Analytical models of electron leakage currents in gallium nitride-based laser diodes and light-emitting diodes

Compounds such as GaN, ZnSe, and SiC are the compounds that currently hold the most potential in developing blue light-emitting diodes (LEDs) and blue laser diodes (LDs). Speaking of the physical property, the gallium nitride belongs to a direct bandgap material with an obviously super luminous efficiency; therefore, the gallium nitride has the dominate tendency than that of others materials. Although the gallium nitride has excellent physical properties, but in actually it is suffered many challenges during the manufacture process. Especially, it is extremely sensitive to the electrostatic discharge (ESD) threat. In other words GaN diodes generally exhibit very low anti-ESD capabilities when in HBM, MM reversed bias modes. These LEDs in the MM stress situation, its ESD immunity level usually is only about 50-V extremely low anti-ESD ability. Therefore, in this paper, GaN LED DUTs will be stressed and investigated under HBM and MM pulses bombardments, and the aim of this work is to describe a detailed investigation of the factors that limit the robustness of GaN-based LEDs under ESD transient events; finally they will provide some countermeasures in ESD reliability consideration.

Download Full-text

Development of gallium-nitride-based light-emitting diodes (LEDs) and laser diodes for energy-efficient lighting and displays

Acta Materialia ◽

10.1016/j.actamat.2012.10.042 ◽

2013 ◽

Vol 61 (3) ◽

pp. 945-951 ◽

Cited By ~ 246

Author(s):

Steven P. DenBaars ◽

Daniel Feezell ◽

Katheryn Kelchner ◽

Siddha Pimputkar ◽

Chi-Chen Pan ◽

...

Keyword(s):

Gallium Nitride ◽

Energy Efficient ◽

Light Emitting Diodes ◽

Laser Diodes ◽

Light Emitting

Download Full-text

Numerical Simulation on Electrical-Thermal Properties of Gallium-Nitride-Based Light-Emitting Diodes Embedded in Board

Advances in OptoElectronics ◽

10.1155/2012/495981 ◽

2012 ◽

Vol 2012 ◽

pp. 1-6 ◽

Cited By ~ 4

Author(s):

Xing-ming Long ◽

Rui-jin Liao ◽

Jing Zhou

Keyword(s):

Finite Element ◽

Gallium Nitride ◽

Indium Tin Oxide ◽

Light Emitting Diodes ◽

Thermal Characteristics ◽

Junction Temperature ◽

Current Crowding ◽

Total Thermal Resistance ◽

Light Emitting ◽

Packaging Structure

The electrical-thermal characteristics of gallium-nitride- (GaN-) based light-emitting diodes (LED), packaged by chips embedded in board (EIB) technology, were investigated using a multiphysics and multiscale finite element code, COMSOL. Three-dimensional (3D) finite element model for packaging structure has been developed and optimized with forward-voltage-based junction temperatures of a 9-chip EIB sample. The sensitivity analysis of the simulation model has been conducted to estimate the current and temperature distribution changes in EIB LED as the blue LED chip (substrate, indium tin oxide (ITO)), packaging structure (bonding wire and chip numbers), and system condition (injection current) changed. This method proved the reliability of simulated results in advance and useful material parameters. Furthermore, the method suggests that the parameter match on Shockley's equation parameters, Rs, nideal, and Is, is a potential method to reduce the current crowding effect for the EIB LED. Junction temperature decreases by approximately 3 K to 10 K can be achieved by substrate thinning, ITO, and wire bonding. The nonlinear-decreasing characteristics of total thermal resistance that decrease with an increase in chip numbers are likely to improve the thermal performance of EIB LED modules.

Download Full-text