Promised Design of Energy-Efficient Negative-Capacitance Vertical Tunneling FET

Author(s):  
Narasimhulu Thoti ◽  
Yiming Li
Nanomaterials ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 75
Author(s):  
Maksim A. Pavlenko ◽  
Yuri A. Tikhonov ◽  
Anna G. Razumnaya ◽  
Valerii M. Vinokur ◽  
Igor A. Lukyanchuk

It is well known that the ferroelectric layers in dielectric/ferroelectric/dielectric heterostructures harbor polarization domains resulting in the negative capacitance crucial for manufacturing energy-efficient field-effect transistors. However, the temperature behavior of the characteristic dielectric properties, and, hence, the corresponding behavior of the negative capacitance, are still poorly understood, restraining the technological progress thereof. Here we investigate the temperature-dependent properties of domain structures in the SrTiO3/PbTiO3/SrTiO3 heterostructures and demonstrate that the temperature–thickness phase diagram of the system includes the ferroelectric and paraelectric regions, which exhibit different responses to the applied electric field. Using phase-field modeling and analytical calculations we find the temperature dependence of the dielectric constant of ferroelectric layers and identify the regions of the phase diagram wherein the system demonstrates negative capacitance. We further discuss the optimal routes for implementing negative capacitance in energy-efficient ferroelectric field-effect transistors.


2021 ◽  
pp. 105320
Author(s):  
Renuka Chowdary Bheemana ◽  
Aditya Japa ◽  
Siva Sankar Yellampalli ◽  
Ramesh Vaddi

2017 ◽  
Vol 64 (8) ◽  
pp. 3452-3458 ◽  
Author(s):  
Xueqing Li ◽  
John Sampson ◽  
Asif Khan ◽  
Kaisheng Ma ◽  
Sumitha George ◽  
...  

2017 ◽  
Vol 57 (2) ◽  
pp. 024201
Author(s):  
Kyungmin Jang ◽  
Takuya Saraya ◽  
Masaharu Kobayashi ◽  
Toshiro Hiramoto

Sign in / Sign up

Export Citation Format

Share Document