Gas Phase and Surface Reactions of Organometallic Arsenic Sources

1989 ◽  
Vol 145 ◽  
Author(s):  
T.R. Omstead ◽  
S. Brandon ◽  
M. Hoveland ◽  
K.F. Jensen ◽  
D.A. Bohling ◽  
...  

AbstractThe chemical kinetics of two new organometallic arsenic substitutes, tris-trifluoromethylarsenic (As(CF3)3) and phenylarsine (PhAsH2), for use in the MOCVD of GaAs have been characterized through the use of microbalance gravimetry and molecular beam mass spectrometry. Both growth rate and gas-phase cracking studies demonstrate that phenylarsine interacts only slightly with the common gallium precursors, which may make it a useful alternative to arsine. Growth with tris-trifluoromethylarsenic is achieved only at low V/III ratios and with pressures above 250 Torr. The compound etches GaAs under most conditions.

2018 ◽  
Vol 20 (16) ◽  
pp. 10780-10795 ◽  
Author(s):  
Lena Ruwe ◽  
Kai Moshammer ◽  
Nils Hansen ◽  
Katharina Kohse-Höinghaus

Flame-sampling molecular beam mass spectrometry enables valuable insights into the fuel-structure-dependent formation kinetics of polycyclic aromatic hydrocarbons and their precursors.


1999 ◽  
Vol 606 ◽  
Author(s):  
Carmela C. Amato-Wierda ◽  
Edward T. Norton ◽  
Derk A. Wierda

AbstractTetrakis(dimethylamino)titanium (TDMAT) is an important precursor for TiN, TiCN, and TiSiN thin films in chemical vapor deposition. In order to better understand how the gas phase chemistry influences the formation of these films, the decomposition of TDMAT has been studied in a high-temperature flow reactor (HTFR) by molecular beam mass spectrometry (MBMS). Two kinetic regimes have been observed as a function of temperature. Rate expressions and mechanistic implications will be presented. Further studies are in progress to identify the gas phase species relevant to the decomposition mechanism of TDMAT.


Sign in / Sign up

Export Citation Format

Share Document