Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

1988 ◽  
Vol 119 ◽  
Author(s):  
Hung-Yu Liu ◽  
Peng-Heng Chang ◽  
Jim Bohlman ◽  
Hun-Lian Tsai
Keyword(s):  
Thin Film ◽  
Film System ◽  
X Ray Diffraction ◽  
Compound Formation ◽  
X Ray ◽  
Thin Film System ◽  
Glancing Angle ◽  
Integrated Intensity ◽  
Al Thin Film ◽  
Kinetics Of

AbstractThe interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Phase Formation and Phase Stability in the Al-Ti Thin Film System

1990 ◽  
Vol 213 ◽  
Author(s):  
L.R. Parks ◽  
D.A. Lilienfeld ◽  
P. BØRgesen ◽  
R. Raj
Keyword(s):  
Thin Film ◽  
Phase Stability ◽  
Rutherford Backscattering Spectrometry ◽  
Intermetallic Phases ◽  
Film System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Annealing Temperatures ◽  
Thin Film System ◽  
Sequential Formation

ABSTRACTThis study focuses on the sequential formation of aluminide phases during annealing of titanium and aluminum thin film bilayers. The formation of titanium-rich intermetallic phases at higher annealing temperatures is emphasized. Using Rutherford Backscattering Spectrometry (RBS) analysis, and x-ray diffraction, phases formed as a function of temperature have been identified. The phases Al3Ti through Ti3Al were observed over the temperature range 450–750°C, where reaction with the SiO2 substrate occurred. All phases were present as discreet layers within the samples with several layered phases coexisting at the higher temperatures.

Formation of New Interfacial Phases in Bimetallic Thin Film Couples Studied by in Situ Annealing X-ray Diffraction

1985 ◽  
Vol 54 ◽  
Author(s):  
J. M. Vandenberg
Keyword(s):  
Thin Film ◽  
Interface Reaction ◽  
Magnetic Alloy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Metal Metal ◽  
Glancing Angle ◽  
Al Thin Film ◽  
New Phase

ABSTRACTInterfacial reactions in bimetallic thin films have been studied by in-situ glancing angle X-ray diffraction which enables us to monitor all stages of the interface reaction in the temperature range 35 °-950° C Results are presented on new phase formation in evaporated Ag-Al and Cu-Al thin film couples, sputtered bimetallic Nb-Sn and Nb-Pb films and magnetic alloy films. New phases as well as phase transitions which are not known to exist in the bulk phase diagrams, were observed. These results provided evidence that phases other than those predicted by the first nucleation rule, grow during the initial metal-metal thin film interface reaction.

Silicidation in Ni/Si thin film system investigated by X-ray diffraction and Auger electron spectroscopy

2007 ◽  
Vol 253 (8) ◽  
pp. 3799-3802 ◽  
Author(s):  
S. Abhaya ◽  
G. Amarendra ◽  
S. Kalavathi ◽  
Padma Gopalan ◽  
M. Kamruddin ◽  
...  
Keyword(s):  
Thin Film ◽  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Film System ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thin Film System ◽  
Si Thin Film

Structural and Concentration Heterogeneities during Formation of Silicide Phases in the Thin Film System Ti(5nm)/Ni(24nm)/Si(001)

2013 ◽  
Vol 344 ◽  
pp. 79-84
Author(s):  
S.I. Sidorenko ◽  
S.M. Voloshko ◽  
Yu.M. Мakogon ◽  
O.P. Pavlov ◽  
I.E. Kotenko ◽  
...  
Keyword(s):  
Thin Film ◽  
Mass Spectrometry ◽  
Solid State ◽  
Auger Spectroscopy ◽  
Solid State Reactions ◽  
Layer By Layer ◽  
Film System ◽  
X Ray ◽  
Thin Film System ◽  
Secondary Ions

By the methods of Auger-spectroscopy and mass-spectrometry of secondary ions, small-angle electron diffraction, X-ray and resistometry analyses the solid-state reactions in the Ti(5 nm)/ Ni(24 nm)/Si(001) thin film system at annealing in running nitrogen in the temperature interval of 723 – 1273 К are investigated. Regularities of phase transformations, consistency of solid-state reactions, layer-by-layer redistribution of components during annealing, features of surface morphology during formation of inclusions of silicide phases are established.

Glancing Angle X-Ray Study of Crystallization of Amorphous Ge at the Ge-A1 Interface

1990 ◽  
Vol 202 ◽  
Author(s):  
S. M. Heald ◽  
J. K. D. Jayanetti ◽  
R. C. Budhani
Keyword(s):  
Initial Period ◽  
Time Characteristic ◽  
X Ray Diffraction ◽  
X Ray ◽  
Diffusion Limited ◽  
Glancing Angle ◽  
Lower Temperature ◽  
Kinetics Of ◽  
Diffusion Limited Reaction ◽  
Good Agreement

ABSTRACTThe amorphous to crystalline transformation of Ge in Al/Ge thin film couples has been studied using glancing angle EXAFS, x-ray reflectivity and diffraction. It was found that crystallization occurs at a much lower temperature (118-150 °C) than for bulk Ge, and initiates at the Al/Ge interface. X-ray diffraction studies were made at 152 °C to study the kinetics of the reaction. After an initial period we find good agreement with a square root dependence of the time, characteristic of a diffusion limited reaction.

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