Electrochemical self-assembly of Cu/Cu2O nanowires

2002 ◽  
Vol 17 (2) ◽  
pp. 401-406 ◽  
Author(s):  
S. Kenane ◽  
L. Piraux
Keyword(s):  
Current Density ◽  
Cuprous Oxide ◽  
Self Assembly ◽  
Electrical Transport ◽  
Electrode Potential ◽  
Polymer Membranes ◽  
Applied Current ◽  
Cathodic Current ◽  
Applied Current Density ◽  
Pure Cu

Arrays of Cu/Cu2O nanowires were grown by electrodeposition in the nanopores of track-etched polymer membranes. If an appropriate solution is used, the electrode potential spontaneously oscillates during the application of a constant cathodic current. Both the period of the oscillations and the composition of the nanowires can be controlled by varying the applied current density. A nanocomposite of copper and cuprous oxide is deposited at an applied current over which oscillations occur. In contrast, pure Cu or Cu2O nanowires are obtained at a deposition current out of the range of oscillation. Electrical transport measurements were also performed on these nanowires.

Electrochemical Self-Assembled of Copper/Copper Oxide Nanowires

2001 ◽  
Vol 707 ◽  
Author(s):  
S. Kenane ◽  
L. Piraux
Keyword(s):  
Cuprous Oxide ◽  
Electrode Potential ◽  
Room Temperature ◽  
Polymer Membranes ◽  
Alkaline Solutions ◽  
Applied Current ◽  
Cathodic Current ◽  
Oxide Nanowires ◽  
Applied Current Density ◽  
Pure Cu

ABSTRACTArrays of Cu/Cu 2 O nanowires are electrodeposited at room temperature from alkaline solutions of copper lactate in the nanopores of track-etched polymer membranes. Using the appropriate solution, the electrode potential spontaneously oscillates during the application of a constant cathodic current. Both the period of the oscillations and the composition of the nanowires can be controlled by varying the applied current density. A nanocomposite of copper and cuprous oxide is deposited at an applied current over which oscillations occur. In contrast, pure Cu or Cu 2O nanowires are obtained at deposition current out of the range of oscillation.

scholarly journals Methiocarb Degradation by Electro-Fenton: Ecotoxicological Evaluation

Molecules ◽  
2020 ◽  
Vol 25 (24) ◽  
pp. 5893
Author(s):  
Faléstine Souiad ◽  
Ana Sofia Rodrigues ◽  
Ana Lopes ◽  
Lurdes Ciríaco ◽  
Maria José Pacheco ◽  
...  
Keyword(s):  
Current Density ◽  
Iron Concentration ◽  
Model Organism ◽  
Anodic Current Density ◽  
Applied Current ◽  
Boron Doped Diamond ◽  
Applied Current Density ◽  
Toxic Units ◽  
Boron Doped ◽  
Ecotoxicological Evaluation

This paper studies the degradation of methiocarb, a highly hazardous pesticide found in waters and wastewaters, through an electro-Fenton process, using a boron-doped diamond anode and a carbon felt cathode; and evaluates its potential to reduce toxicity towards the model organism Daphnia magna. The influence of applied current density and type and concentration of added iron source, Fe2(SO4)3·5H2O or FeCl3·6H2O, is assessed in the degradation experiments of methiocarb aqueous solutions. The experimental results show that electro-Fenton can be successfully used to degrade methiocarb and to reduce its high toxicity towards D. magna. Total methiocarb removal is achieved at the applied electric charge of 90 C, and a 450× reduction in the acute toxicity towards D. magna, on average, from approximately 900 toxic units to 2 toxic units, is observed at the end of the experiments. No significant differences are found between the two iron sources studied. At the lowest applied anodic current density, 12.5 A m−2, an increase in iron concentration led to lower methiocarb removal rates, but the opposite is found at the highest applied current densities. The highest organic carbon removal is obtained at the lowest applied current density and added iron concentration.

Electrodeposition of Polyhedral Copper Crystals on Porous Silicon

2011 ◽  
Vol 181-182 ◽  
pp. 434-438
Author(s):  
Ming Meng ◽  
Yuan Ming Huang
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Copper Chloride ◽  
Applied Current ◽  
Sem Images ◽  
Copper Crystal ◽  
Applied Current Density ◽  
Current Density Range ◽  
Tentative Explanation ◽  
Copper Crystals

Electrochemical deposition of copper from copper chloride aqueous electrolyte on porous silicon (PS) substrate was investigated in the current density range of 5 mA/cm2to 35 mA/cm2. Scanning electron microscopy (SEM) was utilized to characterize the surface morphology of as-electrodeposited PS. SEM images illustrate that the applied current density has a profound influence on the shape of copper crystal electrodeposited on the top surface of PS films. When the applied current density was fixed at 5mA/cm2, most of the copper crystals are in the shape of cube along with a small number of cuboid-shape. With the increasing current density, cuboid-shaped copper crystals gradually vanished. When the current density is up to the 35mA/cm2, we surprisingly observe that the cube shape predominates simultaneously with the emergence of truncated tetrahedron. A tentative explanation for the growth mechanism of copper crystal having various shapes is explored.

Investigation on the conductivity-dependent performance in low voltage cathodoluminescence

2015 ◽  
Vol 17 (15) ◽  
pp. 9936-9941 ◽  
Author(s):  
Chunyu Shang ◽  
Jinxian Zhao ◽  
Xiuqin Wang ◽  
Hongyang Xia ◽  
Hui Kang
Keyword(s):  
Current Density ◽  
Low Voltage ◽  
Generation Rate ◽  
Applied Current ◽  
Electron Hole ◽  
Phosphor Layer ◽  
Applied Current Density ◽  
Hole Generation

With the increase of applied current density in low voltage cathodoluminescence, the exciting power tends to saturate, causing the saturation of electron–hole generation rate in the phosphor layer.

Study of Forward Voltage Drift in Diffused SiC PiN Diodes Doped by Al or B

2005 ◽  
Vol 483-485 ◽  
pp. 989-992 ◽  
Author(s):  
S.I. Maximenko ◽  
Stanislav I. Soloviev ◽  
A.E. Grekov ◽  
A.V. Bolotnikov ◽  
Ying Gao ◽  
...  
Keyword(s):  
Current Density ◽  
Room Temperature ◽  
Stacking Faults ◽  
Applied Current ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Applied Current Density ◽  
Voltage Drift ◽  
Significant Change ◽  
Degradation Testing

The degradation of diffused SiC PIN diodes during forward-biased operation was studied by first fabricating PIN diodes by diffusion of aluminum or boron into 4H-SiC substrates with n-type 10-15 µm thick epilayers doped by nitrogen up to 5x1015cm-3. The formed diodes were subjected to degradation testing under an applied current density of 200A/cm2 at room temperature. The majority of the Al diffused diodes demonstrated a voltage drift, ΔVf, of more than 2 V, while B-doped diodes showed no significant change in forward voltage. The EBIC mode of SEM was employed to monitor nucleation and expansion of stacking faults.

scholarly journals Dynamics of chiral solitons driven by polarized currents in monoaxial helimagnets

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Victor Laliena ◽  
Sebastian Bustingorry ◽  
Javier Campo
Keyword(s):  
Current Density ◽  
Steady Motion ◽  
Spin Transfer Torque ◽  
Spin Transfer ◽  
Applied Current ◽  
Applied Current Density ◽  
Magnetic Structures ◽  
And Control ◽  
Moriya Interaction ◽  
Chiral Solitons

AbstractChiral solitons are one dimensional localized magnetic structures that are metastable in some ferromagnetic systems with Dzyaloshinskii–Moriya interactions and/or uniaxial magnetic anisotropy. Though topological textures in general provide a very interesting playground for new spintronics phenomena, how to properly create and control single chiral solitons is still unclear. We show here that chiral solitons in monoaxial helimagnets, characterized by a uniaxial Dzyaloshinskii–Moriya interaction, can be stabilized with external magnetic fields. Once created, the soliton moves steadily in response to a polarized electric current, provided the induced spin-transfer torque has a dissipative (nonadiabatic) component. The structure of the soliton depends on the applied current density in such a way that steady motion exists only if the applied current density is lower than a critical value, beyond which the soliton is no longer stable.

Sign in / Sign up

Export Citation Format

Share Document