scholarly journals E20 Excimer Laser 3D Machining Based on Irradiation Pulse Number Control(Laser processing)

2009 ◽  
Vol 2009.5 (0) ◽  
pp. 581-584 ◽  
Author(s):  
Ryo SUZUKI ◽  
Jiang ZHU ◽  
Tomohisa TANAKA ◽  
Yoshio SAITO
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Pulse Number ◽  
Irradiation Pulse ◽  
Control Laser

scholarly journals Excimer Laser 3D Machining Based on Irradiation Pulse Number Control

2010 ◽  
Vol 4 (5) ◽  
pp. 1033-1043 ◽  
Author(s):  
Tomohisa TANAKA ◽  
Ryo SUZUKI ◽  
Jiang ZHU ◽  
Yoshio SAITO
Keyword(s):  
Excimer Laser ◽  
Pulse Number ◽  
Irradiation Pulse

Finite element simulation for ultraviolet excimer laser processing of patterned Si/SiGe/Si(100) heterostructures

2010 ◽  
Vol 97 (1) ◽  
pp. 014102 ◽  
Author(s):  
J. C. Conde ◽  
E. Martín ◽  
S. Chiussi ◽  
F. Gontad ◽  
C. Serra ◽  
...  
Keyword(s):  
Finite Element ◽  
Finite Element Simulation ◽  
Excimer Laser ◽  
Laser Processing ◽  
Element Simulation

Excimer Laser Processing of Nodular Iron

1994 ◽  
Vol 9 (3) ◽  
pp. 415-427 ◽  
Author(s):  
A. Fontes ◽  
M. Jeandin ◽  
Olivier Uteza ◽  
Marc Sentis ◽  
Michel Frainais
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
Nodular Iron

Formation of periodic grain boundary in an Si thin film crystallized by a linearly polarized Nd:YAG pulse laser with an ultra sonic oscillator

2004 ◽  
Vol 808 ◽  
Author(s):  
Hirokazu Kaki ◽  
Takehiko Ootani ◽  
Susumu Horita
Keyword(s):  
Grain Boundary ◽  
Pulse Laser ◽  
Pulse Number ◽  
Novel Technique ◽  
Thermal Distribution ◽  
Irradiation Pulse ◽  
Linearly Polarized ◽  
Boundary Location ◽  
Amorphous Si ◽  
Si Thin Film

ABSTRACTIn order to obtain a large silicon (Si) grain and to control the location of its boundary in a Si film melting-crystallized by a pulse laser, we have proposed to use periodic thermal distribution spontaneously induced by irradiation of a linearly polarized laser beam. We estimated the suitable amorphous Si (a-Si) thickness taking account of multiple reflection theoretically and confirmed it experimentally. Also, we proposed a novel technique to reduce the irradiation pulse number to control the grain boundary location stably in the crystallized Si film, in which the elastic wave was generated on the surface of a-Si film prior to melting-crystallization by using an ultra sonic oscillator. Owing to this technique, we can control the grain boundary location periodically with only 1 pulse irradiation in the crystallized Si film.

Pulsed Excimer Laser Processing of AlN/GaN Thin Films

1996 ◽  
Vol 449 ◽  
Author(s):  
W. S. Wong ◽  
L. F. Schloss ◽  
G.S. Sudhir ◽  
B. P. Linder ◽  
K-M. Yu ◽  
...  
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Excimer Laser ◽  
Laser Processing ◽  
Laser Annealing ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
Emission Peak ◽  
Dopant Activation ◽  
Pulsed Laser Annealing

ABSTRACTA KrF (248 nm) excimer laser with a 38 ns pulse width was used to study pulsed laser annealing of AIN/GaN bi-layers and dopant activation of Mg-implanted GaN thin films. For the AIN/GaN bi-layers, cathodoluminescence (CL) showed an increase in the intensity of the GaN band-edge peak at 3.47 eV after pulsed laser annealing at an energy density of 2000 mJ/cm2. Rutherford backscattering spectrometry of a Mg-implanted A1N (75 nm thick)/GaN (1.0 μm thick) thin-film heterostructure showed a 20% reduction of the 4He+ backscattering yield after laser annealing at an energy density of 400 mJ/cm2. CL measurements revealed a 410 nm emission peak indicating the incorporation of Mg after laser processing.

193 nm Excimer laser processing of Si/Ge/Si(100) micropatterns

2016 ◽  
Vol 362 ◽  
pp. 217-220 ◽  
Author(s):  
F. Gontad ◽  
J.C. Conde ◽  
S. Chiussi ◽  
C. Serra ◽  
P. González
Keyword(s):  
Excimer Laser ◽  
Laser Processing ◽  
193 Nm

scholarly journals Fabrication of Superhydrophobic Silicone Rubber with Periodic Micro/Nano-Suction Cup Structure by ArF Excimer Laser-Induced Photodissociation

Nanomaterials ◽  
2019 ◽  
Vol 9 (6) ◽  
pp. 870 ◽  
Author(s):  
Masayuki Okoshi
Keyword(s):  
Excimer Laser ◽  
Silicone Rubber ◽  
Focal Point ◽  
Pulse Number ◽  
Entire Surface ◽  
Suction Cup ◽  
Atomic Force ◽  
Superhydrophobic Property ◽  
Arf Excimer Laser ◽  
193 Nm

A 193-nm ArF excimer laser was used to induce the photodissociation of Si–O bonds of silicone rubber in order to fabricate a periodic micro/nano-suction cup silicone structure, approximately 1 μm in diameter and 2 μm in height at regular intervals of 2.5 μm. The laser was focused on Al-coated silicone rubber by each silica glass microsphere 2.5 μm in diameter, which covered the entire surface of the silicone rubber. The silicone rubber underneath each microsphere photochemically swelled after laser-ablating the coated Al to limit the diameter of the swelling. Simultaneously, the coated Al was able to adjust the focal point to the surface of the silicone rubber to form a hole approximately 500 nm in diameter, centered at the swollen silicone. The dependences of the thickness of the coated-Al and the laser pulse number are discussed, based on the observations of a scanning electron microscope (SEM) and an atomic force microscope (AFM). The superhydrophobic property of the fabricated micro/nano-suction cup structure was successfully found.

Sign in / Sign up

Export Citation Format

Share Document