scholarly journals Hybrid La2O3-cPVP Dielectric for Organic Thin Film Transistor Applications

2022 ◽  
Author(s):  
SAGARIKA KHOUND ◽  
Jayanta Kumar Sarmah ◽  
RANJIT SARMA
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Single Layer ◽  
Rare Earth Oxide ◽  
Electrical Performance ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

Abstract In this work, we have studied the electrical performance of cross-linked polyvinyl phenol (cPVP) modified lanthanum oxide (La2O3) bilayer dielectric film in pentacene thin film transistors (TFT). A simple spin-coating and room temperature operated cross-linking reaction of the hydroxyl moieties of PVP and the nitrogen groups of PMF were carried out to form the cross-linked PVP. The deposition of a thin 30 nm cPVP layer over the La2O3 layer provided a low leakage current (<10−7A/cm2), causing a reduction in the interface trap density. Besides, the modified surface properties of the La2O3 layer were favorable for the growth of pentacene organic semiconductors. As a result, the current on-off ratio and the sub-threshold slope was improved from 104 and 1.0 V/decade to 105 and 0.67 V/decade. The La2O3∕cPVP pentacene TFT operated at −10 V also exhibited improvement in the field-effect mobility to 0.71 cm2/Vs from 0.48 cm2/Vs for the single-layer La2O3 (130 nm) device. Thus, our work demonstrates that the rare earth oxide La2O3 with cPVP is an excellent dielectric system in the context of emerging transistors with hybrid polymer gate dielectrics.

scholarly journals Tetracene Based OTFT with Nd2O3-dielectric Layer

2010 ◽  
Vol 2 (2) ◽  
pp. 214-220 ◽  
Author(s):  
D. Saikia ◽  
R. Sarma ◽  
P. Saikia ◽  
P. K. Saikia
Keyword(s):  
Thin Film ◽  
Rare Earth ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Hole Concentration ◽  
Rare Earth Oxide ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Low Leakage ◽  
Low Leakage Current

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10-4 cm2/V.s, ON-OFF ratio 3.3x102, sub-threshold swing 0.06 V/decade and hole concentration 8.74x1017 cm-3. Keywords: Organic thin film transistors; Tetracene; Rare earth oxide; Trap density. © 2010 JSR Publications. ISSN: 2070-0237 (Print); 2070-0245 (Online). All rights reserved. DOI: 10.3329/jsr.v2i2.4094               J. Sci. Res. 2 (2), 214-220 (2010) 

Control of Thin Film Transistor Operations with Polar Self-Assembled Monolayers

2005 ◽  
Vol 871 ◽  
Author(s):  
Y. Iwasa ◽  
T. Nishikawa ◽  
S. Kobayashi ◽  
T. Takenobu ◽  
T. Shimoda ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Self Assembled Monolayers ◽  
Carrier Injection ◽  
Organic Thin Film ◽  
Device Structure ◽  
Interface Modification ◽  
Assembled Monolayers

AbstractFrom the view point of materials sciences, one of the central issues in organic thin film transistors (TFTs) is the interface between different materials inherent in the device structure. For example, the interface between organic semiconductors and electrodes controls the carrier injection, while the interface between organic semiconductors and gate insulators governs the trap and carrier densities. Here, we show that interface modification with self-assembeld monolayers (SAMs) using polar organosilane molecules offers novel functions in organic TFTs. SAMs on SiO2 gate dielectrics was found to the carrier density at the conduction channel, while the adsorbed SAMs molecules on metal electrodes causes an ambipolar operation in fullerene TFTs. These interface modification techniques, since they are low temperature processes, provide novel opportunities for improving device manufacturing processes.

Materials and Physical Properties of Novel High-k and Medium-k Gate Dielectrics

2001 ◽  
Vol 670 ◽  
Author(s):  
Ran Liu ◽  
Stefan Zollner ◽  
Peter Fejes ◽  
Rich Gregory ◽  
Shifeng Lu ◽  
...  
Keyword(s):  
Thin Film ◽  
Transition Metal Oxides ◽  
Gate Dielectrics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K ◽  
Compositional Properties ◽  
Sharp Interfaces ◽  
Selection Of

ABSTRACTRapid shrinking in device dimensions calls for replacement of SiO2 by new gate insulators in future generations of MOSFETs. Among many desirable properties, potential candidates must have a higher dielectric constant, low leakage current, and thermal stability against reaction or diffusion to ensure sharp interfaces with both the substrate Si and the gate metal (or poly-Si). Extensive characterization of such materials in thin-film form is crucial not only for selection of the alternative gate dielectrics and processes, but also for development of appropriate metrology of the high-k films on Si. This paper will report recent results on structural and compositional properties of thin film SrTiO3 and transition metal oxides (ZrO2and HfO2).

High k PVP titanium dioxide composite dielectric with low leakage current for thin film transistor

2021 ◽  
pp. 106413
Author(s):  
Yuexin Yang ◽  
Zhuohui Xu ◽  
Tian Qiu ◽  
Honglong Ning ◽  
Jinyao Zhong ◽  
...  
Keyword(s):  
Thin Film ◽  
Titanium Dioxide ◽  
Leakage Current ◽  
Thin Film Transistor ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High K

Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey

Nanoscale ◽  
2019 ◽  
Vol 11 (48) ◽  
pp. 23459-23474 ◽  
Author(s):  
Taki Eddine Taouririt ◽  
Afak Meftah ◽  
Nouredine Sengouga ◽  
Marwa Adaika ◽  
Slimane Chala ◽  
...  
Keyword(s):  
Thin Film ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Oxide Thin Film ◽  
Electrical Performance ◽  
Zinc Oxide Thin Film ◽  
Dielectric Layers ◽  
High K ◽  
Different Types ◽  
Silvaco Atlas

This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.

Polystyrene-block-poly(methylmethacrylate) composite material film as a gate dielectric for plastic thin-film transistor applications

RSC Advances ◽  
2014 ◽  
Vol 4 (36) ◽  
pp. 18493-18502 ◽  
Author(s):  
Jagan Singh Meena ◽  
Min-Ching Chu ◽  
Ranjodh Singh ◽  
Chung-Shu Wu ◽  
Umesh Chand ◽  
...  
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Gate Dielectric ◽  
High Surface ◽  
Thin Film Transistor ◽  
Plastic Substrate ◽  
Low Leakage ◽  
Low Leakage Current ◽  
High Surface Energy ◽  
Low Temperature Process

Low-temperature process PS-b-PMMA composite film as gate dielectric deposited over plastic substrate, which exhibits high surface energy, high air stability, very low leakage current and better dielectric constant compared to their conventional polymer dielectrics for use in ZnO–TFT applications.

Tunable dielectric constant of polyimide–barium titanate nanocomposite materials as the gate dielectrics for organic thin film transistor applications

RSC Advances ◽  
2014 ◽  
Vol 4 (107) ◽  
pp. 62132-62139 ◽  
Author(s):  
Yang-Yen Yu ◽  
Cheng-Liang Liu ◽  
Yung-Chih Chen ◽  
Yu-Cheng Chiu ◽  
Wen-Chang Chen
Keyword(s):  
Thin Film ◽  
Dielectric Constant ◽  
Thin Film Transistors ◽  
Gate Dielectrics ◽  
Thin Film Transistor ◽  
Nanocomposite Materials ◽  
Organic Thin Film Transistors ◽  
Hybrid Nanocomposite ◽  
Organic Thin Film ◽  
Organic Thin Film Transistor

Polyimide (PI)–BaTiO3 (BT) NPs hybrid nanocomposite dielectrics with tunable BT loadings (X) were fabricated for investigating their properties on the pentacene organic thin film transistors (OTFTs).

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