scholarly journals HF-QSRAM: Half-Select Free Quaternary SRAM Design with Required Peripheral Circuits for IoT/IoVT Applications

Author(s):  
Arsalan Ghasemian ◽  
Ebrahim Abiri ◽  
Kourosh Hassanli ◽  
Abdolreza Darabi

Abstract By using CNFET technology in 3a 2 nm node using a proposed SQI gate, two split bit-lines QSRAM architectures have been suggested to address the issue of increasing demand for storage capacity in IoT/IoVT applications. Peripheral circuits such as a novel quaternary to binary decoder for QSRAM have been offered. Various simulations on temperature, supply voltage, and access frequency have been done to evaluate and ensure the performance of the proposed SQI gate, suggested cells, and quaternary to binary decoder. Moreover, 1000 Monte-Carlo analyses on the fabrication parameters have been done to classify read and write delay and standby power of proposed cells along with PDP of proposed quaternary to binary decoder. It is worth mentioning that the PDP of the proposed SQI gate, decoder, and average power consumption of suggested HF-QSRAM cell reached 0.92 aJ, 4.13 aJ, and 0.15 µW, respectively, which are approximately 80%, 91%, and 33% improvements in comparison with the best existing designs in the literature.

2020 ◽  
Vol 11 (1) ◽  
pp. 129
Author(s):  
Po-Yu Kuo ◽  
Ming-Hwa Sheu ◽  
Chang-Ming Tsai ◽  
Ming-Yan Tsai ◽  
Jin-Fa Lin

The conventional shift register consists of master and slave (MS) latches with each latch receiving the data from the previous stage. Therefore, the same data are stored in two latches separately. It leads to consuming more electrical power and occupying more layout area, which is not satisfactory to most circuit designers. To solve this issue, a novel cross-latch shift register (CLSR) scheme is proposed. It significantly reduced the number of transistors needed for a 256-bit shifter register by 48.33% as compared with the conventional MS latch design. To further verify its functions, this CLSR was implemented by using TSMC 40 nm CMOS process standard technology. The simulation results reveal that the proposed CLSR reduced the average power consumption by 36%, cut the leakage power by 60.53%, and eliminated layout area by 34.76% at a supply voltage of 0.9 V with an operating frequency of 250 MHz, as compared with the MS latch.


Author(s):  
M. Naga Gowtham Et.al

In this paper, a hybrid 1-bit adder and 1-bit Subtractor designs are implemented. The hybrid adder circuit is constructed using CMOS (complementary metal oxide semiconductor) logic along with pass transistor logic. The design can be extended 16 and 32 bits lately. The proposed full adder circuit is compared with the existing conventional adders in terms of power, delay and area in order to obtain a better circuit that serves the present day needs of people. The existing 1-bit hybrid adder uses EXNOR logic combined with the transmission gate logic. For a supply voltage of 1.8V the average power consumption (4.1563 µW) which is extremely low with moderately low delay (224 ps) resulting because of the deliberate incorporation of very weak CMOS inverters coupled with strong transmission gates. At 1.2V supply the power and delay were recorded to be 1.17664 µW and 91.3 ps. The design was implemented using 1-bit which can also be extended into a 32-bit design later. The designed implementation offers a better performance in terms of power and speed compared to the existing full adder design styles. The circuits were implemented in DSCH2 and Microwind tools respectively. The parameters such as power, delay, layout area and speed of the proposed circuit design is compared with pass transistor logic, adiabatic logic, transmission gate adder and so on. The circuit is also designed with a decrease in transistors in order to get the better results. Full Subtractor, a combinational digital circuit which performs 1-bit subtraction with borrow in is designed as a part of this project. The main aim behind this part of the project is to design a 1-bit full Subtractor using CMOS technology with reduced number of transistors and hence the efficiency in terms of area, power and speed have been calculated is designed using 8,10,15and 16 transistors. The parameters were calculated in each case and the results have been tabulated.


Author(s):  
M. Naga Gowtham, P.S Hari Krishna Reddy, K Jeevitha, K Hari Kishore, E Raghuveera, Shaik Razia

In this paper, a hybrid 1-bit adder and 1-bit Subtractor designs are implemented. The hybrid adder circuit is constructed using CMOS (complementary metal oxide semiconductor) logic along with pass transistor logic. The design can be extended 16 and 32 bits lately. The proposed full adder circuit is compared with the existing conventional adders in terms of power, delay and area in order to obtain a better circuit that serves the present day needs of people. The existing 1-bit hybrid adder uses EXNOR logic combined with the transmission gate logic. For a supply voltage of 1.8V the average power consumption (4.1563 µW) which is extremely low with moderately low delay (224 ps) resulting because of the deliberate incorporation of very weak CMOS inverters coupled with strong transmission gates. At 1.2V supply the power and delay were recorded to be 1.17664 µW and 91.3 ps. The design was implemented using 1-bit which can also be extended into a 32-bit design later. The designed implementation offers a better performance in terms of power and speed compared to the existing full adder design styles. The circuits were implemented in DSCH2 and Microwind tools respectively. The parameters such as power, delay, layout area and speed of the proposed circuit design is compared with pass transistor logic, adiabatic logic, transmission gate adder and so on. The circuit is also designed with a decrease in transistors in order to get the better results. Full Subtractor, a combinational digital circuit which performs 1-bit subtraction with borrow in is designed as a part of this project. The main aim behind this part of the project is to design a 1-bit full Subtractor using CMOS technology with reduced number of transistors and hence the efficiency in terms of area, power and speed have been calculated is designed using 8,10,15and 16 transistors. The parameters were calculated in each case and the results have been tabulated.


Circuit World ◽  
2020 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Sandeep Garg ◽  
Tarun Kumar Gupta

Purpose This paper aims to propose a new fin field-effect transistor (FinFET)-based domino technique low-power series connected foot-driven transistors logic in 32 nm technology and examine its performance parameters by performing transient analysis. Design/methodology/approach In the proposed technique, the leakage current is reduced at footer node by a division of current to improve the performance of the circuit in terms of average power consumption, propagation delay and noise margin. Simulation of existing and proposed techniques are carried out in FinFET and complementary metal-oxide semiconductor technology at FinFET 32 nm technology for 2-, 4-, 8- and 16-input domino OR gates on a supply voltage of 0.9 V using HSPICE. Findings The proposed technique shows maximum power reduction of 77.74% in FinFET short gate (SG) mode in comparison with current-mirror-based process variation tolerant (CPVT) technique and maximum delay reduction of 51.34% in low power (LP) mode in comparison with CPVT technique at a frequency of 100 MHz. The unity noise gain of the proposed circuit is 1.10× to 1.54× higher in comparison with different existing techniques in FinFET SG mode and 1.11× to 1.71× higher in FinFET LP mode. The figure of merit of the proposed circuit is up to 15.77× higher in comparison with existing domino techniques. Originality/value The research proposes a new FinFET-based domino technique and shows improvement in power, delay, area and noise performance. The proposed design can be used for implementing high-speed digital circuits such as microprocessors and memories.


Author(s):  
Mingyuan Ren ◽  
Huijing Yang ◽  
Beining Zhang ◽  
Guoxu Zheng

This paper constructs and simulates the interface circuit of a temperature sensor based on SMIC 0.18 [Formula: see text]m CMOS. The simulation results show that when the power supply voltage is 1.8 V, the chopper op-amp gain is 89.44 dB, the low-frequency noise is 71.83 nV/Hz,[Formula: see text] and the temperature coefficient of the core temperature sensitive circuit is 1.7808 mV/[Formula: see text]C. The sampling rate of 10-bit SAR ADC was 10 kS/s, effective bit was 9.0119, SNR was 59.3256 dB, SFDR was 68.7091 dB, and THD was −62.5859 dB. The measurement range of temperature sensor interface circuit is −50[Formula: see text]C[Formula: see text]C, the relative temperature measurement error is ±0.47[Formula: see text]C, the resolution is 0.2[Formula: see text]C/LSB, and the overall average power consumption is 434.9 [Formula: see text]W.


As semiconductor industries is developing day by day to meet the requirement of today’s world. As scaling of ICs day by day to introduce functionality of the device while fabrication more and more component which results in shorter the life of the battery operated device which has to be improved. Here in this article we have measured performance parameters like power consumption, UNG, Evaluation Delay, standby power and speed of various domino circuits provided for various inputs like 8 &16 input OR gate. When we compared power, delay, and PDP of different topologies of domino circuit design with the simulation results which is performed by using SPICE tool at 32nm CNTFET process technology with supply voltage 0.9V and 27⁰ C of temperature at 100 MHz. All the simulation results is done in CMOS & CNTFET technology, it is observed that saving of average power upto 90.46% with same delay, with improvement of 5.8 × Noise-immunity with scaling of technology.


Author(s):  
Veepsa Bhatia ◽  
Neeta Pandey ◽  
Asok Bhattacharyya

A novel power-speed efficient current comparator is proposed in this paper. It comprises of only CMOS inverters in its structure, employing a simple biasing method. The structure offers simplicity of design. It posesses the very desirable features of high speed and low power dissipation, making this structure a highly desirable one for various current mode applications. The simulations have been performed using UMC 90 nm CMOS technology and the results demonstrate the propagation delay of about 3.1 ns and the average power consumption of 24.3 µW for 300 nA input current at supply voltage of 1V.


Author(s):  
Veepsa Bhatia ◽  
Neeta Pandey ◽  
Asok Bhattacharyya

A novel power-speed efficient current comparator is proposed in this paper. It comprises of only CMOS inverters in its structure, employing a simple biasing method. The structure offers simplicity of design. It posesses the very desirable features of high speed and low power dissipation, making this structure a highly desirable one for various current mode applications. The simulations have been performed using UMC 90 nm CMOS technology and the results demonstrate the propagation delay of about 3.1 ns and the average power consumption of 24.3 µW for 300 nA input current at supply voltage of 1V.


2008 ◽  
Vol 17 (05) ◽  
pp. 845-863 ◽  
Author(s):  
SALEH M. ABDEL-HAFEEZ ◽  
ANAS S. MATALKAH

Embedded SRAM design with high noise margin between read and write, low power, low supply voltages, and high speed become essential features in VLSI embedded applications. The complete embedded SRAM design of self-timing synchronization is proposed based on the CMOS eight-transistor (8T-Cell) memory cell circuit. The cell is based on the traditional six-transistor (6T-Cell) cross-coupled invertors with the addition of two NMOS transistors for separate read buffer circuit. The read buffer structure is based on pre-charging the read bit-line during the low value of read clock and evaluating the read bit-line during the high value of read clock, thereby maintaining one active line per column and eliminating the use of traditional sense amplifier with all its synchronization schemes. The simulation results show that the embedded SRAM of size 128-bit × 128-bit is operating at a maximum frequency of 200 MHz for Write and Read clock cycles with 1.62 V power supply, and measures a total average power consumption of 22.60 mW. All simulation results were conducted on 0.18 μm TSMC single poly and three layers of metals measuring a cell area of 2.2 × 3.0 μ m 2. The circuit is not meant to replace the SRAM with 6T-Cell transistor structure; however, it is attractive for applications related to high density with automation road-map design, such as graphic and network processor chips. In these applications, memory sizes are introduced in many different irregular geometries and uses all over the chip with storage sizes less than 20 k-bit, in addition, it is susceptible to large substrate noise as well as large coupling wire routing.


Sensors ◽  
2021 ◽  
Vol 21 (4) ◽  
pp. 1021
Author(s):  
Zhanserik Nurlan ◽  
Tamara Zhukabayeva ◽  
Mohamed Othman

Wireless sensor networks (WSN) are networks of thousands of nodes installed in a defined physical environment to sense and monitor its state condition. The viability of such a network is directly dependent and limited by the power of batteries supplying the nodes of these networks, which represents a disadvantage of such a network. To improve and extend the life of WSNs, scientists around the world regularly develop various routing protocols that minimize and optimize the energy consumption of sensor network nodes. This article, introduces a new heterogeneous-aware routing protocol well known as Extended Z-SEP Routing Protocol with Hierarchical Clustering Approach for Wireless Heterogeneous Sensor Network or EZ-SEP, where the connection of nodes to a base station (BS) is done via a hybrid method, i.e., a certain amount of nodes communicate with the base station directly, while the remaining ones form a cluster to transfer data. Parameters of the field are unknown, and the field is partitioned into zones depending on the node energy. We reviewed the Z-SEP protocol concerning the election of the cluster head (CH) and its communication with BS and presented a novel extended mechanism for the selection of the CH based on remaining residual energy. In addition, EZ-SEP is weighted up using various estimation schemes such as base station repositioning, altering the field density, and variable nodes energy for comparison with the previous parent algorithm. EZ-SEP was executed and compared to routing protocols such as Z-SEP, SEP, and LEACH. The proposed algorithm performed using the MATLAB R2016b simulator. Simulation results show that our proposed extended version performs better than Z-SEP in the stability period due to an increase in the number of active nodes by 48%, in efficiency of network by the high packet delivery coefficient by 16% and optimizes the average power consumption compared to by 34.


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