scholarly journals Chemical Bath Deposition of Cd1−xZnxS as Buffer Layer in CIGS Solar Cell

2021 ◽  
Author(s):  
Yuming Xue ◽  
Xinyu Wang ◽  
Liming Zhang ◽  
Shipeng Zhang ◽  
Lang Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Buffer Layer ◽  
Chemical Bath Deposition ◽  
Deposition Rate ◽  
Lattice Mismatch ◽  
Solution Concentration ◽  
State Density ◽  
Cubic Phase ◽  
Cigs Solar Cell

Cd1-xZnxS thin films were deposited on glass substrates by chemical bath deposition (CBD). The effect of ZnSO4 solution concentration on the properties of the thin films was analyzed. The concentration of ZnSO4 solution affects the deposition rate of Cd1-xZnxS thin films. When the deposition rate is low, Cd1-xZnxS cubic crystal phase is formed. The surface morphology of hexagonal Cd1-xZnxS thin films is denser than that of cubic phase, the lattice mismatch rate of cubic phase Cd1-xZnxS thin films and CIGS is lower, only 0.56%, the interfacial state density is lower. SCAPS software was used to simulate the performance of the buffer layer, and the conversion efficiency of the cubic phase Cd1-xZnxS buffer layer in CIGS Solar Cell was up to 23.50%. Based on the EDS results, the function relationship between the contents of Zn2+ and Cd2+ in the films and the band gap content was deduced.

Diluted chemical bath deposition of CdZnS as prospective buffer layer in CIGS solar cell

2020 ◽  
Author(s):  
F.T. Munna ◽  
Vidhya Selvanathan ◽  
K. Sobayel ◽  
Ghulam Muhammad ◽  
Nilofar Asim ◽  
...  
Keyword(s):  
Solar Cell ◽  
Buffer Layer ◽  
Chemical Bath Deposition ◽  
Cigs Solar Cell

Study on the Buffer Layer of CIS Thin Film Solar Cell by Separate-Melting Chemical Bath Deposition Methods

2012 ◽  
Vol 512-515 ◽  
pp. 178-181
Author(s):  
King Leung Wong ◽  
Hung En Chen ◽  
Wen Lih Chen
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Solar Cell ◽  
Buffer Layer ◽  
Chemical Bath Deposition ◽  
Thin Film Solar Cell ◽  
Cadmium Sulphide ◽  
Soda Lime ◽  
Cds Thin Film ◽  
Cds Thin Films

In this work, cadmium sulphide (CdS) buffer layer of CuInSe2 (CIS) thin film solar cell is fabricated by separate-melting Chemical Bath Deposition (CBD) methods. The reason of adopting the CdS thin film as the buffer layer of CIS thin film solar cell is that the CdS can act as energy gap buffer and reduce the band-offset between CIS absorbing layer and the Transparent Conductive Oxide layer. The CdS thin films are generated by the separate-melting CBD methods in situation of atmosphere. In order to analyze the characteristics of the CdS thin films conveniently, the CdS thin films are firstly fabricated on Soda-lime, and the final found optimal CdS thin film is fabricated on the CIS/Mo/Soda-lime glasses. Then the p-n diode characteristic of the CdS/CIS/Mo/Soda-lime glasses is measured by four-point probe. And the CdS thin films are fabricated by the separate-melting CBD methods through various combinations of time interval from 40 and 60 minutes and temperature range from 70,75,80 and 85°C. It is found that the combination of 85°C and 60 minutes is optimal to obtain smoother surface and more uniform thickness of CdS thin film. Additionally from optical characteristic analysis, in situation of emitted light wave length 500 nm, the transmittance of the cadmium sulphide thin film is 61%. Meanwhile, the band gap is close to theoretical value of 2.4 eV.

Buffer Layer Thickness and the Properties of InN Thin Films on AIN- Seeded (00.1) Sapphire And (111) Silicon

1994 ◽  
Vol 339 ◽  
Author(s):  
T. J. Kistenmacher ◽  
S. A. Ecelberger ◽  
W. A. Bryden
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Layer Thickness ◽  
Electrical Transport ◽  
Lattice Mismatch ◽  
Electrical Mobility ◽  
Seeded Growth ◽  
Electrical Transport Properties ◽  
Buffer Layer Thickness ◽  
Homogeneous Strain

ABSTRACTIntroduction of a buffer layer to facilitate heteroepitaxy in thin films of the Group IIIA nitrides has had a tremendous impact on growth morphology and electrical transport. While AIN- and self-seeded growth of GaN has captured the majority of attention, the use of AIN-buffered substrates for InN thin films has also had considerable success. Herein, the properties of InN thin films grown by reactive magnetron sputtering on AIN-buffered (00.1) sapphire and (111) silicon are presented and, in particular, the evolution of the structural and electrical transport properties as a function of buffer layer sputter time (corresponding to thicknesses from ∼50Å to ∼0.64 μm) described. Pertinent results include: (a) for the InN overlayer, structural coherence and homogeneous strain normal to the (00.1) growth plane are highly dependent on the thickness of the AIN-buffer layer; (b) the homogeneous strain in the AIN-buffer layer is virtually nonexistent from a thickness of 200Å (where a significant X-ray intensity for (00.2)AIN is observed); and (c) the n-type electrical mobility for films on AIN-nucleated (00.1) sapphire is independent of AIN-buffer layer thickness, owing to divergent variations in carrier concentration and film resistivity. These effects are in the main interpreted as arising from a competition between the lattice mismatch of the InN overlayer with the substrate and with the AIN-buffer layer.

Application of a Sn4+ doped In2S3 thin film in a CIGS solar cell as a buffer layer

2020 ◽  
Vol 4 (1) ◽  
pp. 362-368 ◽  
Author(s):  
SeongYeon Kim ◽  
Md. Salahuddin Mina ◽  
Kiwhan Kim ◽  
Jihye Gwak ◽  
JunHo Kim
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Buffer Layer ◽  
Cigs Solar Cell ◽  
In2s3 Thin Film ◽  
Cigs Solar Cells

As a Cd-free buffer, In2S3 buffer has been used in Cu(In,Ga)Se2 (CIGS) solar cells.

scholarly journals Modeling and performance analysis dataset of a CIGS solar cell with ZnS buffer layer

Data in Brief ◽  
2017 ◽  
Vol 14 ◽  
pp. 246-250 ◽  
Author(s):  
Md. Billal Hosen ◽  
Ali Newaz Bahar ◽  
Md. Karamot Ali ◽  
Md. Asaduzzaman,
Keyword(s):  
Solar Cell ◽  
Performance Analysis ◽  
Buffer Layer ◽  
Cigs Solar Cell ◽  
And Performance

Manufacturable Large Area CdS Thin Films for Solar Cell Applications Monitored with Optical Emission Spectroscopy

1999 ◽  
Vol 569 ◽  
Author(s):  
L. Wang ◽  
I. Eisgruber ◽  
R. Hollingsworth ◽  
C. DeHart ◽  
T. Wangensteen ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cell ◽  
Deposition Rate ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
High Efficiency ◽  
Accurate Determination ◽  
Complex Function ◽  
Optical Emission ◽  
Cds Thin Films

ABSTRACTManufacturable, sputtered, device-quality, CdS thin films are reported for high efficiency solar cell applications. The sputtering plasma is monitored during deposition using optical emission spectroscopy. Optical emission spectroscopy (OES) is commonly used as an end point detector in plasma etching processes, where the disappearance of the etch product wavelength signature provides an unambiguous indication of completion. OES is only now beginning to be examined for controlling deposition processes, primarily because the dependence between OES signal and film properties can frequently be a quite complex function of the electron and gas densities, the emitting species concentration, the electron impact excitation cross section, the electron energy distribution function, and the probability of inelastic collisions between plasma species. OES monitoring during CdS sputtering allows accurate determination of deposition rate. Both Cd and S emission peaks can be identified, allowing tracking of the results of preferential sputtering. The OES output has been tied directly into the chamber controls, resulting in automatic closed-loop control of deposition rate. The resulting CdS films are device-quality and well-suited to large-scale manufacturing. A photovoltaic efficiency of 12.1 % was obtained from sputtered CdS on CIGS absorber, compared to 12.9% for the traditional, but less manufacturable, chemical bath deposited CdS on the same batch of CIGS. The sputtering technique has many advantages over other deposition techniques, such as easy scaleablity to large areas, simple process control, compatibility with in-line manufacturing of layered devices and low cost. RF, or lower-cost pulsed DC, sputtering power supplies can be used with comparable deposition rates. The structure, optical, and electrical properties of the sputtered CdS thin films have been characterized.

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