Peculiar Photoluminescence Properties of Strained InxGa1–xN/GaN Multiple-Quantum Wells: Experiment and Theory

2018 ◽  
Vol 10 (7) ◽  
pp. 950-963
Author(s):  
Nacir Tit ◽  
Pawan Mishra
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Properties

Effect of Si doping on the photoluminescence properties of AlGaInP/GaInP multiple quantum wells

2007 ◽  
Vol 38 (6-7) ◽  
pp. 767-770
Author(s):  
Li Shuti ◽  
Fan Guanghan ◽  
Zhou Tianming ◽  
Zheng Shuwen ◽  
Sun Huiqing
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Si Doping

scholarly journals Effect of boron incorporation on the structural and photoluminescence properties of highly-strained InxGa1-xAs/GaAs multiple quantum wells

AIP Advances ◽  
2013 ◽  
Vol 3 (7) ◽  
pp. 072111 ◽  
Author(s):  
Qi Wang ◽  
Zhigang Jia ◽  
Xiaomin Ren ◽  
Yingce Yan ◽  
Zhiqiang Bian ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Photoluminescence Properties ◽  
Highly Strained
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