Residual Stresses Analysis in Diamond Layers Deposited on Various Substrates

1995 ◽  
Vol 383 ◽  
Author(s):  
D. Rats ◽  
L. Bimbault ◽  
L. Vandenbulcke ◽  
R. Herbin ◽  
K. F. Badawi
Keyword(s):  
Residual Stresses ◽  
Thermal Stresses ◽  
Film Growth ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Oxygen Gas ◽  
Deposition Conditions

ABSTRACTA major problem for diamond coating applications is that diamond films tend to exhibit poor adherence on many. substrates and typically disbond at thicknesses of the order of few micrometers due especially to residual stresses. Residual stresses in diamond are composed of thermal expansion mismatch stresses and intrinsic stresses induced during film growth. Diamond films were deposited in a classical microwave plasma reactor from hydrocarbon-hydrogen-oxygen gas mixtures. Thermal stresses were directly calculated from Hook's law. On silicon substrate, intrinsic stresses were deduced by difference from measurements of total stresses either by the curvature method or by X-ray diffraction using the sin 2ψ method. These investigations allow us to discuss the origin of the intrinsic stresses. The residual stress level was also investigated by Raman spectroscopy as a function of the deposition conditions and substrate materials (SiO2, Si3N4, Si, SiC, WC-Co, Mo and Ti-6A1-4V). We show that the thermal stresses are often preponderant.

Realization Of X-Ray Lithography Masks Based On Diamond Membranes

1993 ◽  
Vol 306 ◽  
Author(s):  
M. F. Ravet ◽  
A. Gicquel ◽  
E. Anger ◽  
Z. Z. Wang ◽  
Y. Chen ◽  
...  
Keyword(s):  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
Polycrystalline Diamond ◽  
Nucleation And Growth ◽  
Local Conditions ◽  
X Ray ◽  
Deposition Parameters ◽  
Deposition Conditions

AbstractDeposition parameters acting on nucleation and growth local conditions have been optimized in a bell jar microwave plasma reactor to obtain polycrystalline diamond thin films compatible with X-ray membrane requests. The microstructure and the chemical quality of the films were estimated by SEM and Raman spectroscopy respectively, the roughness was evaluated by AFM experiments and the residual stress was deduced from the substrate deflection method. Membranes were obtained by removing the silicon substrate on 15 mm diameter circular windows. The optical transparency depending on deposition conditions was optimized up to 65% at 630 nm for 1 μm thickness. A high resolution additive mask process, based on well taut membranes and low stress electroplated gold absorber, was carried out. Micrometric and submicrometric mask patterns were generated in photoresists both by electron beam lithography with a nanopattern generator and by X-ray lithography using the synchrotron radiation facility implemented at LURE-Orsay. Despite the diamond films roughness of the order of 30 nm, well defined dots and lines as narrow as 100–200 nm could be obtained.

Residual Stress Analysis of Microwave Plasma CVD Diamond Films

2005 ◽  
Vol 495-497 ◽  
pp. 1359-1364 ◽  
Author(s):  
Leng Chen ◽  
Wei Min Mao ◽  
Fan Xiu Lu ◽  
Ping Yang
Keyword(s):  
Residual Stress ◽  
Residual Stresses ◽  
Thermal Stresses ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
Orientation Distribution ◽  
X Ray ◽  
Plasma Chemical Vapor Deposition ◽  
Microwave Plasma Cvd

The residual stress and crystallographic texture of diamond films were investigated in the present work. The diamond films were synthesized on (100) silicon wafer by Microwave Plasma Chemical Vapor deposition (MPCVD). Then the residual stresses of the films were measured by X-ray diffractometer equipped with the two-dimensional detector. The residual stresses can be classified into two categories, i.e., the intrinsic stresses and the thermal stresses. It was shown that the thermal stresses were compressive in the temperature range studied and the intrinsic stresses were tensile. The crystallographic textures of the films were measured by X-ray diffractometer with the method of pole figure and orientation distribution function (ODF). The experimental results suggest that the crystallographic textures of the films depend upon the deposition temperature and methane flow rates, and the components and intensity of crystallographic textures have effect on the residual stresses in diamond films to a certain extent.

The Initial Stages of Plasma Synthesis of Diamond Films

1988 ◽  
Vol 129 ◽  
Author(s):  
R. Meilunas ◽  
M.S. Wong ◽  
K. Sheng ◽  
T.P. Ong ◽  
R.P.H. Chang
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Nucleation And Growth ◽  
Plasma Synthesis ◽  
X Ray Diffraction ◽  
Diamond Nucleation ◽  
X Ray ◽  
Deposition Parameters ◽  
Starting Conditions ◽  
Size And Morphology

ABSTRACTThe effects of plasma starting conditions on the initial stages of diamond nucleation and growth in a microwave plasma have been studied as a function of important deposition parameters. The influence of the substrate temperature on the diamond nucleation rate, quality, and final film morphology has been elucidated through various analytical measurements. The diamond films are characterized with Raman spectroscopy, X-ray diffraction, and scanning electron microscopy. Finally, methods are described for reproducibly controlling the grain size and morphology of the diamond films for tribological and abrasive applications.

X-Ray Diffraction Analysis of ZnO Particles Prepared by Microwave Plasma

2017 ◽  
Vol 751 ◽  
pp. 195-201
Author(s):  
Parinya Chakartnarodom ◽  
Nuntaporn Kongkajun ◽  
Wichit Prakaypan
Keyword(s):  
Microwave Plasma ◽  
Gas Mixture ◽  
Zinc Vapor ◽  
X Ray Diffraction ◽  
Synthesis Time ◽  
Conductive Material ◽  
X Ray ◽  
Lattice Constants ◽  
Zno Particles ◽  
Oxygen Gas

The aim of this work is to use x-ray diffraction (XRD) technique to analyze ZnO particles prepared by the reaction between the zinc vapor and oxygen within microwave plasma. The microwave plasma was created by the interaction between the 1200-W 2.45-GHz microwave, the conductive material, and the argon-oxygen gas mixture. Due to the high effective temperature of the plasma, it was thermodynamically and kinetically possible to generate zinc vapor from the solid zinc and then reacted with the oxygen in the gas mixture to form ZnO particles. The synthesis of ZnO in the microwave plasma has been done for 10 to 15 minutes. The XRD results show that the synthesized ZnO samples have wurtzite structure. Moreover, the increasing of synthesis time from 10 to 15 minutes affects the lattice constants, the crystallite size, and the magnitude of strain in ZnO crystals.

A Study of Stress in Microwave Plasma Chemical Vapor Deposited Diamond Films Using X-Ray Diffraction

1997 ◽  
Vol 3 (3) ◽  
pp. 129-135 ◽  
Author(s):  
M. Shahidul Haque ◽  
Hameed A. Naseem ◽  
Ajay P. Malshe ◽  
William D. Brown
Keyword(s):  
Microwave Plasma ◽  
Diamond Films ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Plasma Chemical ◽  
X Ray ◽  
Chemical Vapor Deposited

Stress and elastic-constant analysis by X-ray diffraction in thin films

2003 ◽  
Vol 36 (3) ◽  
pp. 869-879 ◽  
Author(s):  
F. Badawi ◽  
P. Villain
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stresses ◽  
Elastic Constants ◽  
Thermal Stresses ◽  
Bulk Material ◽  
Poisson Ratio ◽  
Young Modulus ◽  
X Ray Diffraction ◽  
X Ray

Residual stresses influence most physical properties of thin films and are closely related to their microstructure. Among the most widely used methods, X-ray diffraction is the only one allowing the determination of both the mechanical and microstructural state of each diffracting phase. Diffracting planes are used as a strain gauge to measure elastic strains in one or several directions of the diffraction vector. Important information on the thin-film microstructure may also be extracted from the width of the diffraction peaks: in particular, the deconvolution of these peaks allows values of coherently diffracting domain size and microdistortions to be obtained. The genesis of residual stresses in thin films results from multiple mechanisms. Stresses may be divided into three major types: epitaxic stresses, thermal stresses and intrinsic stresses. Diffraction methods require the knowledge of the thin-film elastic constants, which may differ from the bulk-material values as a result of the particular microstructure. Combining an X-ray diffractometer with a tensile tester, it is possible to determine X-ray elastic constants of each diffracting phase in a thin-film/substrate system, in particular the Poisson ratio and the Young modulus. It is important to notice that numerous difficulties relative to the application of diffraction methods may arise in the case of thin films.

Simulations of CVD Diamond Film Growth: 2D Models for the identities and concentrations of gas-phase species adsorbing on the surface

2011 ◽  
Vol 1282 ◽  
Author(s):  
Paul W. May ◽  
Yuri A. Mankelevich
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Microwave Plasma ◽  
Plasma Reactor ◽  
Diamond Films ◽  
Diamond Surface ◽  
Diamond Growth ◽  
Process Conditions ◽  
Ultrananocrystalline Diamond ◽  
Single Crystal Diamond

ABSTRACTA prerequisite for modelling the growth of diamond by CVD is knowledge of the identities and concentrations of the gas-phase species which impact upon the growing diamond surface. Two methods have been devised for the estimation of this information, and have been used to determine adsorption rates for CxHy hydrocarbons for process conditions that experimentally produce single-crystal diamond, microcrystalline diamond films, nanocrystalline diamond films and ultrananocrystalline diamond films. Both methods rely on adapting a previously developed model for the gas-phase chemistry occurring in a hot filament or microwave plasma reactor. Using these methods, the concentrations of most of the CxHy radical species, with the exception of CH3, at the surface have been found to be several orders of magnitude smaller than previously believed. In most cases these low concentrations suggest that reactions such as direct insertion of C1Hy (y = 0-2) and/or C2 into surface C–H or C–C bonds can be neglected and that such species do not contribute significantly to the diamond growth process in the reactors under study.

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