Low-Temperature Si Selective Epitaxial Growth Using Electron-Beam-Induced Reaction

1995 ◽  
Vol 34 (Part 1, No. 11) ◽  
pp. 5904-5907 ◽  
Author(s):  
Fumihiko Hirose ◽  
Hitoshi Sakamoto
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Selective Epitaxial Growth ◽  
Induced Reaction

Morphology Control, Dopant Incorporation, and Selective Epitaxial Growth of 4H-SiC at Low Temperatures Using CH3Cl Growth Precursor

2006 ◽  
Vol 911 ◽  
Author(s):  
Yaroslav Koshka ◽  
Bharat Krishnan ◽  
Huang-De Lin ◽  
Galyna Melnychuk
Keyword(s):  
Growth Rate ◽  
Low Temperature ◽  
Epitaxial Growth ◽  
Growth Surface ◽  
Epitaxial Layers ◽  
Selective Epitaxial Growth ◽  
Dopant Incorporation ◽  
Nitrogen Donor ◽  
Order Of Magnitude ◽  
Silicon Vapor

AbstractLow-temperature homoepitaxial growth of 4H-SiC using halo-carbon precursors was further investigated to address the problems limiting increase of the growth rate of the defect-free epilayers at growth temperatures below 1300°C. Enhanced etching of Si clusters in the gas phase was achieved by adding HCl during the low-temperature growth. The effective Si/C ratio above the growth surface was increased as a result of reduced depletion of silicon vapor species by cluster condensation, which resulted in drastically improved epilayer morphology and significant increase of the growth rate. An intentional insitu nitrogen doping of epitaxial layers during 1300°C growth on Si and C faces revealed more than an order of magnitude higher nitrogen donor incorporation in the C-face epitaxial layers. Finally, a feasibility of selective epitaxial growth using low-temperature masking materials such as SiO2 was demonstrated.

Effects of dry etching damage removal on low‐temperature silicon selective epitaxial growth

1995 ◽  
Vol 78 (7) ◽  
pp. 4710-4714 ◽  
Author(s):  
H.‐C. Tseng ◽  
C. Y. Chang ◽  
F. M. Pan ◽  
L. P. Chen
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Dry Etching ◽  
Selective Epitaxial Growth

Low temperature epitaxial growth of CeO2(110) layers on Si(100) using electron beam assisted evaporation

1999 ◽  
Vol 343-344 ◽  
pp. 594-597 ◽  
Author(s):  
Tomoyasu Inouea ◽  
Yasuhiro Yamamoto ◽  
Masataka Satoh
Keyword(s):  
Electron Beam ◽  
Low Temperature ◽  
Epitaxial Growth
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