Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors

Tohru Suzuki; Yukio Osaka; Masataka Hirose

doi:10.1143/jjap.21.l159

Theoretical Interpretations of the Gap State Density Determined from the Field Effect and Capacitance-Voltage Characteristics of Amorphous Semiconductors

Japanese Journal of Applied Physics ◽

10.1143/jjap.21.l159 ◽

1982 ◽

Vol 21 (Part 2, No. 3) ◽

pp. L159-L161 ◽

Cited By ~ 45

Author(s):

Tohru Suzuki ◽

Yukio Osaka ◽

Masataka Hirose

Keyword(s):

Field Effect ◽

State Density ◽

Amorphous Semiconductors ◽

Capacitance Voltage ◽

Gap State

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Analysis of field-effect and capacitance–voltage measurements in amorphous semiconductors

Philosophical Magazine B ◽

10.1080/01418638008225645 ◽

1980 ◽

Vol 42 (1) ◽

pp. 149-165 ◽

Cited By ~ 100

Author(s):

Nancy B. Goodman ◽

H. Fritzsche

Keyword(s):

Field Effect ◽

Amorphous Semiconductors ◽

Capacitance Voltage

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Determination of gap state density in polycrystalline silicon by field‐effect conductance

Applied Physics Letters ◽

10.1063/1.97460 ◽

1986 ◽

Vol 49 (16) ◽

pp. 1025-1027 ◽

Cited By ~ 159

Author(s):

G. Fortunato ◽

P. Migliorato

Keyword(s):

Polycrystalline Silicon ◽

Field Effect ◽

State Density ◽

Gap State

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Use of the field effect to determine the energy dependence of localized state density in amorphous semiconductors

Solid State Communications ◽

10.1016/0038-1098(72)90901-5 ◽

1972 ◽

Vol 10 (11) ◽

pp. 1081-1083 ◽

Cited By ~ 5

Author(s):

R.F. Egerton

Keyword(s):

Energy Dependence ◽

Field Effect ◽

State Density ◽

Amorphous Semiconductors ◽

Localized State

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Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon

Philosophical Magazine B ◽

10.1080/13642818808211229 ◽

1988 ◽

Vol 57 (5) ◽

pp. 573-586 ◽

Cited By ~ 83

Author(s):

G. Fortunato ◽

D. B. Meakin ◽

P. Migliorato ◽

P. G. Le Combers

Keyword(s):

Fermi Level ◽

Temperature Dependence ◽

Polycrystalline Silicon ◽

Field Effect ◽

State Density ◽

Effect Analysis ◽

Gap State

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An improved field-effect analysis for the determination of the pseudogap-state density in amorphous semiconductors

Philosophical Magazine B ◽

10.1080/01418638108222369 ◽

1981 ◽

Vol 44 (1) ◽

pp. 83-93 ◽

Cited By ~ 63

Author(s):

R. L. Weisfield ◽

D. A. Anderson

Keyword(s):

Field Effect ◽

State Density ◽

Amorphous Semiconductors ◽

Effect Analysis ◽

Pseudogap State

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Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽

10.3390/en13010187 ◽

2020 ◽

Vol 13 (1) ◽

pp. 187 ◽

Cited By ~ 1

Author(s):

Kamil Bargieł ◽

Damian Bisewski ◽

Janusz Zarębski

Keyword(s):

Silicon Carbide ◽

Integrated Circuit ◽

Field Effect ◽

Field Effect Transistors ◽

Dynamic Properties ◽

Modified Model ◽

Spice Model ◽

Capacitance Voltage ◽

Effect Transistor ◽

Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

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Correlation between 1/fnoise and interface state density at the Fermi level in field‐effect transistors

Journal of Applied Physics ◽

10.1063/1.335297 ◽

1985 ◽

Vol 57 (10) ◽

pp. 4811-4813 ◽

Cited By ~ 49

Author(s):

Herman E. Maes ◽

Sabir H. Usmani ◽

Guido Groeseneken

Keyword(s):

Fermi Level ◽

Field Effect ◽

Field Effect Transistors ◽

Interface State ◽

State Density ◽

Interface State Density

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Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1418405 ◽

2001 ◽

Vol 19 (6) ◽

pp. 2212 ◽

Cited By ~ 287

Author(s):

Seiichi Miyazaki

Keyword(s):

Energy Band ◽

Gate Dielectrics ◽

State Density ◽

Density Distributions ◽

High K ◽

Band Alignments ◽

Photoemission Study ◽

Gap State

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Complex conductivity in the presence of long range potential fluctuations. Application to the determination of the gap state density in undoped and boron doped a-Si : H films grown by CVD

Journal de Physique ◽

10.1051/jphys:0198800490110193300 ◽

1988 ◽

Vol 49 (11) ◽

pp. 1933-1950 ◽

Cited By ~ 2

Author(s):

F.M. Roche ◽

B. Pistoulet ◽

T. Soegandi

Keyword(s):

Long Range ◽

State Density ◽

Complex Conductivity ◽

Potential Fluctuations ◽

Boron Doped ◽

Range Potential ◽

Gap State

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The Mobility Lifetime Product of Electrons as a Function of Temperature and Electron Concentrations in a-Si:H

MRS Proceedings ◽

10.1557/proc-336-389 ◽

1994 ◽

Vol 336 ◽

Author(s):

Shinichi Nishida ◽

Hellmut Fritzsche

Keyword(s):

Cross Sections ◽

Field Effect ◽

Thin Film Transistor ◽

State Density ◽

Drift Diffusion ◽

Full Account ◽

Localization Radius ◽

Fitting Parameters ◽

Si Thin Film ◽

Capture Cross Sections

ABSTRACTThe photo-field effect has been measured between 4.2K and 300K using an a-Si thin film transistor. The data are fit self-consistently taking full account of changes in space charge, photo carrier drift, diffusion and recombination. Gap state density and capture cross sections are fitting parameters. Evidence for tunnel recombination is found. Electron localization radius was found to be 13Å.

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