Nanostructured phothocatalytic TiO2 thin film fabricated by magnetron sputtering on glass

2012 ◽  
Vol 05 ◽  
pp. 661-669 ◽  
Author(s):  
BAHRAM ABDOLLAHI NEJAND ◽  
SOHRAB SANJABI ◽  
VAHID AHMADI

TiO 2 thin film was deposited by a DC reactive magnetron sputtering on ZnO /soda-lime glass substrate and single crystal SiO 2 below 200 °C. ZnO layer was used as a buffer layer. Deposition was performed at Ar + O 2 gas mixture with a pressure of 1.0 Pa and oxygen with a constant pressure of 0.2 Pa. The TiO 2 / ZnO thicknesses were approximately 1000 nm and 80 nm, respectively. As-deposited films were annealed at 400 °C. The structure and morphology of deposited layers were evaluated by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The transmittance of the films was measured using ultraviolet–visible light (UV–vis) spectrophotometer. Photocatalytic activities of the samples were evaluated by the degradation of 2-propanol. The microstructure of annealed films was anatase, having improved photocatalytic activity. The surface grain size of TiO 2 thin film after annealing was found about 25-35 nm and crystal size was approximately 8 nm. By using ZnO thin film as buffer layer, the photocatalytic property of TiO 2 films was improved.

2010 ◽  
Vol 24 (31) ◽  
pp. 3033-3040 ◽  
Author(s):  
C. W. CHEN ◽  
C. H. TSENG ◽  
C. Y. HSU ◽  
C. P. CHOU ◽  
K. H. HOU

Al 2 O 3-doped zinc oxide (in AZO, the Al 2 O 3 contents are approximately 2 wt.%) films have been grown by radio frequency (RF) magnetron sputtering at room temperature under varied sputtering pressures ranging from 3.5–15 mTorr. The electrical resistivity of AZO films is about 2.22×10-3 Ωcm (sheet resistance ~ 89 Ω/square for a thickness ~ 250 nm), and the visible range transmittance is about 80% at the argon sputtering pressure of 15 mTorr and a RF power of 100 W. This study analyzes the structural, morphological, electrical and optical properties of AZO thin films grown on soda-lime glass substrate with 2, 5, and 10 nm thick Al buffer layers (and SiO 2 buffer). For the films deposited on the 2 nm thick Al buffer layer, we obtained a c-axis-oriented AZO/ Al thin film on glass with the XRD full-width at half maximum (FWHM) of 0.31 and root mean square (RMS) surface roughness of about 3.22 nm. The lowest resistivity of 9.46×10-4 Ωcm (sheet resistance ~ 37.87 Ω/square for a thickness ~ 250 nm) and a high transmittance (80%) were obtained by applying a 2 nm thick Al buffer layer. In contrast, the resistivity was slightly increased by applying the SiO 2 buffer layer.


2008 ◽  
Vol 1123 ◽  
Author(s):  
Shou-Yi Kuo ◽  
Liann-Be Chang ◽  
Ming-Jer Jeng ◽  
Wei-Ting Lin ◽  
Yong-Tian Lu ◽  
...  

AbstractThis work reports on the fabrication and characterization of Mo thin films on soda-lime glass substrate grown by reactive RF magnetron sputtering. Film thickness was measured by x-ray step surface profiler. The structural properties and surface morphology were analyzed by x-ray diffraction (XRD), atomic force microscope (AFM) and scanning electron microscopy (SEM). Electrical properties were measured by four-point probe. It was found that the growth parameters, such as argon flow rate, RF power, film thickness, have significant influences on properties of Mo films. The strain on films revealed the complicated relationship with the working pressure, which might be associated with micro structures and impurities. In order to improve the adhesion and electricity, we adopted a two-pressure deposition scheme. The optimal thickness and sheet resistance are νm and 0.12 ω The mechanisms therein will be discussed in detail. Furthermore, we also investigated the diffusion property of Na ion of double Mo films sputtered on soda-lime glass. Our experimental results could lead to better understanding for improving further CIGS-based photovoltaic devices.


Author(s):  
Mohammad Shah Jamal ◽  
M.S. chowdhury ◽  
Saraswati Bajgai ◽  
M Hossain ◽  
A. Laref ◽  
...  

Abstract The structural and optical characteristics of Nickel oxide thin films (NiOTF) formed on the soda-lime glass substrate (SLG) under vacuum and non-vacuum conditions are investigated in this work. The difference between RFMS (Radio Frequency Magnetron Sputtering; vacuum) and SP (spray pyrolysis; non-vacuum) was helpful in the development of NiOTF. Deposited films data for this study were characterized by using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), scanning probe microscopy (SPM), and optical spectrophotometer. Structural studies disclosed that NiOTF developed via RFMS technique was more uniform with large crystals and lower surface roughness in contrast to that of developed via SP technique. Transmittance spectrum divulged that the transmittance of spray pyrolyzed NiO films are ~10% less than that of ones produced by RFMS. Urbach energy analysis of NiOTF developed by RFMS and SP affirmed the findings of structural studies.


2009 ◽  
Vol 1165 ◽  
Author(s):  
Hironori Katagiri ◽  
Kazuo Jimbo ◽  
Masami Tahara ◽  
Hideaki Araki ◽  
Koichiro Oishi

AbstractCu2ZnSnS4 (CZTS) thin films were fabricated by using three RF co-sputtering continued with sulfurization method. The new type of thin film solar cells using CZTS as an absorber consists of buffer-layer and window-layer on CZTS films that were fabricated on a Mo-coated Soda Lime Glass (SLG) substrate. It was confirmed that CZTS solar cells with high conversion efficiency existed in a relatively narrow composition region. In this paper, the fabrication method of CZTS-based thin film solar cells in our laboratory was stated briefly and the influence of the composition ratio on the photovoltaic properties were presented. Furthermore, the properties of a genuine non-toxic solar cell using a Cd-free buffer-layer were introduced.


2001 ◽  
Vol 697 ◽  
Author(s):  
Hisayuki Suematsu ◽  
Tsuyoshi Saikusa ◽  
Tsuneo Suzuki ◽  
Weihua Jiang ◽  
Kiyoshi Yatsui

AbstractThin films of titanium iron (TiFe) were prepared by a pulsed ion-beam evaporation (IBE) method. A pulsed ion beam of proton accelerated at 1 MV (peak) with a pulse width of 50 ns and a current of 70 kA was focused on TiFe alloy targets. Soda lime glass substrates were placed in front of the targets. Phases in the thin films were identified by X-ray diffraction (XRD). XRD results revealed that the thin films deposited on the glass substrates consist of a TiFe phase. Crystallized Ti-Fe thin films without oxides were successfully obtained. Surface roughness of the thin film was 0.16 m m.


2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Abdalla A. Alnajjar

Al-doped ZnO thin films were deposited from two different targets. Ceramic targets were used in RF magnetron sputtering, whereas pulsed magnetron sputtering was used to grow films from powder targets. ZnO:Al films with different thicknesses were sputtered directly on soda-lime glass substrates. The film thickness was in the 0.04–2.0 μm range. The microstructure, such as the grain size and the texture, of the two differently grown ZnO:Al transparent conductive oxide films of different thickness, was studied using X-ray diffractionθ/2θscans. The optical properties, such as the transmittance and reflectance, were measured using a UV-Vis-NIR spectrometer. Further, the sheet resistance, resistivity, carrier concentration, and Hall mobility of these ZnO:Al thin films were measured as a function of film thickness. These results obtained from the two different deposition techniques were compared and contrasted.


Author(s):  
A. O. Musa ◽  
A. B. Ahmed ◽  
Mansur Said ◽  
Mani Tsoho ◽  
A. B. Suleiman

Fluorine doped tin oxide, Cadmium Sulphide  and Cadmium Telluride  thin films have been deposted on Soda Lime glass substrate at  respectively by spray pyrolysis (SP) technique and are important semiconductor materials in optoelectronic devices such as optical sensors, light-emitting diodes, transistors and photovoltaic cells.  thin films were characterized by various techniques such as X-ray diffraction, SEM and optical studies. X-ray diffraction measurements show that the deposited   was found to be of cassiterite type with tetragonal rutile structure, observation of peaks of different planes on an X-ray diffraction graph of  thin film showed that  film obtained were cubic structure. The main peak value of  thin film is seen at , which is the characteristic peak of the  compound  and the  film structure was obtained at the major peak  indicating the preferred orientation of  films along  direction. This confirms the formation of  thin film, with (111) as the strongest preferred plane of orientation. The surface morphology of the thin films was analysed by scanning electron microscopy (SEM). The optical energy band gap of thin films are determine  The results showed that the prepared FTO, CdS and CdTe films can be used in solar energy applications.


1996 ◽  
Vol 426 ◽  
Author(s):  
V. Probst ◽  
F. Karg ◽  
J. Rimmasch ◽  
W. Riedl ◽  
W. Stetter ◽  
...  

AbstractTargeting large area and low cost processing of highly efficient thin film solar modules an advanced stacked elemental layer process for Cu(InGa)Se2 (CIGS) thin films is presented. Key process steps are i) barrier coating of the soda lime glass substrate combined with the addition of a sodium compound to the elemental Cu/In/Ga/Se-precursor stack and ii) rapid thermal processing (RTP) to form the CIGS compound.By this strategy exact impurity control is achieved and the advantageous influence of sodium on device performance and on CIGS film formation is demonstrated unambiguously by means of electrical characterisation, XRD, SEM, TEM and SIMS. Sodium enriched and sodium free precursor stacks were heated to intermediate states (300°C–500°C) of the RTPreaction process. The experiment clearly reveals that on the reaction pathway to the chalcopyrite semiconductor increased amounts of copper-selenide are formed, if sodium is added to the precursor films. TEM-electron diffraction unambiguously identifies the CuSe-phase which is localised at the surface of the forming CIGS-film. These experimental findings propose a sodium assisted quasi liquid growth model for the CIS formation taking into account that sodium promotes the existence of CuSe at higher temperatures and its effect as a flux agent. The model contributes to a better understanding of the observed superior crystal qualitiy for sodium enriched in contrast to sodium free CIGS films.Application of these experimental findings in the technique of the optimized and controlled sodium incorporation significantly improves process reproducibility, CIGS film homogenity over larger substrate areas and shifts the average efficiency of cells and modules to a significantly higher level. This is demonstrated by a 12-cell integrated series connected minimodule with an aperture area of 51 cm2 and a confirmed efficiency of 11.75 %.


2017 ◽  
Vol 2017 ◽  
pp. 1-7
Author(s):  
William Vallejo ◽  
Carlos Diaz-Uribe ◽  
G. Gordillo

In this work, we fabricated system In(O,OH)S/i-ZnO/n+-ZnO to be used as potential optical window in thin films solar cells. i-ZnO/n+-ZnO thin films were synthesized by reactive evaporation (RE) method and In(O,OH)S thin films were synthesized by chemical bath deposition (CBD) method; all thin films were deposited on soda lime glass substrates. Thin films were characterized through X-ray diffraction (XRD), atomic force microscopy (AFM), and spectral transmittance measurements. Structural results indicated that both thin films were polycrystalline; furthermore, morphological results indicated that both thin films coated uniformly soda lime glass substrate; besides, optical characterization indicated that system had more than 80% of visible radiation transmittance.


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