Effect of Si Doping on Epitaxial Lateral Overgrowth of GaAs on GaAs-Coated Si Substrate

1992 ◽  
Vol 31 (Part 2, No. 3B) ◽  
pp. L359-L361 ◽  
Author(s):  
Seiichi Sakawa ◽  
Tatau Nishinaga
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Si Substrate ◽  
Si Doping ◽  
Lateral Overgrowth

Epitaxial Lateral Overgrowth of GaAs on a Si Substrate

1989 ◽  
Vol 28 (Part 2, No. 3) ◽  
pp. L337-L339 ◽  
Author(s):  
Yoshinori Ujiie ◽  
Tatau Nishinaga
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Si Substrate ◽  
Lateral Overgrowth

Crack-free GaN grown by using maskless epitaxial lateral overgrowth on Si substrate with thin SiC intermediate layer

2014 ◽  
Vol 211 (4) ◽  
pp. 744-747 ◽  
Author(s):  
H. Fang ◽  
M. Katagiri ◽  
H. Miyake ◽  
K. Hiramatsu ◽  
H. Oku ◽  
...  
Keyword(s):  
Intermediate Layer ◽  
Epitaxial Lateral Overgrowth ◽  
Si Substrate ◽  
Lateral Overgrowth

Epitaxial lateral overgrowth of GaN over AlOx surface formed on Si substrate

1999 ◽  
Vol 74 (19) ◽  
pp. 2836-2838 ◽  
Author(s):  
Nobuhiko P. Kobayashi ◽  
Junko T. Kobayashi ◽  
Xingang Zhang ◽  
P. Daniel Dapkus ◽  
Daniel H. Rich
Keyword(s):  
Epitaxial Lateral Overgrowth ◽  
Si Substrate ◽  
Lateral Overgrowth

Study on shallow donor-type impurities of GaN epilayer regrown by epitaxial lateral overgrowth technique

2021 ◽  
Vol 118 (1) ◽  
pp. 012105
Author(s):  
Wenxin Tang ◽  
Fu Chen ◽  
Li zhang ◽  
Kun Xu ◽  
Xuan Zhang ◽  
...  
Keyword(s):  
Shallow Donor ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Donor Type

Trenched epitaxial lateral overgrowth of fast coalesced a-plane GaN with low dislocation density

2006 ◽  
Vol 89 (25) ◽  
pp. 251109 ◽  
Author(s):  
Te-Chung Wang ◽  
Tien-Chang Lu ◽  
Tsung-Shine Ko ◽  
Hao-Chung Kuo ◽  
Min Yu ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Epitaxial Lateral Overgrowth ◽  
Lateral Overgrowth ◽  
Low Dislocation Density
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