In situ observation of small onion formation under electron irradiation of turbostratic BC2N and turbostratic BN

2022 ◽  
pp. 367-370
Author(s):  
O Stéphan ◽  
Y Bando ◽  
C Dussarrat ◽  
K Kurashima ◽  
T Tamiya

2003 ◽  
Vol 792 ◽  
Author(s):  
X. T. Zu ◽  
F.R. Wan ◽  
S. Zhu ◽  
L. M. Wang

ABSTRACTTiNi shape memory alloy (SMA) has potential applications for nuclear reactors and its phase stability under irradiation is becoming an important topic. Some irradiation-induced diffusion-dependent phase transformations, such as amorphization, have been reported before. In the present work, the behavior of diffusion-independent phase transformation in TiNi SMA was studied by electron irradiation at room temperature. The effect of irradiation on the martensitic transformation of TiNi shape memory alloys was studied by Transmission Electron Microscopy (TEM) with in-situ observation and differential scanning calorimeter (DSC). The results of TEM and DSC measurements show that the microstructure of samples is R phase at room temperature. Electron irradiations were carried out using several different TEM with accelerating voltage of 200 kV, 300 kV, 400 kV and 1000 kV. Also the accelerating voltage in the same TEM was changed to investigate the critical voltage for the effect of irradiation on phase transformation. It was found that a phase transformation occurred under electron irradiation above 320 kV, but never appeared at 300 kV or lower accelerating voltage. Such phase transformation took place in a few seconds of irradiation and was independent of atom diffusion. The mechanism of Electron-irradiation-induced the martensitic transformation due to displacements of atoms from their lattice sites produced by the accelerated electrons.









2020 ◽  
Vol 262 ◽  
pp. 127061
Author(s):  
Xiaochen Huang ◽  
Yi Feng ◽  
Jinlong Ge ◽  
Xiaolin Meng ◽  
Yongkui Wang ◽  
...  


2007 ◽  
Vol 449-451 ◽  
pp. 1111-1114 ◽  
Author(s):  
Takeshi Nagase ◽  
Akihiro Nino ◽  
Yukichi Umakoshi


Author(s):  
Kiichi Hojou ◽  
Sigemi Furuno ◽  
Hitoshi Otsu ◽  
Kazuhiko Izui

Observations of damage structure and analysis of compositional changes are important to elucidate the fundamental process of radiation damage in ion-irradiated ceramics. We have developed an in-situ observation system consisting of a 100 keV transmission electron microscope linked with both an ion accelerator and a parallel electron energy loss spectrometer (P-EELS), as shown in Fig.1[1,2]. Using this system, the plasmon loss peaks of SiC crystals were found to shift to the lower energy side during hydrogen ion irradiation at room temperature (RT)[3].The present paper reports the results of in-situ observation and analysis by P-EELS of SiC crystals during hydrogen ion irradiation and the effects of 100keV electron irradiation after hydrogen ion implantation.Specimens used in the present work were SiC sintered crystals supplied from Hitachi Research Lab., Hitachi LTD. Thin films suitable for electron microscopy were made by 2-4 keV Ar+ions etching after mechanical polishing and then irradiated with 10keV H2+ions by use of ion accelerator combined with EM at RT and 800 °C, respectively.





2011 ◽  
Vol 75 (3) ◽  
pp. 173-178
Author(s):  
Hitoshi Seki ◽  
Syunzi Masubuchi ◽  
Hideo Watanabe ◽  
Naoaki Yoshida


2011 ◽  
Vol 417 (1-3) ◽  
pp. 279-282 ◽  
Author(s):  
H. Oka ◽  
M. Watanabe ◽  
H. Kinoshita ◽  
T. Shibayama ◽  
N. Hashimoto ◽  
...  


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