scholarly journals Investigations of Optical Coulomb Blockade Oscillations in Plasmonic Nanoparticle Dimers

2022 ◽  
Vol 2022 ◽  
pp. 1-6
Author(s):  
Lamessa Gudata ◽  
Jule Leta Tesfaye ◽  
Abela Saka ◽  
R. Shanmugam ◽  
L. Priyanka Dwarampudi ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electric Fields ◽  
Gate Voltage ◽  
Coulomb Blockade ◽  
Hot Spot ◽  
Plasmonic Nanoparticle ◽  
Basic Physics ◽  
The Subject ◽  
Tunnelling Current ◽  
Linear Conductance

The exploration of Coulomb blockade oscillations in plasmonic nanoparticle dimers is the subject of this study. When two metal nanoparticles are brought together at the end of their journey, tunnelling current prevents an infinite connection dipolar plasmon and an infinite amplification in the electric fields throughout the hot spot in between nanoparticles from occurring. One way to think about single-electron tunnelling through some kind of quantum dot is to think about Coulomb blockage oscillations in conductance. The electron transport between the dot and source is considered. The model of study is the linear conductance skilled at describing the basic physics of electronic states in the quantum dot. The linear conductance through the dot is defined as G = lim ⟶ 0 I / V in the limit of infinity of small bias voltage. We discuss the classical and quantum metallic Coulomb blockade oscillations. Numerically, the linear conductance was plotted as a function gate voltage. The Coulomb blockade oscillation occurs as gate voltage varies. In the valleys, the conductance falls exponentially as a function gate voltage. As a result of our study, the conductance is constant at high temperature and does not show oscillation in both positive and negative gate voltages. At low temperature, conductance shows oscillation in both positive and negative gate voltages.

ANTI-RESONANCES IN A NORMAL METAL/SUPERCONDUCTOR JUNCTION WITH A SIDE-COUPLED QUANTUM DOT

2010 ◽  
Vol 24 (28) ◽  
pp. 5505-5513
Author(s):  
ZHENG-YI WU ◽  
JIN-FU FENG
Keyword(s):  
Quantum Dot ◽  
Transport Properties ◽  
Single Particle ◽  
Gate Voltage ◽  
Coulomb Blockade ◽  
Andreev Reflection ◽  
Normal Metal ◽  
Destructive Interference ◽  
Channel Network ◽  
Calculated Dependence

Using the equivalent single-particle multi-channel network and the Landauer formula, we theoretically study anti-resonances in conductance of a normal metal–superconductor junction with a side-coupled quantum dot. The transport properties depend on the interplay between the Coulomb blockade effect and the Andreev reflection. It is found that the calculated dependence of the conductance on the gate voltage of dot exhibits two anti-resonant conductance dips. This behavior is caused by the destructive interference of the wave directly transmitted through the normal metal–superconductor junction and the wave reflected from the dot. Moreover, we find that the shape of two anti-resonance profile is symmetric, due to the Andreev reflection, depending on the strength of coupling between the quantum dot and normal metal.

PHOTON-ASSISTED TRANSPORT IN CARBON NANOTUBE MESOSCOPIC DEVICE

2011 ◽  
Vol 10 (03) ◽  
pp. 419-426 ◽  
Author(s):  
ATTIA A. AWADALLAH ◽  
ADEL H. PHILLIPS ◽  
AZIZ N. MINA ◽  
RIHAM R. AHMED
Keyword(s):  
Carbon Nanotube ◽  
Quantum Dot ◽  
Photon Energy ◽  
Gate Voltage ◽  
Coulomb Blockade ◽  
Oscillatory Behavior ◽  
Metal Contacts ◽  
Computing Systems ◽  
Back Gate ◽  
Proposed Model

The aim of the present paper is to investigate the quantum transport properties of a mesoscopic device under the influence of gate voltage and photon energy. A model for such mesoscopic devices is proposed as two metal contacts are deposited on the carbon nanotube quantum dot to serve as source and drain electrodes. The conducting substrate is the gate electrode in this three-terminal mesoscopic device. Another metallic gate is used to govern the electrostatics and the switching of carbon nanotube channel. The substrate at the carbon nanotube quantum dot contacts are controlled by the back gate. Both effects of the photons energy and gate voltage are investigated. The photon-assisted tunneling probability is deduced by solving Dirac equation. Then the current is deduced according to Landauer–Buttiker formula. The quantum capacitance for the device is deduced in terms of density of states. Oscillatory behavior of the current is observed which is due to the Coulomb blockade oscillations. It was found, also, that the peak heights of the dependence of the current on the parameters under study are strongly affected by the interplay between the tunneled electrons and the photon energy. This interplay affects the sidebands resonance. The results obtained in this study are found to be in concordant with those in the literature, which confirm the correctness of the proposed model. This study is valuable for nanotechnology applications, e.g., photodetector devices and solid state quantum computing systems and quantum information processes.

KONDO EFFECT AND SPIN-CHARGE SEPARATION IN QUANTUM DOTS

2001 ◽  
Vol 15 (10n11) ◽  
pp. 1426-1442
Author(s):  
L. I. GLAZMAN ◽  
F. W. J. HEKKING ◽  
A. I. LARKIN
Keyword(s):  
Quantum Dot ◽  
Charge Separation ◽  
Coulomb Blockade ◽  
Kondo Effect ◽  
Broad Band ◽  
Single Mode ◽  
Kondo Temperature ◽  
Average Charge ◽  
Opposite Case ◽  
Anderson Impurity Model

The Kondo effect in a quantum dot is discussed. In the standard Coulomb blockade setting, tunneling between the dot and the leads is weak, the number of electrons in the dot is well-defined and discrete; the Kondo effect may be considered in the framework of the conventional one-level Anderson impurity model. It turns out however, that the Kondo temperature TK in the case of weak tunneling is extremely low. In the opposite case of almost reflectionless single-mode junctions connecting the dot to the leads, the average charge of the dot is not discrete. Surprisingly, its spin may remain quantized: s=1/2 or s=0, depending (periodically) on the gate voltage. Such a "spin-charge separation" occurs because, unlike an Anderson impurity, a quantum dot carries a broad-band, dense spectrum of discrete levels. In the doublet state, the Kondo effect develops with a significantly enhanced TK. Like in the weak-tunneling regime, the enhanced TK exhibits strong mesoscopic fluctuations. The statistics of the fluctuations is universal, and related to the Porter-Thomas statistics of the wave function fluctuations.

Modeling and Fabrication of Cladded Ge Quantum Dot Gate Silicon MOSFETs Exhibiting 3-State Behavior

2008 ◽  
Vol 1108 ◽  
Author(s):  
Faquir C. Jain ◽  
Mukesh Gogna ◽  
Fuad Alamoody ◽  
Supriya Karmakar ◽  
Ernesto Suarez ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Threshold Voltage ◽  
Intermediate State ◽  
Gate Voltage ◽  
Inversion Layer ◽  
Similar Increase ◽  
State Behavior ◽  
Charge Neutralization ◽  
Ge Quantum Dot ◽  
State Device

AbstractThis paper presents electrical transfer (Id-Vg) and output (Id-Vds) characteristics of a GeOx-cladded-Ge quantum dot (QD) gate Si MOSFET devices. In QD gate FETs, the manifestation of an intermediate state ‘i” makes it a 3-state device. The intermediate state originates due to compensation of increment in the gate voltage by a similar increase in the threshold voltage, which occurs via charge neutralization in the QD gate due to transfer of charge from the inversion layer to either first or second of the two QD layers.

scholarly journals Control of Local Electric Fields Influencing the Photoluminescence οf an Individual CdTe/ZnTe Quantum Dot

2009 ◽  
Vol 116 (5) ◽  
pp. 896-898 ◽  
Author(s):  
K. Haas ◽  
T. Kazimierczuk ◽  
P. Wojnar ◽  
A. Golnik ◽  
J.A. Gaj ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Electric Fields

Quantum Dot/Plasmonic Nanoparticle Metachromophores with Quantum Yields That Vary with Excitation Wavelength

Nano Letters ◽  
2011 ◽  
Vol 11 (7) ◽  
pp. 2725-2730 ◽  
Author(s):  
Keiko Munechika ◽  
Yeechi Chen ◽  
Andreas F. Tillack ◽  
Abhishek P. Kulkarni ◽  
Ilan Jen-La Plante ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Quantum Yields ◽  
Excitation Wavelength ◽  
Plasmonic Nanoparticle

A Novel Strategy for Managing User’s Locations in PCS Networks Based on a Novel Hot Spots Topology

2011 ◽  
Vol 3 (1) ◽  
pp. 41-76 ◽  
Author(s):  
Ahmed I. Saleh
Keyword(s):  
Hot Spot ◽  
Location Management ◽  
Network Location ◽  
Signaling Cost ◽  
Pcs Networks ◽  
Communications Services ◽  
Network Communications ◽  
The Subject ◽  
Novel Strategy ◽  
Ubiquitous Network

As PCS networks aim to provide “anytime-anywhere” cellular services, they enable Mobile Terminals (MTs) to communicate regardless of their locations. However, in order to guarantee a successful service delivery, MTs’ real time location should be continuously managed by the network. Location management plays the central role in providing ubiquitous network communications services, which includes two fundamental processes, i.e., registration and paging. Registration is concerned with the reporting of the current locations of the MTs, while paging is used to locate the MT. Both processes incur signaling cost, and due to the scarcity of PCS wireless bandwidth and for more scalable mobile services, it is important to reduce that signaling cost. As The blanket paging in current PCS networks wastes a lot of wireless bandwidth, the author focuses on the subject of paging in attempt to reduce the paging signaling cost under delay bounds. This paper challenges the signaling cost problem and successfully establishes a family of probability based paging strategies. The author will introduce a novel topology for the network registration area, which is called the hot spot topology (HST) and based on HST, a novel location management strategy, which is called “Flower Based Strategy” (FBS) is also introduced.

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