High Temperature Implantation in Graphite

1983 ◽  
Vol 27 ◽  
Author(s):  
G. Braunstein ◽  
B.S. Elman ◽  
M.S. Dresselhaus ◽  
G. Dresselhaus ◽  
T. Venkatesan

ABSTRACTIn previous studies it was found that when highly oriented pyrolytic graphite (HOPG) is implanted at room temperature, the damage caused by the implantation could be completely annealed by heating the sample to temperatures higher than ∼ 2500°C. However at these high temperatures, the implanted species was found to diffuse out of the sample, as evidenced by the disappearance of the impurity peak in the Rutherford backscattering (RBS) spectrum. If, on the other hand, the HOPG crystal was held at a high temperature (≥ 600°C) during the implantation, partial annealing could be observed. The present work further shows that it is possible to anneal the radiation damage and simultaneously to retain the implants in the graphite lattice by means of high temperature implantation (Ti ≥ 450°C) followed by annealing at 2300°C.

2012 ◽  
Vol 9 (1) ◽  
pp. 169-171
Author(s):  
Ram Oruganti

When a material is subjected to temperature and stress, it deforms slowly resulting in permanent shape change. If the same amount of stress were applied at room temperature, the material would not budge. This deformation at high temperature under low stresses is called creep. This phenomenon is important for OEM’S like GE etc. since turbine components are exposed to low stress and high temperature and the resulting shape change is not a desirable consequence. Apart from the change in shape, the components can eventually rupture leading to catastrophic consequences. So it is imperative that the nature of this phenomenon is understood well. Some of the questions to be answered are 1) What makes one material more resistant to creep that the other 2) How can a material’s creep resistance be improved 3) How can the current creep damage in a component be measured 4) Is it possible to say what fraction of the total life of a component has been consumed by creep.


2014 ◽  
Vol 778-780 ◽  
pp. 903-906 ◽  
Author(s):  
Kevin Matocha ◽  
Kiran Chatty ◽  
Sujit Banerjee ◽  
Larry B. Rowland

We report a 1700V, 5.5mΩ-cm24H-SiC DMOSFET capable of 225°C operation. The specific on-resistance of the DMOSFET designed for 1200V applications is 8.8mΩ-cm2at 225°C, an increase of only 60% compared to the room temperature value. The low specific on-resistance at high temperatures enables a smaller die size for high temperature operation. Under a negative gate bias temperature stress (BTS) at VGS=-15 V at 225°C for 20 minutes, the devices show a threshold voltage shift of ΔVTH=-0.25 V demonstrating one of the key device reliability requirements for high temperature operation.


1982 ◽  
Vol 75 (1) ◽  
pp. 53-55
Author(s):  
George Knill ◽  
George Fawceti

Everyone knows that wood bums at a very high temperature. This burning is a chemical process that combines oxygen and carbon. The process occurs at very low temperatures as well as at very high ones. At high temperatures the process is spectacular-fire. At low temperatures (room temperature) you won’t even notice it, although it is still going on. Wood is always burning.


1957 ◽  
Vol 35 (10) ◽  
pp. 1205-1215 ◽  
Author(s):  
R. D. Heyding ◽  
L. D. Calvert

Alloys of nickel and arsenic containing up to 60% As by weight have been studied by means of room temperature and high temperature Debye-Scherrer diagrams. Three compounds have been identified: Ni5As2, Ni12−xAs8 (maucherite), and NiAs (niccolite). The first of these is homogeneous from Ni5As2 to Ni4.8A2 at room temperature, and to Ni4.6As2 above 250 °C., while the latter is homogeneous from NiAs to Ni0.95As. Contrary to expectations the stability region of the compound Ni12−xAs8 is very narrow, and occurs at Ni11As8 rather than at Ni3As2. Evidence is presented in support of Hansen's contention that this compound has an incongruent melting point. Alloys in the region corresponding to Ni4.6As2 undergo two transitions below 200 °C, one of which is martensitic and produces a metastable phase, while the other is believed to result in the formation of a new compound, as yet unidentified. The diffraction patterns are discussed in some detail.


2016 ◽  
Vol 4 (4) ◽  
pp. 780-792 ◽  
Author(s):  
Smita Chaturvedi ◽  
Rabindranath Bag ◽  
Vasant Sathe ◽  
Sulabha Kulkarni ◽  
Surjeet Singh

Ho-doped sample simultaneously exhibits high-coercivity and enhanced remnant magnetization with a polar R3c symmetry at room temperature. The onset of R3c to Pnma phase transition is observed at high temperatures in the Ho-doped samples.


1994 ◽  
Vol 48 (11) ◽  
pp. 1442-1450 ◽  
Author(s):  
Patrick J. Medvecz ◽  
Kenneth M. Nichols

Fourier transform infrared absorption spectroscopy has been used for the determination of the line strengths of 41 CO and CO2 absorption lines at temperatures between 295 and 1250 K. The CO vibrational-rotational lines were from the P branch of the fundamental absorption band (2150–1950 cm−1) while the CO2 vibrational-rotational lines were from the far wing of the R branch of the v3 fundamental band (2395–2380 cm−1). The intensities of the lines were measured from absorption spectra recorded in a high-temperature gas cell containing known concentrations of CO/CO2/N2 gas mixtures at atmospheric pressure. Absorption spectra were recorded through the cell with the use of a moderate-resolution Fourier transform infrared spectrometer. The absorption spectra were mathematically corrected for distortions resulting from the finite resolution of the spectrometer and for peak overlap. Line strength measurements were made from the corrected peaks by using the Bouguer-Lambert law and assuming a Lorenztian line profile. The experimentally obtained line strengths were evaluated (1) by statistical calculations, (2) by consideration of the validity of the Bouguer-Lambert assumption for these data, (3) by comparison with existing room-temperature and high-temperature data, and (4) by comparison with theoretical calculations. For CO, the statistical analysis suggests that the reported values have an uncertainty of ±10–12%, which is similar to the observed discrepancies with other reported values at room temperature. At high temperatures, the difference between these data and previously reported data and theoretical predictions is less than 10%. For CO2, the statistical uncertainty associated with the line strength calculations is less than 5%, which is also the approximate level of agreement with existing room-temperature data. For lines with m indicies of 65–89, at high temperatures, the values reported in this work agree within 5 to 10% of theoretical calculations.


Crystals ◽  
2019 ◽  
Vol 9 (7) ◽  
pp. 350
Author(s):  
Andrey K. Gatin ◽  
Maxim V. Grishin ◽  
Nadezhda V. Dokhlikova ◽  
Sergey Yu. Sarvadii ◽  
Boris R. Shub

The features of deuterium adsorption on the surface of gold nanoparticles deposited on highly oriented pyrolytic graphite (HOPG) were determined. The results showed that deuterium adsorption on gold nanoparticles takes place at room temperature. The results also showed that the filling of the nanoparticles’ surfaces with the adsorbate occurs from the graphite–gold interface until the entire surface is covered by deuterium. The results of quantum chemical simulations are used to explain the experimental data. A simple model of the observed effects is proposed.


Author(s):  
E.A. Kenik ◽  
D.F. Pedraza ◽  
S.P. Withrow

Several grades of graphite are used in nuclear applications; as moderators in fission reactors, primary fuel containment in high temperature gas-cooled reactors, and plasma facing materials in fusion reactors. Whereas high temperature (<800°C) radiation damage response is reasonably well understood, the low temperature response is less well understood, including amorphization under irradiation. This study examined this response for ion-irradiated, highly-oriented pyrolytic graphite (HOPG). Electron transparent flakes of HOPG were prepared by repeated cleavage. Folding grids were used to hold the flakes during ion irradiation and electron microscopy. Specimens were irradiated with either 35 or 165 keV carbon or 300 keV xenon ions to fluences up to 1 × 1016 and 3×1015 ions/cm2, respectively, at nominal temperatures from room temperature to 600°C. The low energy carbon and xenon ions were selected to give similar ion ranges (∼84 nm). The range of the 165 keV carbon ions was 330 nm.


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