Characterizations of Ultra-thin Dielectrics Grown by Microwave Afterglow O2/N2O Plasma Oxidation at Low Temperature with Rapid Thermal Annealing

1995 ◽  
Vol 387 ◽  
Author(s):  
Po-ching Chen ◽  
Klaus Yung-jane Hsu ◽  
Joseph J. Loferski ◽  
Huey-liang Hwang
Keyword(s):  
Low Temperature ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Plasma Oxidation ◽  
X Ray ◽  
Thin Dielectrics

AbstractMicrowave afterglow plasma oxidation at a low temperature (600 °C ) and rapid thermal annealing (RTA) were combined to grow high quality ultra-thin dielectrics. This new approach has a low thermal budget. The mid-gap interface state density of oxides pretreated in N2O plasma was decreased to about 5×1010 cm−2eV−1 after rapid thermal annealing at 950 °C.It was found that RTA is very effective for relieving the oxide stress and reducing the interface state density. Nitrogen incorporated in oxides by the N2O plasma pretreatment of the Si surface helped to reduce the interface state density. Microstructures of ultra-thin oxide grown by microwave afterglow oxidation with or without RTA were revealed by extended-X-ray-absorption-finestructure (EXAFS) and X-ray photoelectron spectroscopy (XPS) analysis.

Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration

2010 ◽  
Vol 645-648 ◽  
pp. 503-506 ◽  
Author(s):  
Yoshinori Iwasaki ◽  
Hiroshi Yano ◽  
Tomoaki Hatayama ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Interface Properties ◽  
Dangling Bonds ◽  
X Ray ◽  
Plasma Pretreatment

We have investigated NH3 plasma pretreatment for Si- and C-face 4H-SiC and characterized interface properties and bond configuration. It is revealed that the NH3 plasma pretreatment is effective to reduce interface state density on C-face. From X-ray photoelectron spectroscopy (XPS) measurements, N- and H-related C bonds were observed. N and H passivate C-related defects and dangling bonds, resulting in improved interface properties.

The Impact of Rapid Thermal Annealing on the Properties of the Si (100)-SiO2 Interface

1998 ◽  
Vol 510 ◽  
Author(s):  
P.K. Hurley ◽  
C. Leveugle ◽  
A. Mathewson ◽  
D. Doyle ◽  
S. Whiston ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Energy Gap ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Density Profiles ◽  
Static Capacitance ◽  
Silicon Based ◽  
The Impact

AbstractIn this work, we present results and analysis which demonstrate the influence of rapid thermal annealing (RTA) on the properties of the Si(100)-SiO2 interface. Polysilicon/oxide/silicon capacitor structures were subjected to RTA treatments, in a nitrogen ambient, over the temperature range 600-1050°C. The structures were examined using high frequency and quasi-static capacitance-voltage (CV) analysis to determine the interface state density profile across the energy gap immediately following the RTA step. The effect of hydrogen annealing subsequent to the RTA process is also presented. Based on the analysis of the interface state density profiles, it is suggested in this work, that RTA (T > 600°C) exposes silicon dangling bond (Pb) centres at the Si(100)-SiO2 interface. The implications of this work to the study of the Si-SiO2 interface, and the technological implications for silicon based MOS processes, are discussed.

scholarly journals Investigate on the Mechanism of HfO2/Si0.7Ge0.3 Interface Passivation Based on Low-Temperature Ozone Oxidation and Si-Cap Methods

Nanomaterials ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 955
Author(s):  
Qide Yao ◽  
Xueli Ma ◽  
Hanxiang Wang ◽  
Yanrong Wang ◽  
Guilei Wang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Oxide Semiconductor ◽  
Direct Oxidation ◽  
Ozone Oxidation ◽  
X Ray ◽  
Interface Passivation ◽  
Metal Oxide Semiconductor Capacitor

The interface passivation of the HfO2/Si0.7Ge0.3 stack is systematically investigated based on low-temperature ozone oxidation and Si-cap methods. Compared with the Al2O3/Si0.7Ge0.3 stack, the dispersive feature and interface state density (Dit) of the HfO2/Si0.7Ge0.3 stack MOS (Metal-Oxide-Semiconductor) capacitor under ozone direct oxidation (pre-O sample) increases obviously. This is because the tiny amounts of GeOx in the formed interlayer (IL) oxide layer are more likely to diffuse into HfO2 and cause the HfO2/Si0.7Ge0.3 interface to deteriorate. Moreover, a post-HfO2-deposition (post-O) ozone indirect oxidation is proposed for the HfO2/Si0.7Ge0.3 stack; it is found that compared with pre-O sample, the Dit of the post-O sample decreases by about 50% due to less GeOx available in the IL layer. This is because the amount of oxygen atoms reaching the interface of HfO2/Si0.7Ge0.3 decreases and the thickness of IL in the post-O sample also decreases. To further reduce the Dit of the HfO2/Si0.7Ge0.3 interface, a Si-cap passivation with the optimal thickness of 1 nm is developed and an excellent HfO2/Si0.7Ge0.3 interface with Dit of 1.53 × 1011 eV−1cm−2 @ E−Ev = 0.36 eV is attained. After detailed analysis of the chemical structure of the HfO2/IL/Si-cap/Si0.7Ge0.3 using X-ray photoelectron spectroscopy (XPS), it is confirmed that the excellent HfO2/Si0.7Ge0.3 interface is realized by preventing the formation of Hf-silicate/Hf-germanate and Si oxide originating from the reaction between HfO2 and Si0.7Ge0.3 substrate.

Electronic passivation of GaP surfaces using (NH4)2S treatment

1992 ◽  
Vol 70 (10-11) ◽  
pp. 1050-1056 ◽  
Author(s):  
L. Jedral ◽  
H. E. Ruda ◽  
R. Sodhi ◽  
H. Ma ◽  
L. Mannik
Keyword(s):  
Surface Treatment ◽  
Photoelectron Spectroscopy ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
X Ray ◽  
Native Oxides ◽  
Treatment Changes ◽  
Time Changes ◽  
First Time

The influence of (NH4)2S treatment on the surface properties of GaP is presented for the first time. Changes in the chemical composition and Fermi level position are characterized using X-ray photoelectron spectroscopy. These measurements show that after surface treatment, the GaP surface is free of native oxides. A strong enhancement (~ 50 times) in the cathodoluminescent efficiency was observed for sulfur passivated samples. Schottky diode characteristics were used to reveal changes in the barrier height and interface state density due to surface treatment. Changes in carrier concentration were also found to be reflected in measured Raman spectra. The passivation mechanism is also briefly discussed.

Characterization of Rapid Nitrided Ultrathin SiO2 Films By XPS and SCS

1995 ◽  
Vol 387 ◽  
Author(s):  
H. Yan ◽  
S. P. Wong ◽  
R. W. M. Chan ◽  
R. W. M. Kwok ◽  
W. X. Feng
Keyword(s):  
Photoelectron Spectroscopy ◽  
Interface State ◽  
Dielectric Surface ◽  
State Density ◽  
Breakdown Field ◽  
Silicon Substrates ◽  
X Ray ◽  
Dielectric Layers ◽  
Breakdown Field Strength

AbstractUltrathin SiO2 dielectric layers of thickness less than 100Å on silicon substrates have been prepared by dry oxidation and rapid thermal nitirdation (RTN). In this study, X-ray photoelectron spectroscopy and surface charge spectroscopy had been applied to study the nitrogen distribution in the dielectric layers and the change in the interface state density (Dit) due to the nitrogen incorporation. It is found that most of the incorporated nitrogen is located near the dielectric/Si interface and the nitrogen content increases with the RTN temperature. For the electrical properties, we found that the Dit, after RTN slightly decreases and the breakdown field strength deduced from the dielectric surface potential was enhanced by the incorporation of nitrogen.

Effects of Rapid Thermal Annealing on SiNx Capped MBE GaAs

1992 ◽  
Vol 262 ◽  
Author(s):  
Akira Ito ◽  
Akira Usami ◽  
Hiroyuki Ueda ◽  
Hiroyuki Kano ◽  
Takao Wada
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Photoelectron Spectroscopy ◽  
Deep Level ◽  
Error Function ◽  
X Ray ◽  
Molecular Beam Epitaxial ◽  
Complementary Error Function ◽  
Cap Layer ◽  
Transient Spectroscopy

ABSTRACTEffects of rapid thermal annealing (RTA) with a SiNx encapsulant on molecular beam epitaxial GaAs are studied with deep level transient spectroscopy (DLTS) measurements and x-ray photoelectron spectroscopy (XPS) measurements. The RTA was performed at various temperatures form 800°C to 1100°C for 6sec. The electron trap EL2 is produced by the RTA above 850°C The EL2 depth profile produced after the RTA is fitted with a complementary error function. The SiNx cap layer is more effective to prevent the formation of the EL2 than the SiO* cap layer during the RTA, because the critical temperature of the SiNx cap where the EL2 concentration starts to increase is higher than that of the SiOx cap. Slight increase of the oxidized Ga atoms is observed after the RTA near the cap surface. The enhancement of the EL2 trap is discussed considering the outdiffusion of Ga atoms into the cap layer during the RTA.

Sign in / Sign up

Export Citation Format

Share Document