitivity by adjusting the operating temperature or the control gate voltage of the dual-gate device.

Design and Fabrication of Stirling Engine for Solar Power Application

2021 ◽  
Vol 143 (11) ◽  
Author(s):  
Muhammad Hassan ◽  
Hussain Ahmed Tariq ◽  
Muhammad Anwar ◽  
Talha Irfan Khan ◽  
Asif Israr
Keyword(s):  
Computer Aided Design ◽  
Peak Power ◽  
Stirling Engine ◽  
Working Fluid ◽  
Cad Model ◽  
Stroke Length ◽  
And Performance ◽  
Power Application ◽  
Aided Design ◽  
Alpha Type

Abstract This paper showcases the designing, fabrication, and performance evaluation of 90-deg alpha-type Stirling engine. The diameters of the hot and cold cylinder are 50 mm and 44 mm, respectively, with a stroke length of 70 mm. The computer-aided design (CAD) model is developed by keeping in mind the ease of manufacturing, maintenance, bearing replacements, and lubrication. After fabrication, the engine is tested by heating the hot cylinder with air as a working fluid. The engine delivered peak power of 155 watts at the temperature of 1123 K and 968 K for hot and cold cylinders, respectively. This developed prototype can be commissioned with the solar parabolic concentrator in the future based on the smooth operation while delivering power.

Improving creative self-efficacy and performance through computer-aided design application

2019 ◽  
Vol 31 ◽  
pp. 103-111 ◽  
Author(s):  
Yu-shan Chang ◽  
Mavis Yi-Ching Chen ◽  
Meng-Jung Chuang ◽  
Chia-hui Chou
Keyword(s):  
Self Efficacy ◽  
Computer Aided Design ◽  
Computer Aided ◽  
And Performance ◽  
Creative Self ◽  
Aided Design

VESPER: Visual Exploration of Similarity and Performance Metrics for Computer-Aided Design Repositories

2018 ◽  
Author(s):  
Devarajan Ramanujan ◽  
William Z. Bernstein
Keyword(s):  
Visual Analytics ◽  
Computer Aided Design ◽  
Performance Metrics ◽  
External Validation ◽  
Visual Exploration ◽  
Similarity Metrics ◽  
Report Generation ◽  
Computer Aided ◽  
And Performance ◽  
Aided Design

VESPER (Visual Exploration of Similarity and PERformance) is a visual analytics system for exploring similarity metrics and performance metrics derived from computer-aided design (CAD) repositories. It consists of (1) a data processing module that allows analysts to input custom similarity metrics and performance metrics, (2) a visualization module that facilitates navigation of the design spaces through coordinated, interactive visualizations, and (3) a report generation module that allows analysts to export lifecycle data of selected repository items as well as the input metrics for further external validation. In this paper, we discuss the need, design rationale, and implementation details for VESPER. We then apply VESPER to (1) sustainability-focused exploration of parts, and (2) exploration of tool wear and surface roughness in machined parts.

Optimization of Preform for Stub Axle Forging Using Simulation Software

2021 ◽  
Vol 1016 ◽  
pp. 1337-1343
Author(s):  
T. Lachana Dora ◽  
Niranjan Kumar Singh ◽  
Rajkumar Ohdar
Keyword(s):  
Computer Aided Design ◽  
Simulation Software ◽  
Die Design ◽  
Design And Manufacturing ◽  
Cad Cam ◽  
Increase Productivity ◽  
Aided Design ◽  
Preform Shape ◽  
Deform 3D ◽  
Made In

There is a growing demand for more efficient and economic manufacturing process to improve product quality, reduce production cost, reduce lead time and increase productivity. The application of computer aided design and manufacturing (CAD/CAM) techniques to forging is becoming increasingly popular as the resulting improvements in yield and productivity. Modeling and simulation have become a major concern in recent and advanced research. In this paper die design for forging of an automobile component “Stub Axle” is presented. In die forging process, complex shape component cannot be made in one stage and therefore, the use of preform die becomes essential. The initial preform design was carried out by conventional method. The simulation has been carried out using software DEFORM-3D. The main goal of this study is to design an optimal preform shape resulting an optimal initial billet selection. Keywords:CAD/CAM, Preform, DEFORM-3D, Simulation, Forging

scholarly journals A New Read Scheme for Alleviating Cell-to-Cell Interference in Scaled-Down 3D NAND Flash Memory

Electronics ◽  
2020 ◽  
Vol 9 (11) ◽  
pp. 1775
Author(s):  
Jae-Min Sim ◽  
Myounggon Kang ◽  
Yun-Heub Song
Keyword(s):  
Electric Field ◽  
Flash Memory ◽  
Computer Aided Design ◽  
Fundamental Problem ◽  
Adjacent Cell ◽  
Nand Flash ◽  
Nand Flash Memory ◽  
Fundamental Cause ◽  
Tcad Simulation ◽  
Aided Design

In this paper, we investigated the cell-to-cell interference in scaled-down 3D NAND flash memory by using a Technology Computer-Aided Design (TCAD) simulation. The fundamental cause of cell-to-cell interference is that the electric field crowding point is changed by the programmed adjacent cell so that the electric field is not sufficiently directed to the channel surface. Therefore, the channel concentration of the selected cell is changed, leading to a Vth shift. Furthermore, this phenomenon occurs more severely when the selected cell is in an erased state rather than in a programmed state. In addition, it was confirmed that the cell-to-cell interference by the programmed WLn+1 is more severe than that of WLn−1 due to the degradation of the effective mobility effect. To solve this fundamental problem, a new read scheme is proposed. Through TCAD simulation, the cell-to-cell interference was alleviated with a bias having a ΔV of 1.5 V from Vread through an optimization process to have appropriate bias conditions in three ways that are suitable for each pattern. As a result, this scheme narrowed the Vth shift of 67.5% for erased cells and narrowed the Vth shift of 70% for programmed cells. The proposed scheme is one way to solve the cell-to-cell interference that may occur as the cell-to-cell distance decreases for a high stacked 3D NAND structure.

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