Communication—Electron-Beam Stimulated Release of Dislocations from Pinning Sites in GaN
Keyword(s):
Abstract To achieve low leakage in GaN-based power devices and improve reliability in optoelectronic devices such as laser diodes, it is necessary to reduce dislocation density in epitaxial layers and control their introduction during processing. We have previously shown that dislocations can be introduced at room temperature in GaN. The effect of electron-beam irradiation at fixed points on the shift of such freshly introduced dislocations in GaN is reported. Dislocations can be displaced up to 10-15 µm from the beam position. We conclude the main reason limiting the dislocation travelling distance is the existence of a high number of pinning sites.
2010 ◽
Vol 6
(1)
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pp. 8-13
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2001 ◽
Vol 16
(2)
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pp. 553-557
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2004 ◽
Vol 67
(3)
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pp. 470-474
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2013 ◽
Vol 205-206
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pp. 435-440
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2018 ◽
Vol 5
(8)
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pp. 085006
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