scholarly journals Coin Paradox Spin–Orbit Interaction Enhances Magneto-Optical Effect and Its Application in On-Chip Integrated Optical Isolator

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Hao Hu ◽  
Jiwei Qi ◽  
Qiang Wu ◽  
Xianhui Fu ◽  
Hongjin Wu ◽  
...  

AbstractWe designed a simple on-chip integrated optical isolator made up of a metal–insulator–metal waveguide and a disc cavity filled with magneto-optical material to enhance the transverse magneto-optical effect through the coin paradox spin–orbit interaction (SOI). The simulation results of the non-reciprocal transmission properties of this optical structure show that a high-performance on-chip integrated optical isolator is obtained. The maximum isolation ratio is greater than 60 dB with a corresponding insertion loss of about 2 dB. The great performance of the optical isolator is attributed to the strong transverse magneto-optical effect, which is enhanced by the coin paradox SOI. Moreover, the enhancement of the transverse magneto-optical effect through the coin paradox SOI is more substantial for smaller azimuthal mode number n. Benefiting from this, the transverse magneto-optical effect remains strong in a wide wavelength range. Additionally, a smaller cavity has a stronger transverse magneto-optical effect in the same wavelength range. Our research provides a new perspective for creating highly integrated magneto-optical devices.

2021 ◽  
Author(s):  
Hao Hu ◽  
Jiwei Qi ◽  
Qiang Wu ◽  
Xianhui Fu ◽  
Hongjin Wu ◽  
...  

Abstract We designed a simple on-chip integrated optical isolator made up of a MIM waveguide and a disc cavity filled with magneto-optical material to enhance the transverse magneto-optical effect through the coin paradox spin-orbit interaction (SOI). The simulation results of the non-reciprocal transmission properties of this optical structure show that a high-performance on-chip integrated optical isolator is obtained. The maximum isolation ratio (IR) is greater than 40 dB with a corresponding insertion loss (IL) of about 2 dB. The great performance of the optical isolator is attributed to the strong transverse magneto-optical effect, which is enhanced by the coin paradox SOI. Moreover, the enhancement of the transverse magneto-optical effect through the coin paradox SOI is more substantial for smaller azimuthal mode number n. Benefitting from this, the transverse magneto-optical effect remains strong in a wide wavelength range. Additionally, a smaller cavity has a stronger transverse magneto-optical effect in the same wavelength range. Our research provides a new perspective for creating highly integrated magneto-optical devices.


2016 ◽  
Vol 108 (15) ◽  
pp. 151103 ◽  
Author(s):  
Jingwen Ma ◽  
Xiang Xi ◽  
Zejie Yu ◽  
Xiankai Sun

Nano Letters ◽  
2017 ◽  
Vol 17 (5) ◽  
pp. 3139-3144 ◽  
Author(s):  
Alba Espinosa-Soria ◽  
Francisco J. Rodríguez-Fortuño ◽  
Amadeu Griol ◽  
Alejandro Martínez

Crystals ◽  
2018 ◽  
Vol 8 (10) ◽  
pp. 377
Author(s):  
Syougo Iemoto ◽  
Satoshi Sumi ◽  
Pham Van Thach ◽  
Hiroyuki Awano ◽  
Masamitsu Hayashi

Magnetic films with a heavy metal layer show strong interfacial interaction of spin-orbit. Spin-orbit interaction is one of the key technologies for spintronics. In this paper, we measured magneto-optical Kerr spectra of Pt/TbCo hetero-structure films on a thermally oxidized silicon substrate (0.3 mm); A: Pt (3 nm)/TbCo (6 nm)/Pt (3 nm), B: Si3N4 (10 nm)/TbCo (6 nm)/Pt (3 nm), and C: Pt (3 nm)/TbCo (6 nm)/Si3N4 (10 nm). Magneto-optical Kerr spectra of each sample were measured with a wavelength range of 300–700 nm, and were compared to the simulated spectra using the effective refractive index method. In the sample A, which has a symmetric structure, the simulated spectra are consistent with the measured ones. On the other hand, in the samples B and C, with an asymmetric structure, there are some differences between the simulated spectra and the measured ones in a lower photon energy region. This may be caused by interfacial effects of the spin-orbit interaction.


Author(s):  
J. Nitta

This chapter focuses on the electron spin degree of freedom in semiconductor spintronics. In particular, the electrostatic control of the spin degree of freedom is an advantageous technology over metal-based spintronics. Spin–orbit interaction (SOI), which gives rise to an effective magnetic field. The essence of SOI is that the moving electrons in an electric field feel an effective magnetic field even without any external magnetic field. Rashba spin–orbit interaction is important since the strength is controlled by the gate voltage on top of the semiconductor’s two-dimensional electron gas. By utilizing the effective magnetic field induced by the SOI, spin generation and manipulation are possible by electrostatic ways. The origin of spin-orbit interactions in semiconductors and the electrical generation and manipulation of spins by electrical means are discussed. Long spin coherence is achieved by special spin helix state where both strengths of Rashba and Dresselhaus SOI are equal.


2019 ◽  
Vol 3 (6) ◽  
Author(s):  
J. N. Nelson ◽  
J. P. Ruf ◽  
Y. Lee ◽  
C. Zeledon ◽  
J. K. Kawasaki ◽  
...  

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Miguel J. Carballido ◽  
Christoph Kloeffel ◽  
Dominik M. Zumbühl ◽  
Daniel Loss

2021 ◽  
Vol 5 (1) ◽  
Author(s):  
Yuanjie Chen ◽  
Shaoyun Huang ◽  
Dong Pan ◽  
Jianhong Xue ◽  
Li Zhang ◽  
...  

AbstractA dual-gate InSb nanosheet field-effect device is realized and is used to investigate the physical origin and the controllability of the spin–orbit interaction in a narrow bandgap semiconductor InSb nanosheet. We demonstrate that by applying a voltage over the dual gate, efficiently tuning of the spin–orbit interaction in the InSb nanosheet can be achieved. We also find the presence of an intrinsic spin–orbit interaction in the InSb nanosheet at zero dual-gate voltage and identify its physical origin as a build-in asymmetry in the device layer structure. Having a strong and controllable spin–orbit interaction in an InSb nanosheet could simplify the design and realization of spintronic deceives, spin-based quantum devices, and topological quantum devices.


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