scholarly journals Experimental realization of an optical digital comparator using silicon microring resonators

Nanophotonics ◽  
2018 ◽  
Vol 7 (3) ◽  
pp. 669-675 ◽  
Author(s):  
Yonghui Tian ◽  
Huifu Xiao ◽  
Xiaosuo Wu ◽  
Zilong Liu ◽  
Yinghao Meng ◽  
...  
Keyword(s):  
Electrical Signal ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Microring Resonators ◽  
Digital Signals ◽  
Experimental Realization ◽  
Electrical Signals ◽  
Operation Speed ◽  
Digital Comparator ◽  
Comparison Results

AbstractWe propose and experimentally demonstrate a silicon photonic circuit that can perform the comparison operation of two-bit digital signals based on microring resonators (MRRs). Two binary electrical signals regarded as two operands of desired comparison digital signals are applied to three MRRs to modulate their resonances through the microheaters fabricated on the top of MRRs, respectively (here, one binary electrical signal is applied to two MRRs by a 1×2 electrical power splitter, which means that the two MRRs are modulated by the same binary electrical signal). The comparison results of two binary electrical signals can be obtained at two output ports in the form of light. The proposed device is fabricated on a silicon-on-insulator substrate using the complementary metal-oxide-semiconductor fabrication process, and the dynamic characterization of the device with the operation speed of 10 kbps is demonstrated successfully.

scholarly journals Monolithic optoelectronic integrated broadband optical receiver with graphene photodetectors

Nanophotonics ◽  
2017 ◽  
Vol 6 (6) ◽  
pp. 1343-1352 ◽  
Author(s):  
Chuantong Cheng ◽  
Beiju Huang ◽  
Xurui Mao ◽  
Zanyun Zhang ◽  
Zan Zhang ◽  
...  
Keyword(s):  
Integrated Circuit ◽  
Low Cost ◽  
Three Dimensional ◽  
Complementary Metal Oxide Semiconductor ◽  
Optical Signal ◽  
Optical Interconnect ◽  
Optical Receiver ◽  
Oxide Semiconductor ◽  
Experimental Realization ◽  
Operation Speed

AbstractOptical receivers with potentially high operation bandwidth and low cost have received considerable interest due to rapidly growing data traffic and potential Tb/s optical interconnect requirements. Experimental realization of 65 GHz optical signal detection and 262 GHz intrinsic operation speed reveals the significance role of graphene photodetectors (PDs) in optical interconnect domains. In this work, a novel complementary metal oxide semiconductor post-backend process has been developed for integrating graphene PDs onto silicon integrated circuit chips. A prototype monolithic optoelectronic integrated optical receiver has been successfully demonstrated for the first time. Moreover, this is a firstly reported broadband optical receiver benefiting from natural broadband light absorption features of graphene material. This work is a perfect exhibition of the concept of monolithic optoelectronic integration and will pave way to monolithically integrated graphene optoelectronic devices with silicon ICs for three-dimensional optoelectronic integrated circuit chips.

scholarly journals Experimental realization of a CMOS-compatible optical directed priority encoder using cascaded micro-ring resonators

Nanophotonics ◽  
2018 ◽  
Vol 7 (4) ◽  
pp. 727-733 ◽  
Author(s):  
Huifu Xiao ◽  
Dezhao Li ◽  
Zilong Liu ◽  
Xu Han ◽  
Wenping Chen ◽  
...  
Keyword(s):  
Monochromatic Light ◽  
Optical Signal ◽  
Electrical Signal ◽  
Optical Switches ◽  
Ring Resonators ◽  
Modulation Scheme ◽  
Logical Function ◽  
Experimental Realization ◽  
Operation Speed ◽  
Integrated Optical

AbstractIn this paper, we propose and experimentally demonstrate an integrated optical device that can implement the logical function of priority encoding from a 4-bit electrical signal to a 2-bit optical signal. For the proof of concept, the thermo-optic modulation scheme is adopted to tune each micro-ring resonator (MRR). A monochromatic light with the working wavelength is coupled into the input port of the device through a lensed fiber, and the four input electrical logic signals regarded as pending encode signals are applied to the micro-heaters above four MRRs to control the working states of the optical switches. The encoding results are directed to the output ports in the form of light. At last, the logical function of priority encoding with an operation speed of 10 Kbps is demonstrated successfully.

scholarly journals On-chip optical parity checker using silicon photonic integrated circuits

Nanophotonics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 1939-1948 ◽  
Author(s):  
Zilong Liu ◽  
Xiaosuo Wu ◽  
Huifu Xiao ◽  
Xu Han ◽  
Wenping Chen ◽  
...  
Keyword(s):  
Error Detection ◽  
High Speed ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Ring Resonators ◽  
Cmos Process ◽  
Operation Speed ◽  
Parity Checker ◽  
Silicon Photonic ◽  
Error Detection And Correction

AbstractThe optical parity checker plays an important role in error detection and correction for high-speed, large-capacity, complex digital optical communication networks, which can be employed to detect and correct the error bits by using a specific coding theory such as introducing error-detecting and correcting codes in communication channels. In this paper, we report an integrated silicon photonic circuit that is capable of implementing the parity checking for binary string with an arbitrary number of bits. The proposed parity checker consisting of parallel cascaded N micro-ring resonators (MRRs) is based on directed logic scheme, which means that the operands applied to MRRs to control the switching states of the MRRs are electrical signals, the operation signals are optical signals, and the final operation results are obtained at the output ports in the form of light. A 3-bit parity checker with an operation speed of 10 kbps, fabricated on a silicon-on-insulator (SOI) platform using a standard commercial complementary metal-oxide-semiconductor (CMOS) process, was experimentally and successfully demonstrated.

Single-Photon Detector Based on MOSFET Electrometer with Single-Electron Sensitivity

2011 ◽  
Vol 222 ◽  
pp. 3-7 ◽  
Author(s):  
Hiroshi Inokawa ◽  
Wei Du ◽  
Mitsuru Kawai ◽  
Hiroaki Satoh ◽  
Atsushi Ono ◽  
...  
Keyword(s):  
Low Voltage ◽  
Single Photon ◽  
Silicon On Insulator ◽  
Single Electron ◽  
Oxide Semiconductor ◽  
Single Photon Detection ◽  
Photon Detector ◽  
Single Photon Detector ◽  
Low Voltage Operation ◽  
Operation Speed

A unique single-photon detector is reported, which utilizes scaled-down silicon-on- insulator (SOI) metal-oxide-semiconductor field-effect transistor (MOSFET) with single-electron sensitivity, and features low-voltage operation without carrier multiplication and low dark counts. Primary single-photon detection characteristics are presented, and then several issues related to operation speed and quantum efficiency are to be addressed.

scholarly journals CMOS based Power Efficient Digital Comparator with Parallel Prefix Tree Structure

2018 ◽  
Vol 7 (2.7) ◽  
pp. 647
Author(s):  
J Lakshmi Prasanna ◽  
V Sahiti ◽  
E Raghuveera ◽  
M Ravi Kumar
Keyword(s):  
Complementary Metal Oxide Semiconductor ◽  
Logic Gates ◽  
Tree Structure ◽  
Oxide Semiconductor ◽  
Least Significant Bit ◽  
Power Efficient ◽  
Prefix Tree ◽  
Digital Comparator ◽  
Parallel Prefix ◽  
Transmission Gates

A 128-Bit Digital Comparator is designed with Digital Complementary Metal Oxide Semiconductor (CMOS) logic, with the use of Parallel Prefix Tree Structure [1] technique. The comparison is performed on Most Significant Bit (MSB) to the Least Significant Bit (LSB). The comparison for the lower order bits carried out only when the MSBs are equal. This technique results in Optimized Power consumption and improved speed of operation. To make the circuit regular, the design is made using only CMOS logic gates. Transmission gates were used in the existing design and are replaced with the simple AND gates. This 128-Bit comparator is designed using Cadence TSMC 0.18µm technology and optimized the Power dissipation to 0.28mW and with a Delay of 0.87μs. 

A highly sensitive broadband planar metal-oxide-semiconductor photo detector fabricated on a silicon-on-insulator substrate

2014 ◽  
Vol 116 (7) ◽  
pp. 074513 ◽  
Author(s):  
V. Mikhelashvili ◽  
D. Cristea ◽  
B. Meyler ◽  
S. Yofis ◽  
Y. Shneider ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Highly Sensitive ◽  
Insulator Substrate
Sign in / Sign up

Export Citation Format

Share Document