scholarly journals Charge Utilization Efficiency and Side Reactions in the Electrochemical Mechanical Polishing of 4H-SiC (0001)

2022 ◽  
Author(s):  
XIAOZHE YANG ◽  
Xu Yang ◽  
Haiyang Gu ◽  
Kentaro Kawai ◽  
Kenta Arima ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Current Density ◽  
Removal Rate ◽  
Underlying Mechanism ◽  
Mechanical Polishing ◽  
Utilization Efficiency ◽  
Side Reactions ◽  
Electrochemical Mechanical Polishing ◽  
Sic Wafer ◽  
Oxidation System

Abstract Slurryless electrochemical mechanical polishing (ECMP) is very effective in the polishing of silicon carbide (SiC) wafers. To achieve a high material removal rate (MRR) of SiC wafer using ECMP with low electrical energy loss, charge utilization efficiency in the anodic oxidation of the SiC surface was investigated and the underlying mechanism was clarified by modeling the anodic oxidation system of SiC in 1 wt% NaCl aqueous solution. The charge utilization efficiency in the anodic oxidation of SiC was found to be constant when the current density was less than 20 mA/cm2 and significantly decreased when the current density was greater than 30 mA/cm2, resulting in a significant reduction in the MRR. Modeling of the anodic oxidation system indicates that the charge utilization efficiency depended on the potential applied on the SiC surface: the oxidation of SiC occupied the dominant position in the anodizing system when the potential is lower than 25 V vs Ag|AgCl, charge utilization efficiency greatly decreased when the applied potential was greater than 25 V owing to the occurrence of oxidations of the H2O and Cl-. This research provides both a theoretical and practical foundation for using ECMP to polish SiC wafers.

Effect of Process Parameters on Material Removal Rate in Chemical Mechanical Polishing of 6H-SiC(0001)

2008 ◽  
Vol 600-603 ◽  
pp. 831-834 ◽  
Author(s):  
Joon Ho An ◽  
Gi Sub Lee ◽  
Won Jae Lee ◽  
Byoung Chul Shin ◽  
Jung Doo Seo ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Colloidal Silica ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Diamond Particles ◽  
Average Grain Size ◽  
Silica Slurry ◽  
Sic Wafer

2inch 6H-SiC (0001) wafers were sliced from the ingot grown by a conventional physical vapor transport (PVT) method using an abrasive multi-wire saw. While sliced SiC wafers lapped by a slurry with 1~9㎛ diamond particles had a mean height (Ra) value of 40nm, wafers after the final mechanical polishing using the slurry of 0.1㎛ diamond particles exhibited Ra of 4Å. In this study, we focused on investigation into the effect of the slurry type of chemical mechanical polishing (CMP) on the material removal rate of SiC materials and the change in surface roughness by adding abrasives and oxidizer to conventional KOH-based colloidal silica slurry. The nano-sized diamond slurry (average grain size of 25nm) added in KOH-based colloidal silica slurry resulted in a material removal rate (MRR) of 0.07mg/hr and the Ra of 1.811Å. The addition of oxidizer (NaOCl) in the nano-size diamond and KOH based colloidal silica slurry was proven to improve the CMP characteristics for SiC wafer, having a MRR of 0.3mg/hr and Ra of 1.087Å.

Investigation of anodic oxidation mechanism of 4H-SiC (0001) for electrochemical mechanical polishing

2018 ◽  
Vol 271 ◽  
pp. 666-676 ◽  
Author(s):  
Xu Yang ◽  
Rongyan Sun ◽  
Yuji Ohkubo ◽  
Kentaro Kawai ◽  
Kenta Arima ◽  
...  
Keyword(s):  
Anodic Oxidation ◽  
Oxidation Mechanism ◽  
Mechanical Polishing ◽  
Electrochemical Mechanical Polishing

Wafer Level Modeling of Electrochemical-Mechanical Polishing (ECMP)

2007 ◽  
Vol 991 ◽  
Author(s):  
Daniel Truque ◽  
Xiaolin Xie ◽  
Duane Boning
Keyword(s):  
Current Density ◽  
Removal Rate ◽  
Wafer Surface ◽  
Time Varying ◽  
Wafer Level ◽  
Density Distributions ◽  
Time Stepping ◽  
Zone Control ◽  
Electrochemical Mechanical Polishing ◽  
Control Schemes

ABSTRACTIn this work, we propose a wafer level dynamic ECMP model based on time-evolving current density distributions across the wafer. The copper layer on the wafer surface is discretized, and the potential and current density distributions are calculated based on the applied voltage zones and metal film thicknesses across the wafer. The copper removal rate is proportional to the current density, and thus the copper thickness (and conductance) can be calculated as a function of position on the wafer and polish time. Using a time-stepping simulation, the model is able to capture the wafer level non-uniformity and time-dependence of ECMP removal. The model is also able to capture the time-varying voltage zones used in ECMP, and can be used to find optimal voltage zone control schemes to achieve improved wafer-level uniformity.

Removal Rate Simulation of Dissolution-Type Electrochemical Mechanical Polishing

2010 ◽  
Vol 49 (7) ◽  
pp. 076701
Author(s):  
Akira Fukuda ◽  
Akira Kodera ◽  
Yasushi Toma ◽  
Tsukuru Suzuki ◽  
Hirokuni Hiyama ◽  
...  
Keyword(s):  
Removal Rate ◽  
Mechanical Polishing ◽  
Electrochemical Mechanical Polishing

Study of Cluster Magnetorheological-Chemical Mechanical Polishing Technology for the Atomic Scale Ultra-Smooth Surface Planarization of SiC

2013 ◽  
Vol 797 ◽  
pp. 284-290 ◽  
Author(s):  
Jiang Ting Zhu ◽  
Jia Bin Lu ◽  
Ji Sheng Pan ◽  
Qiu Sheng Yan ◽  
Xi Peng Xu
Keyword(s):  
Material Removal Rate ◽  
Chemical Mechanical Polishing ◽  
Material Removal ◽  
Smooth Surface ◽  
Removal Rate ◽  
Mechanical Polishing ◽  
Atomic Scale ◽  
Mechanical Removal ◽  
Mr Effect ◽  
Sic Wafer

The growth of epitaxial layer of SiC wafer requires the surface of SiC substrate to reach an atomic scale accuracy. To solve the problems of low machining efficiency and low surface accuracy in the polishing process of SiC wafer, a novel ultra-precision machining method based on the synergistic effect of chemical reaction and flexible mechanical removal of the magnetorheological (MR) effect, the MR-chemical mechanical polishing (MRCMP) is proposed. In this technique, magnetic particles, abrasives and chemical additives are used as MR-chemical polishing fluid to form a cluster MR-effect flexible polishing platen under an applied magnetic field, and it is expected to realize an atomic scale ultra-smooth surface planarization with good controllability and high material removal rate by using the flexible polishing platen. Polishing experimental results of C surface of 6H-SiC crystal substrate indicate that an atomic scale zero-defect surface can be obtained. The surface roughness of C surface of SiC wafer decreased from 50.86nm to 0.42nm and the material removal rate was 98nm/min when SiC wafer was polished for 60 minutes.

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