MW plasma enhanced CVD of intrinsic Si for thin film solar cells

2008 ◽  
Vol 1066 ◽  
Author(s):  
Bas B. Van Aken ◽  
Hans Leegwater ◽  
Maarten Dorenkamper ◽  
Camile Devilee ◽  
Jochen Loffler ◽  
...  
Keyword(s):  
Thin Film ◽  
High Efficiency ◽  
Chemical Vapour ◽  
High Rate ◽  
Large Area ◽  
Roll To Roll ◽  
Silicon Photovoltaics ◽  
Roll System ◽  
P Type ◽  
Continuous Deposition

ABSTRACTOur aim is the development of high-throughput production technology for high efficiency, amorphous and microcrystalline thin film silicon photovoltaics (PV) on flexible substrates. A roll-to-roll system is developed, with three deposition chambers for the continuous deposition of n-type, intrinsic and p-type Si. Novel MW sources for plasma enhanced chemical vapour deposition (PECVD) are introduced in the roll-to-roll coater as MW-PECVD combines good quality with large area, high rate deposition of intrinsic Si. A comparison is made between Raman and UV-reflection spectroscopy.

Development of high efficiency large area silicon thin film modules using VHF-PECVD

Solar Energy ◽  
2004 ◽  
Vol 77 (6) ◽  
pp. 951-960 ◽  
Author(s):  
Hiromu Takatsuka ◽  
Matsuhei Noda ◽  
Yoshimichi Yonekura ◽  
Yoshiaki Takeuchi ◽  
Yasuhiro Yamauchi
Keyword(s):  
Thin Film ◽  
High Efficiency ◽  
Large Area ◽  
Silicon Thin Film

TFT Performance - Material Quality Correlation for a-Si:H Deposited at high Rates

1995 ◽  
Vol 377 ◽  
Author(s):  
S. Sherman ◽  
P-Y. Lu ◽  
R. A. Gottscho ◽  
S. Wagner
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Urbach Energy ◽  
Defect Density ◽  
High Rate ◽  
Linear Regime ◽  
Large Area ◽  
Film Properties ◽  
Deposition Power

ABSTRACTWe evaluated the characteristics of a-Si:H/a-SiNx:H thin film transistors (TFTs), and of separately deposited a-Si:H films, as functions of the a-Si:H deposition power in a high-rate, large-area, 40 MHz PE-CVD system. TFT performance and a-Si:H film properties improve with decreasing power density and deposition rate. However, low defect density a-Si:H material was deposited at rates as high as 1500 Å/min. TFTs with gate nitride deposited at 1000 A/min show excellent I-V characteristics when the a-Si:H deposition power is low enough. The TFT electron mobility in the linear regime correlates well with the Urbach energy of the a-Si:H films, suggesting that the quality of the a-Si: H controls the performance of our TFTs.

CdTe Thin-Film Solar Cells

MRS Bulletin ◽  
1993 ◽  
Vol 18 (10) ◽  
pp. 45-47 ◽  
Author(s):  
T. Suntola
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Cadmium Telluride ◽  
High Efficiency ◽  
Low Cost ◽  
Thick Layer ◽  
Thin Film Solar Cells ◽  
Cdte Thin Film ◽  
Large Area ◽  
Cell Structures

Cadmium telluride is currently the most promising material for high efficiency, low-cost thin-film solar cells. Cadmium telluride is a compound semiconductor with an ideal 1.45 eV bandgap for direct light-to-electricity conversion. The light absorption coefficient of CdTe is high enough to make a one-micrometer-thick layer of material absorb over 99% of the visible light. Processing homogenous polycrystalline thin films seems to be less critical for CdTe than for many other compound semiconductors. The best small-area CdTe thin-film cells manufactured show more than 15% conversion efficiency. Large-area modules with aperture efficiencies in excess of 10% have also been demonstrated. The long-term stability of CdTe solar cell structures is not known in detail or in the necessary time span. Indication of good stability has been demonstrated. One of the concerns about CdTe solar cells is the presence of cadmium which is an environmentally hazardous material.

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